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Article type: Cover
1998 Volume 25 Issue 2 Pages
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Article type: Cover
1998 Volume 25 Issue 2 Pages
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Article type: Appendix
1998 Volume 25 Issue 2 Pages
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Article type: Index
1998 Volume 25 Issue 2 Pages
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Article type: Index
1998 Volume 25 Issue 2 Pages
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Isamu Akasaki
Article type: Article
1998 Volume 25 Issue 2 Pages
79-80
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Akinori Koukitu, Hisashi Seki
Article type: Article
1998 Volume 25 Issue 2 Pages
81-98
Published: June 30, 1998
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Thermodynamic studies on metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE) and halide vapor epitaxy (HaVPE) for the growth of nitride semiconductors are reviewed. The equilibrium partial pressures are calculated for the various growth parameters and the required growth conditions are discussed. The phase diagram for the deposition, indicating etching, droplet and growth regions is computed for the growth of binary and ternary nitrides grown by MOVPE and MBE. It is shown that the alloy composition of InGaN grown using MOVPE and the growth rate of GaN grown using HaVPE are thermodynamically controlled. For the MOVPE growth, the origin of the deviation of the InGaN alloy composition from the linear relationship and the existence of a composition unstable region in ternary nitride alloys are discussed. It is also shown that the specific behavior in the growth of nitride semiconductors is attributable to the high growth temperature, the small value of the equilibrium constant of the InN growth reaction, the effect of hydrogen in the growth system, the stability of N_2 produced from NH_3, and the large value of interaction
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C. Sasaoka, H. Sunakawa, A. Kimura, A. Usui, A. Sakai
Article type: Article
1998 Volume 25 Issue 2 Pages
99-105
Published: June 30, 1998
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We studied epitaxial lateral overgrowth (ELO) of GaN by hydride vapor phase epitaxy (HVPE) and metalorganic vapor phase epitaxy (MOVPE) to clarify the behavior of threading dislocations. It was found that the threading dislocations were greatly influenced by formation of facets at the initial growth stage. The epitaxial region with low dislocation density was successfully achieved by both HVPE and MOVPE combined with ELO, though the dislocation reduction mechanism was different between the two. Improvements in device performance on the low-dislocation-density substrate by HVPE are also described.
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Noriyuki Kuwano, Wataru Taki, Kensuke Oki, Yasutoshi Kawaguchi, Kazuma ...
Article type: Article
1998 Volume 25 Issue 2 Pages
106-112
Published: June 30, 1998
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Transmission electron microscope (TEM) analysis has been carried out for the growth process in thick InGaN layers prepared by metalorganic vapor phase epitaxy. In the case of growth on GaN/LT-AlN/α-Al_2O_3 (0001) , a thin InGaN Layer of a good quality can grow with a smooth interface of InGaN/GaN and a smooth (0001) exterior surface. Threading dislocations in GaN penetrate into the InGaN layer and have a pit on each end on the exterior surface of InGaN. By development of the pits, the InGaN layer becomes to have a shape of pyramids with {11^^-01} facet planes. Thereafter, InGaN with a columnar structure is deposited on the pyramids. A two-layer-structure is thus made in the thick layer. Energy-dispersive x-ray spectroscopy (EDX) analysis has confirmed that the lower layer has a lower In content than in the upper one which has the equilibrium composition In_<0.2>Ga_<0.8>N. The lower In content is attributed to the lattice coherence with GaN, or "composition pulling effect". Small grains of InN have been recognized on the surface of the upper layer of InGaN. The grains keep a good lattice coherency with the InGaN layer. On LT-AlN/α-Al_2O_3 (0001) , InGaN with the equlibrium composition grows in a columnar structure. Inside the InGaN layer, domains of a lower In content have been recognized. The domains have a crystal orientation relationship with the matrix of InGaN. These results suggest that the lattice coherency has a strong effect on the formation of inhomogenous regions in InGaN alloys.
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Hajime Okumura
Article type: Article
1998 Volume 25 Issue 2 Pages
113-125
Published: June 30, 1998
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Present status of III-nitride epitaxial growth technique by molecular beam epitaxy (MBE) is reviewed. Recent development of growth facilities including effective nitrogen sources have enabled us to obtain high growth rate, well-defined flat surfaces etc., which resuls in better understandings of growth mechanism and surface phenomena of III-nitrides. Owing to the understandings of these information on MBE growth of III-nitrides, the quality of MBE-grown III-nitride epilayers has been so much improved to be comparable to that of MOCVD-grown epilayers. Device application using MBE-grown III-nitride epilayers is also shown, and several problems to be solved in MBE are discussed.
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Fumiko Iwasaki, Hideo Iwasaki
Article type: Article
1998 Volume 25 Issue 2 Pages
126-129
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Kiyotaka Sato
Article type: Article
1998 Volume 25 Issue 2 Pages
130-
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[in Japanese]
Article type: Article
1998 Volume 25 Issue 2 Pages
130-131
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[in Japanese]
Article type: Article
1998 Volume 25 Issue 2 Pages
131-
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Hayato Sone
Article type: Article
1998 Volume 25 Issue 2 Pages
132-133
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Article type: Appendix
1998 Volume 25 Issue 2 Pages
134-137
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Article type: Appendix
1998 Volume 25 Issue 2 Pages
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Article type: Appendix
1998 Volume 25 Issue 2 Pages
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Article type: Appendix
1998 Volume 25 Issue 2 Pages
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Article type: Appendix
1998 Volume 25 Issue 2 Pages
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Article type: Cover
1998 Volume 25 Issue 2 Pages
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Article type: Cover
1998 Volume 25 Issue 2 Pages
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