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Article type: Cover
2012 Volume 38 Issue 4 Pages
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Article type: Index
2012 Volume 38 Issue 4 Pages
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Article type: Index
2012 Volume 38 Issue 4 Pages
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Article type: Index
2012 Volume 38 Issue 4 Pages
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Article type: Index
2012 Volume 38 Issue 4 Pages
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Article type: Appendix
2012 Volume 38 Issue 4 Pages
217-219
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Hiroshi Fujioka, Motoaki Iwaya
Article type: Article
2012 Volume 38 Issue 4 Pages
220-
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Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
Article type: Article
2012 Volume 38 Issue 4 Pages
221-226
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We report step-free GaN surfaces and mechanisms of nucleus and spiral growths of GaN obtained by using selective-area metalorganic vapor phase epitaxy. The surface of a GaN hexagon with 15-50 μm diameter has a single wide terrace over almost the whole area (step-free surface), when there are no screw-type dislocations in the selective-area. Step-free GaN hexagons grow in multi-nucleation mode. Spiral growth occurs within a selective-area having screw-type dislocations and forms growth spirals on a GaN surface. We estimated the degree of surface super-saturation, σ, from the interstep distance of growth spirals and analyzed dependence of nucleus and spiral growth rates of GaN on σ. The spiral growth rate increased rapidly by increasing σ, while the nucleus one had very low values in the σ range up to 0.23. The σ dependence of both growth rates is well explained by BCF theory.
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Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu ...
Article type: Article
2012 Volume 38 Issue 4 Pages
227-230
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Conventional in situ monitoring techniques for metalorganic vapor phase epitaxy system such as optical reflectometry with visible or infrared light source collect information on surface evolution, growth rate, temperature, and curvature very well. However, they cannot give any structural information in nanometer scale, and it is difficult to analyze the crystalline quality and thin film structure. In this report, we investigated the growth of III-group nitride semiconductors using an in situ X-ray diffraction measurement.
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Narihito Okada, Kazuyuki Tadatomo
Article type: Article
2012 Volume 38 Issue 4 Pages
231-240
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We have carried out growing unpolar GaN layers from sapphire sidewall on patterned sapphire substrates by selective area growth technique. As a result, we revealed that the unpolar GaN layers on the patterned sapphire substrates can be grown even when a growth inhabitation mask is not used. In this article, we report the growth mechanism of the unpolar GaN layers on the maskless patterned sapphire substrates through a low-temperature buffer layer, a nitridation treatment, and an off-cut angle. Based on our experimental results, it was found that the unpolar GaN on the patterned sapphire substrate is a novel growth method in selective area growth technique.
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Yoshio Honda
Article type: Article
2012 Volume 38 Issue 4 Pages
241-248
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(1-101) GaN and (11-22) GaN was grown by MOVPE on etched Si substrate. A characteristic of optical, electrical and impurity was evaluated on each face GaN. We also reported an Indium incorporation and a process of dislocation propagation on the (1-101) GaN in this paper.
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Shigeru Inoue, Jitsuo Ohta, Hiroshi Fujioka
Article type: Article
2012 Volume 38 Issue 4 Pages
249-254
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The use of metal substrates for epitaxial growth of group III nitrides offers various advantages, which include the high thermal conductivity, high electrical conductivity, and high reflectivity. Hence, we can expect improvement in device performances such as heat dissipation and light extraction efficiencies. However, epitaxial growth of III nitride films on metal substrates at high temperatures suffers from serious interfacial reactions between nitrides and metal substrates. We have recently found that the use of pulsed excitation deposition (PXD) technique allows us to reduce growth temperature of nitride films dramatically and to suppress the interfacial reactions between them. We have grown nitride films on single-crystalline metal substrates and investigated the in-plane epitaxial relationships between the nitrides and the metal substrates. The comparison between experiments and theoretical calculations has revealed that in-plane epitaxial relationships between nitrides and metal substrates are determined by the adsorption process of the nitrogen atoms on the metal surfaces.
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Hisashi Murakami, Koshi Hanaoka, Rie Togashi, Katsuhiko Inaba, Yoshina ...
Article type: Article
2012 Volume 38 Issue 4 Pages
255-262
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Growth of In-related nitride semiconductors was investigated by means of metalorganic vapor phase epitaxy (MQVPE) and halide vapor phase epitaxy (HVPE). Semi-polar {101^^-3} InN crystal was grown on GaAs (110) substrates by MOVPE. Mechanisms of twin formation and influences of lattice polarity on the crystalline quality of InN were clarified. On the other hand, growth of thick In_xGa_<1-x>N alloy crystal by HVPE was studied by thermodynamic analysis. It is suggested that growth of In_xGa_<1-x>N alloy with good composition controllability is attained even at relatively high growth temperature by the control of V/III ratio and hydrogen partial pressure in the system.
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Tsutomu Araki, Tomohiro Yamaguchi, Yasushi Nanishi
Article type: Article
2012 Volume 38 Issue 4 Pages
263-269
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Nitride-based nanocolumn structure has been widely studied for the growth, physical property and device application. We have successfully demonstrated fabrication of position controlled InN nanocolumns by ECR-MBE on hole-patterned GaN template fabricated by focused ion beam (FIB). In this paper, we first report on the dependences of morphological changes in C-plane InN nanocolumns on the hole size, growth temperature, and V/III ratios. We also demonstrate successful fabrication of position-controlled A-plane InN nanocolumns. Based on the results on polarity determination, anisotropic growth morphology for A-plane InN crystals is clearly confirmed. Growth rate of InN for N-polar [000-1] direction is higher than that for In-polar [0001] and [1-100] directions. Nano-wall fabrication of A-plane InN by utilizing the anisotropy in growth rate is also demonstrated.
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Atsushi Nishikawa, Yoshikazu Terai, Yasufumi Fujiwara
Article type: Article
2012 Volume 38 Issue 4 Pages
270-273
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GaN-based red light-emitting diodes (LEDs) are highly expected for fabrication of monolithic full-color LED displays and lightings. Recently, we have succeeded in the fabrication of GaN-based red LED by Eu-doping into GaN. In this study, we investigated the luminescence properties of Eu-doped GaN grown by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE). The increase in the optically-activated Eu ions and the enhanced energy transfer from GaN host to Eu ions resulted in improved luminescence properties of Eu-doped GaN-based LED. With increasing the active layer thickness of the LED, the light output power monotonically increased. The maximum light output power of 50 μW was obtained for an active layer thickness of 900 nm with an injected current of 20 mA, which is the highest value ever reported. The corresponding external quantum efficiency was 0.12%. These results indicate that the optimization of the LED structure would effectively improve the luminescence properties.
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Yoshihiro Kangawa, Boris M. Epelbaum, Noriyuki Kuwano, Koichi Kakimoto
Article type: Article
2012 Volume 38 Issue 4 Pages
274-279
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A novel method of AlN solution growth using solid sources was proposed. In this method, a thick layer of single-crystalline AlN was grown epitaxially on an aggregate of self-nucleated columnar AlN crystals. The growth rate was so high that the thickness reaches 〜5 μm in 10 hr. The transmission electron microscopy analysis showed that the AlN layer epitaxially grew on the (1-100) side-wall of the columnar seed crystal and contained threading dislocations (TDs) propagating along [1-100]. The density of TDs was as large as 〜10^9 cm^<-2> in the lower region of AlN layer but decreased down to be 〜10^8 cm^<-2> in the upper region. The reduction in density was confirmed to be due to the formation of dislocation dipoles or half-loops. These results suggest that the present method can grow high-quality bulk AlN under the moderate growth conditions (temperature:T=1250-1200℃, N_2 pressure:p=1 atm).
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Yoshikazu Takeda
Article type: Article
2012 Volume 38 Issue 4 Pages
280-281
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Osamu Oda
Article type: Article
2012 Volume 38 Issue 4 Pages
281-
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[in Japanese], [in Japanese], [in Japanese], [in Japanese]
Article type: Article
2012 Volume 38 Issue 4 Pages
282-284
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[in Japanese], [in Japanese], [in Japanese], [in Japanese], [in Japane ...
Article type: Article
2012 Volume 38 Issue 4 Pages
285-290
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Shigeyuki Kimura
Article type: Article
2012 Volume 38 Issue 4 Pages
291-292
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Article type: Appendix
2012 Volume 38 Issue 4 Pages
293-308
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2012 Volume 38 Issue 4 Pages
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2012 Volume 38 Issue 4 Pages
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2012 Volume 38 Issue 4 Pages
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2012 Volume 38 Issue 4 Pages
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2012 Volume 38 Issue 4 Pages
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Article type: Appendix
2012 Volume 38 Issue 4 Pages
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Article type: Appendix
2012 Volume 38 Issue 4 Pages
312-
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