Journal of the Japanese Association for Crystal Growth

Some of the crystals, such as CdTe, GaP and ZnSe crystals with zincblende structure, contain rotation twins. They are classified into two types: one is rotated around the <111> growth direction and the other around one of the <111> directions other than growth direction. The existence of the rotation twins around the growth axis can be identified by the orientation of isosceles triangular etch pits developed either on the {011} cleavage plane or on the growth habit plane. The existence of the other twins was recognized by the etching behavior on {511} and {111} planes of the CdTe crystal and measurement of the angle between the two element whiskers of GaP.

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Most of Cu-III-VI_2 compounds with chalcopyrite strucyure grow through a peritectic reaction or a solid state phase transition during the cooling process. The traveling heater method (THM) is considered to be a technique suitable for obtaining high quality bulk single crystals of the compounds, since they can be growth below the temperatures of phase transitions. Up to this time, growth of CuGaS_2, CuGaSe_2, CuInS_2 and CuInSe_2 single crystals by the THM with In solvents has been investigated. The CuGa_<0.6>In_<0.4>S_2 solid solution, which is well lattice-matched to ZnS, has also been obtained by using the THM technique.

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Hg_<1-x>Cd_xTe epilayers were grown on CdZnTe substrates by molecular beam epitaxy (MBE). The Cd composition (x) ranges from zero band gap region (ZBG, x = 0.05〜0.18) to narrow band gap region (NBG, x=0.21〜0.29). Substrate orientations are (21l) A, (21l) B, (111) B and (110). First, crystallinity and morphology of epilayers with these four orientations are compared and HgCdTe (21l) B epilayer is found to have best property. Furthermore, twin formation mechanism is discussed, from a viewpoint of growth velocity. Second, Cd composition measurement method is presented and high uniformity of the composition over both surface and depth direction is confirmed for MBE-HgCdTe epilayers. Finally, from Hall effect measurement data for HgCdTe (21l) B epilayers, Hg vacancy formation energy, some indication of electrically compensated properties and carrier scattering mechanism are discussed. For the ZBG epilayers, clear dependence of electron mobility on Cd composition is presented and the maximum mobility is obtained for the x〜0.15 epilayers (just zero band gap at 77 K).

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We have experimentally observed a dense-branching morphology (DBM) in an NH_4Cl dendritic crystal growth. The DBM forms a randomly and densely tip-splitting structure, and the envelope of interface is stable. The measured interfacial velocity of our DBM decreases with a supersaturation. This behavior stabilizes the interface of DBM. The averaged length between tips corresponds to the diffusion length.

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