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2005 Volume 32 Issue 4 Pages
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2005 Volume 32 Issue 4 Pages
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2005 Volume 32 Issue 4 Pages
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2005 Volume 32 Issue 4 Pages
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2005 Volume 32 Issue 4 Pages
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2005 Volume 32 Issue 4 Pages
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2005 Volume 32 Issue 4 Pages
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Masami Tatsumi
Article type: Article
2005 Volume 32 Issue 4 Pages
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Koichi Kakimoto, Satoshi Uda
Article type: Article
2005 Volume 32 Issue 4 Pages
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Kozo Fujiwara, Noritaka Usami, Wugen Pan, Toru Ujihara, Akiko Nomura, ...
Article type: Article
2005 Volume 32 Issue 4 Pages
291-296
Published: September 30, 2005
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Polycrystalline bulk Si materials are the most important materials for solar cells now and in future. High quality polycrystalline materials controlled crystallographic orientation and grain boundary character is demanded for realizing highly energy conversion efficiency of solar cells. In this paper, we introduce the experimental results of in-situ observation of crystal growth behavior from silicon melt. Structural and solar cell properties of polycrystalline SiGe with microscopic compositional distribution are also introduced.
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C. W. Lan, C. K. Hsieh, W. C. Hsu
Article type: Article
2005 Volume 32 Issue 4 Pages
297-305
Published: September 30, 2005
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The fast growing photovoltaic market is mainly based on crystalline silicon. The strong demand on silicon requires wafer manufacturers to produce high-quality material through high productivity processes with low cost. Therefore, to remain the competition of single crystal silicon in the solar market, highly efficient Czochralski crystal growth is required. In this paper, we discuss some of the important issues in the production of solar-grade silicon by the Czochralski method. Special focuses will be on the hot-zone design and multiple charges. The implementation of these concepts has led to significant cost reduction and yield improvement for both 6" and 8" -diameter solar-grade silicon in production. Some comments for the future development are also given.
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Lijun Liu, Satoshi Nakano, Koichi Kakimoto
Article type: Article
2005 Volume 32 Issue 4 Pages
306-313
Published: September 30, 2005
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A three-dimensional (3D) global model was recently developed for simulation of heat transfer in a Czochralski (CZ) furnace for silicon crystal growth. Convective, conductive and radiative heat transfers in the furnace are solved together in a conjugated way by a finite control-volume method. The model was demonstrated to be valid and reasonable, and it enables 3D global simulations are conducted with moderate requirements of computer memory and computation time. Some results obtained recently using this 3D global model were reported for a small silicon CZ growth in a transverse magnetic field (TMCZ). The results of heat and oxygen transfers in the melt of an electromagnetic CZ configuration (EMCZ) were also introduced. The model showed powerful capability in analyzing heat, mass and oxygen transfers in a CZ configuration.
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Kosuke Nagashio, Kazuhiko Kuribayashi
Article type: Article
2005 Volume 32 Issue 4 Pages
314-324
Published: September 30, 2005
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The various types of facet Si dendrites observed on splatquenched surfaces were analyzed in order to understand why the growth direction and morphology of the facet Si dendrites change with increasing undercooling. The growth directions of typical facet dendrites were determined to be <211>, <110> and <100> using an electron backscatter pattern apparatus. It was found that both the <211> and <110> dendrites with twins were bounded by atomically smooth {111} planes. Therefore, their growth is governed by the incorporation of atoms at reentrant corners formed by twins. The d dendrites with fourfold symmetry have no twins and are commonly observed at high undercoolings. Moreover, two kinds of <100> dendrites with different secondary arm directions <100> and <110> were clarified for the first time. The dendrite tip shape and facet planes, as determined using an atomic force microscope, suggest that the <100> dendrites are bounded by atomically rough {110} and {100} planes. That is, facet Si dendrites vary in their growth direction and morphology with increasing undercooling because the dendrites select atomically rough interfaces in order to promote the incorporation of atoms at high undercoolings.
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Satoshi Uda, Xinming Huang, Shinji Koh
Article type: Article
2005 Volume 32 Issue 4 Pages
325-333
Published: September 30, 2005
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Although langasite (La_3Ga_5SiO_<14>) is an incongruent-melting material, it can directly grow from the "pseudo-congruent melt" via the Czochralski method using a langasite seed crystal when the appropriate supercooling is provided. However, polygonization due to the incongruency of langasite during growth is still a serious problem. To completely prevent from such a defect, the incongruency must convert to the congruency by some manners. The imposition of an external electric field on a growth system changes the chemical potentials of associated phases in equilibrium which could convert the incongruent-melting state into congruent-melting state. Langasite in the ternary system of L_a2O_3-Ga_2O_3 SiO_2, became congruent-melting under an external electric field of 600V/cm. This conversion was attributed to the inversion of the stability relationship in terms of the molar free energy between the primary phase in equilibrium with liquid and the liquid phase at the composition of langasite. Such a transformation is generally possible when the electrical permittivities of liquid, primary phase and incongruent-melting material increase toward the end component of the primary phase.
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Takafumi Yamazaki, Shun-ichi Nakai, Yutaka Anzai, Yoshihira Aoki
Article type: Article
2005 Volume 32 Issue 4 Pages
334-341
Published: September 30, 2005
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The present work has been carried out to produce Cr-doped forsterite (Cr:Mg_2SiO_4) crystals with a high optical gain for a laser amplifier. In order to incorporate Cr^<4+> ions into the crystals as much as possible, the initial Cr content of the melt was increased and the O_2 gas partial pressure of 0.03atm was employed in the growth atmosphere, instead of 0.01atm in the literature. Under such conditions, Cr:Mg_2 SiO_4 crystals with a diameter of 35mm and lengths up to 185mm were successfully grown by the Czochralski method. Subsequently, crystal pieces cut out from the grown crystals were heat-treated at 1780℃ under the O_2 gas pressure of 1atm. As the result of these processes, the Cr^<4+> ion content of the crystal remarkably increased, and the crystal exhibited the optical gain which is two times as large as that of the standard crystal with almost the same as the Cr content of a commercially available one, giving promise of a laser amplifier material. Furthermore, optical microscopic observations, XRD measurements, and EPMA analyses on as-grown crystals showed that the solubility limit of Cr in the Mg_2SiO_4 crystal is only about 0.08wt.%, and that over the solubility limit, inclusions such as MgO and MgCr_2O_4 oxides are incorporated into the crystals, bringing about the occurrence of ill-shaped crystals during the crystal pulling.
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Article type: Appendix
2005 Volume 32 Issue 4 Pages
342-343
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Article type: Appendix
2005 Volume 32 Issue 4 Pages
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Article type: Appendix
2005 Volume 32 Issue 4 Pages
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