The reset mechanism in an amplified image sensor with a-Si : H photoconductive film is analyzed. The pixel elements in this device consist of three MOSFET's, used as an element-inherent amplifier, a Y-address switch and a reset switch for removing the integrated photocharges from the amplifier's gate.
Theoretical analysis and experimental results show that after the reset pulse is removed, the reset potential on the amplifier's gate is modified in four ways ; the device structure and operational conditions determine which way is dominant. The ligt-induced shift in the reset potential, which should resut in a large image lag, is found to be minimized by using an n-channel MOSFET as a reset switch and operating it in the linear region.
Additionally, a reset pulse with a fast fall time is shown to result in a large shift in the reset potential. This is usually accompanied by a larger reset noise.
To eliminate these problems, an optimal method for implementing the amplified image sensor is presented.
View full abstract