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Article type: Cover
2005 Volume 32 Issue 5 Pages
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Article type: Index
2005 Volume 32 Issue 5 Pages
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Article type: Index
2005 Volume 32 Issue 5 Pages
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Article type: Index
2005 Volume 32 Issue 5 Pages
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Article type: Index
2005 Volume 32 Issue 5 Pages
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Article type: Index
2005 Volume 32 Issue 5 Pages
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2005 Volume 32 Issue 5 Pages
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Article type: Index
2005 Volume 32 Issue 5 Pages
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Article type: Index
2005 Volume 32 Issue 5 Pages
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Kiyoshi Yase
Article type: Article
2005 Volume 32 Issue 5 Pages
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Gen Sazaki, Yoshinori Ando
Article type: Article
2005 Volume 32 Issue 5 Pages
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Toshihiro Shimada
Article type: Article
2005 Volume 32 Issue 5 Pages
347-352
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Crystalline thin films of small organic molecules are actively studied for the application in transistors. Various techniques have been persued to improve the ordering and the crystallinity of microcrystals. We here report our approach to electronically excite the molecules and growing thin films by photo irradiation. One example is C_<60> grown on MoS_2 (0001) and another is the Alq3 grown on KCl (001). In the case of C_<60> which is known to photopolymerize, nucleation density is increased with threshold as a function of photo intensity, and the second layer is grown at the edge of the first layer. Alq3, a polar molecule widely used in electroluminescence devices, showed a distinct alignment effect, in which the needle crystal domains become aligned with the polarization of the laser.
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Akitaka Hoshino, Yoshiko Takenaka, Masahiro Izukashi, Hidehito Yoshida ...
Article type: Article
2005 Volume 32 Issue 5 Pages
353-357
Published: December 31, 2005
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One of the earliest studies of organic epitaxy using vacuum deposition method is on the epitaxial growth of copper phthalocyanine on alkali-halide substrates. In this study, the relation between the epitaxial orientation and the orientation of a phtalocyanine molecule adsorbed on the substrate was discussed. The origin of the epitaxial orientation, however, has not been well-understood, in particular, in the light of lattice matching at the interface. This article reveals that the misunderstanding about the crystal structures of planar phthaocyanines have prevented its understanding. On the basis of the newly solved crystal structure, the lattice matching at the interface and the effect of the orientation of a phthalocyanine molecule on the substrate are discussed.
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Noriyuki Yoshimoto, Kazuhiko Omote, Yoshio Saito
Article type: Article
2005 Volume 32 Issue 5 Pages
358-364
Published: December 31, 2005
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Vapor deposited organic thin films are constructed with aggregates of islands on alkali halide substrate. Generally, each island orients in the plane with specific epitaxial relationships. Furthermore, it is well known that orientation and polymorphism depend on the growth condition of thin films. We have so far investigated the epitaxy and polymorphism in vapor deposited organic thin films by X-ray diffractmetry. In this article, a large variety of epitaxial thin films of organic compounds on alkali halide substrates are reported and the mechanisms are discussed.
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Reiko Azumi, Shuichi Nagamatsu, Midori Goto, Yuji Yoshida, Kiyoshi Yas ...
Article type: Article
2005 Volume 32 Issue 5 Pages
365-370
Published: December 31, 2005
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Correlation was investigated between the bulk crystal structure of unsubstituted α-oligothiophenes, one of the promising organic semiconducting materials, and structural order and carrier mobility of their vacuum-evaporated thin films. X-ray single crystal analyses revealed that α-quinquethiophene (5T) and α-septithiophene (7T) molecules take more random conformation compared with even-numbered oligomers. Odd-numbered oligothiophenes deposited as thin films at low substrate temperatures present two different crystalline polymorphs, and exhibit low carrier mobilities. The parity of the number of thiophene units affects their structural order in thin films, and also, as a result, carrier mobilities in thin film transistors.
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Mineo Hiramatsu, Masaru Hori
Article type: Article
2005 Volume 32 Issue 5 Pages
371-376
Published: December 31, 2005
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Carbon nanowalls, self-assembled two-dimensional carbon nanostructures standing vertically on the substrate, were fabricated using capacitively coupled, radio-frequency, fluorocarbon plasma-enhanced chemical vapor deposition assisted by H atom injection. The correlation between carbon nanowall growth and the fabrication conditions was investigated. The morphologies of carbon nanowalls were dependent on the types of carbon source gases and the amount of H atoms injected. In the case using C_2F_6/H_2 system, aligned carbon nanowalls were grown vertically on the substrate, while carbon nanowalls grown using CH_4/H_2 system were waved and thin (<10nm). In the case of the deposition without H atom injection, on the other hand, carbon nanowalls were not fabricated. Furthermore, carbon nanoflakes were fabricated using microwave plasma-enhanced chemical vapor deposition employing a mixture of acetylene and hydrogen. As an application using two-dimensional carbon nanostructures, electron field emission from carbon nanoflake film was demonstrated.
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Xinluo Zhao, Yoshinori Ando
Article type: Article
2005 Volume 32 Issue 5 Pages
377-383
Published: December 31, 2005
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Arc discharge evaporation is a cheap and powerful method for producing single-wall carbon nanotubes (SWNTs). Here, the growth condition of SWNTs in arc discharge method is reviewed, and the purification method is also mentioned. By placing the cathode at an oblique angle of about 30° from the anode, the percentage of the cathode deposit to the evaporated materials from the anode has been reduced to less than 20%, and production rate of cottonlike carbon soot has reached to ca 1g/min. High-yield and high-crystallinity SWNTs have been mass-produced by dc arc discharge evaporation of a carbon electrode including 1 at% Fe catalyst in hydrogen mixed gas [i.e., H_2-inert gas (Ne, Ar, Kr, Xe), or H_2-N_2]. The as-grown SWNTs can be easily purified by a liquid-phase and macroscale purification process to obtain SWNTs with purity higher than 90 at%.
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Seiji Akita
Article type: Article
2005 Volume 32 Issue 5 Pages
384-385
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Hitoshi Suzuki
Article type: Article
2005 Volume 32 Issue 5 Pages
386-388
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[in Japanese]
Article type: Article
2005 Volume 32 Issue 5 Pages
389-391
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Article type: Appendix
2005 Volume 32 Issue 5 Pages
392-395
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Article type: Index
2005 Volume 32 Issue 5 Pages
396-397
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Article type: Index
2005 Volume 32 Issue 5 Pages
398-399
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Article type: Appendix
2005 Volume 32 Issue 5 Pages
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Article type: Appendix
2005 Volume 32 Issue 5 Pages
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