Journal of the Japanese Association for Crystal Growth

Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275

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Volume 25, Issue 5

Displaying 1-34 of 34 articles from this issue

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[title in Japanese]

Article type: Cover
1998 Volume 25 Issue 5 Pages Cover1-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_Cover1

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[title in Japanese]

Article type: Cover
1998 Volume 25 Issue 5 Pages Cover2-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_Cover2

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[title in Japanese]

Article type: Appendix
1998 Volume 25 Issue 5 Pages App1-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_App1

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[title in Japanese]

Article type: Index
1998 Volume 25 Issue 5 Pages Toc1-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_Toc1

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[title in Japanese]

Article type: Index
1998 Volume 25 Issue 5 Pages Toc2-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_Toc2

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Similarity between Crystal and Living Thing

Takatomo Sasaki

Article type: Article
1998 Volume 25 Issue 5 Pages 191-192
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_191

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Development of New Nonlinear Optical Crystal GdYCOB with Tunable Birefringence

Hiroyuki Furuya, Masashi Yoshimura, Itsunari Yamada, Hiroshi Nakao, Yu ...

Article type: Article
1998 Volume 25 Issue 5 Pages 193-199
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_193

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We have developed a new rare-earth calcium oxyborate crystal Gd_xY_<1-x>Ca_4O(BO_3)_3 (Gd_xY_<1-x>COB) in order to control the birefringence in nonlinear optical crystals. Gd_xY_<1-x>COB (0<x<1) crystals with uniform composition have been grown by the Czochralski method. The non-critical phase matching (NCPM) wavelength for second harmonic generation (SHG) has successfully been tuned in the range from 830 to 970 nm by changing the compositional parameter x. Furthermore, we have succeeded to generate NCPM third harmonic of Nd: YAG laser radiation (1064 nm)

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[title in Japanese]

Article type: Appendix
1998 Volume 25 Issue 5 Pages 200-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_200

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In-situ High Resolution Transmission Electron Microscopy of Melting-Freezing Process of Silicon(<Special Issue>: To Realize the perfect Crystallization)

Ryuichiro Oshima, Fuminobu Hori, Takeo Kamino, Toshie Yaguchi

Article type: Article
1998 Volume 25 Issue 5 Pages 201-206
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_201

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The melting and freezing processes of silicon were investigated by in-situ high resolution transmission electron microscopy (HRTEM) and image processing. Atomic structures of (111) interface planes of the solid and liquid phases have been examined. It is revealed that the interface goes back and forth by the lateral motion of atomic steps on (111) planes as the temperature is changed. A transition region of about 1nm thickness is found to exist between the solid and liquid phases.

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Control of Grown-in Defects in Si Crystal Growth(<Special Issue>: To Realize the perfect Crystallization)

Masataka Hourai, Hideshi Nishikawa, Tadayoshi Tanaka, Takeshi Nomachi, ...

Article type: Article
1998 Volume 25 Issue 5 Pages 207-213
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_207

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Due to the size reduction of advanced ULSIs to subquarter micron level, the influence of grown-in defects appearing in Czochralski-grown silicon (CZ-Si) crystals on the device performance and yield has been widely recognized. Therefore, grown-in defect free crystals are strongly required. In this paper, we will discuss the generation behavior of grown-in defects, based on results obtained up to the present. In addition, we will argue the possibility of grown-in defect free crystals and show that V/G, i.e., the ratio of a growth rate (V) to an axial temperature gradient (G) in the crystals at high temperatures near the melting point, is a key parameter to realize grown-in defect free crystals in the near future which are equivalent to epitaxial wafers in crystal quality.

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Monte Carlo Simulation of Unidirectional Melt Growth with Taking-in Process of Impurity(<Special Issue>: To Realize the perfect Crystallization)

Yoshiyasu Arima, Toshiharu Irisawa

Article type: Article
1998 Volume 25 Issue 5 Pages 214-219
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_214

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Monte Carlo simulation of the unidirectional melt growth is performed to study the solidification process and the taking-in process of impurities at the solid-melt interface. It simulates the Czochralski Silicon growth by using the diamond lattice. The equilibrium and effective distribution coefficients can be evaluated by the simulation. The nucleation of impurity occurs in the melt and the growth is not steady when the interaction of impurity is strong. The structure of growing solid-melt interface is also investigated. The interface of [111] growth is flat in the atomic scale. On the other hand, that of [100] growth is very rough. Then, the growth modes are different by the different crystal orientation of interface. The larger concentration of impurity causes the diffuser interface. The interaction between solid atom and impurity flattens such interface because of more impurities incorporated by the solid.

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Recent Developments in InP Crystal Growth(<Special Issue>: To Realize the perfect Crystallization)

Toshiaki Asahi, Ryuichi Hirano, Kenji Kohiro, Keiji Kainosho, Masayuki ...

Article type: Article
1998 Volume 25 Issue 5 Pages 220-228
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_220

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The recent development of InP crystal growth technologies is reviewed. The improved liquid encapsulated Czochralski (LEC) methods based on thermal baffles are successfully applied to grow 50 mm diameter LEC InP with low dislocation densities. For growing InP crystals with the diameter larger than 75 mm for applications to electronic devices, the pressure controlled LEC methods were firstly developed and are now applied in production scale. The vertical gradient freezing (VGF) method which has the potentiality in growing lower dislocation density crystals had a difficulty in growing <100> single crystals because of twinning occurrence. This difficulty was however solved by the recent development in the VGF method. 100 mm diameter VGF <100> single crystals with the dislocation density level of 2000 cm^<-2> can be successfully grown.

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Remembering the Late Professor Kazumi Nishioka

Isamu Akasaki

Article type: Article
1998 Volume 25 Issue 5 Pages 229-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_229

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In Mourning for Dr. Laudise

Isamu Akasaki

Article type: Article
1998 Volume 25 Issue 5 Pages 230-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_230

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Honored by Receiving the IOCG Laudise prize

Isamu Akasaki

Article type: Article
1998 Volume 25 Issue 5 Pages 231-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_231

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Report on ICCG-12 and ICVGE-10

Tatau Nishinaga

Article type: Article
1998 Volume 25 Issue 5 Pages 232-234
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_232

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[title in Japanese]

Tadashi Ohachi

Article type: Article
1998 Volume 25 Issue 5 Pages 235-237
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_235

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[title in Japanese]

Makio Uwaha

Article type: Article
1998 Volume 25 Issue 5 Pages 238-239
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_238

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[title in Japanese]

Matahito Watanabe

Article type: Article
1998 Volume 25 Issue 5 Pages 239-240
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_239

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[title in Japanese]

Yusuke Mori

Article type: Article
1998 Volume 25 Issue 5 Pages 240-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_240

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[title in Japanese]

Kohichi Kakimoto

Article type: Article
1998 Volume 25 Issue 5 Pages 241-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_241

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10th International Summer School on Crystal Growth

Mitsuyoshi Miyata

Article type: Article
1998 Volume 25 Issue 5 Pages 242-243
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_242

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Report on NCCG-29 and Houdankai-24

Tokuzo Sukegawa, Yasuhiro Hayakawa

Article type: Article
1998 Volume 25 Issue 5 Pages 244-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_244

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On a Crystal Grower's Human Network Based on the Cool Internet

Hiroshi Nakayama

Article type: Article
1998 Volume 25 Issue 5 Pages 245-246
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_245

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On the Way to the Application of Synthetic Quartz : Industrialization of Synthetic Quartz in U.S.A. and Japan

Fumiko Iwasaki, Hideo Iwasaki

Article type: Article
1998 Volume 25 Issue 5 Pages 247-250
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_247

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[title in Japanese]

[in Japanese]

Article type: Article
1998 Volume 25 Issue 5 Pages 251-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_251

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[title in Japanese]

Article type: Appendix
1998 Volume 25 Issue 5 Pages 252-257
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_252

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[title in Japanese]

Article type: Index
1998 Volume 25 Issue 5 Pages 258-260
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_258

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[title in Japanese]

Article type: Index
1998 Volume 25 Issue 5 Pages 260-262
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_260

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[title in Japanese]

Article type: Appendix
1998 Volume 25 Issue 5 Pages 263-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_263

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[title in Japanese]

Article type: Appendix
1998 Volume 25 Issue 5 Pages 264-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_264

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[title in Japanese]

Article type: Appendix
1998 Volume 25 Issue 5 Pages App2-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_App2

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[title in Japanese]

Article type: Cover
1998 Volume 25 Issue 5 Pages Cover3-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_Cover3

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[title in Japanese]

Article type: Cover
1998 Volume 25 Issue 5 Pages Cover4-
Published: December 15, 1998
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.25.5_Cover4

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