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Article type: Cover
1997 Volume 24 Issue 3 Pages
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Article type: Appendix
1997 Volume 24 Issue 3 Pages
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Article type: Index
1997 Volume 24 Issue 3 Pages
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Article type: Index
1997 Volume 24 Issue 3 Pages
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Hiroshi Komatsu
Article type: Article
1997 Volume 24 Issue 3 Pages
253-
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Kazumitsu Mizusima, Yuzo Ogiso, Masao Furusawa, shigeo Sugawara, Yuji ...
Article type: Article
1997 Volume 24 Issue 3 Pages
254-260
Published: July 10, 1997
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Examination by a transmission electron microscopy (TEM) was conducted on configuration, size and density of dislocations and microdefects in undoped (100)GaAs wafers, which were grown from As-rich, nearly stoichiometric and Ga-rich raw materials by the liquid-encapsulated Czochralski (LEC) method. Most of the dislocations were short ones laid on {111} slip planes. Others were long dislocations parallel to the (100) wafer surfaces, dislocation networks, dislocation loops and/or dislocation bundles. Those dislocations sometimes accompanied precipitates, and the dislocation with precipitates increased their density with an increase of the As concentration in the raw materials. In addition, total dislocation density was high in the wafers grown from non-stoichiometric raw materials. On the other hand, TEM showed that the precipitates took some outlines such as rounds, squares or hexagons. They formed preferentially at the dislocations rather than in a matrix, and became greater on density and size with an increase of the As concentration in the raw materials.
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Mitsuo Manaka, Katsuo Tsukamoto, Hiroshi Ohomoto
Article type: Article
1997 Volume 24 Issue 3 Pages
261-269
Published: July 10, 1997
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In order to investigate the difference of the reaction paths between n-and p-tyep pyrite crystals during oxidation at room temperature in aqueous solutions, the shape and size of pyrite cyrstals during dissolution have been measured in various conditions. Two types of experiments were performed by changing the size of pyrite cyrstals. The one was to measure the value of Eh (oxidation-reduction potential) and pH using pyrite crystals ranged from 106 to 125μm. The size was <20μm and thus DLS (Dynamic light scattering) was employed during the dissolution in the other experiment. The oxidation of n-type pyrite proceeds via the oxidation of sulfur, whereas p-type pyrite proceeds via the oxidation of Fe^<2+> to Fe^<3+>. The dofference is attributed to the easiness of sulfur dissolution from the n-type pyrite than from the p-type pyrite due to the sulfur rich compositon. The same applies to easiness of iron dissolution from the p-type pyrite than from the n-type pyrite due to the iron rich composition. Phase-contrast microscopy was also employed to observe the change of the shape of pyrites, which showed a needle shape in the beginning of the dissolution process.
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Hiroyuki Nagasawa, Kuniaki Yagi
Article type: Article
1997 Volume 24 Issue 3 Pages
270-286
Published: July 10, 1997
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The mechanism of 3C-SiC heteroepitaxial growth on Si(001) substrates has been explored using a hot-wall-type low pressure reactor, into which SiH_2Cl_2 and C_2H_2 are fed alternately. To minimize undesirable effects arising from the lattice miss-match that inevitably occurs at the boundary between Si and 3C-SiC, C_2H_2 was used to implement surface carbonization for Si substrates prior to the 3C-SiC growth process. During heating of Si substrates from 500℃ to 1000℃ or higher in the C_2H_2 environment, a single crystalline carbonized layer (3C-SiC) was formed. Following the carbonization of the Si substrate surface, Si H_2Cl_2 and C_2H_2 were alternately fed into the reaction tube to grow epitaxial 3C-SiC film. The growth rate of 3C-SiC was determined from the nummber of Si atoms taken into the surface of the substrate during feeeding of SiH_2Cl_2. However, the number of Si atoms taken into the substrate surface was dependent on the amount of precursor SiCl_2 reduced by the H_2. As a result of the effective suppression of SiCl_2 reduction by the "H_2 intermittent flow" method during feeding of SiH_2Cl_2, it was possible to obtain a constant 3C-SiC growth rate independent of the flow rate of source gases, flow time, and growth temperature. The 3C-SiC film formed on the Si substrate through the alternate supply of source gases was found to consist of anti-phase domains (APDs) and twin planes. The mutual coalescence of APDs during the SiC growth process brought about a reduction in their densities.
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Chihiro Kaito, Seiji Kimura, Nobuhiko Suzuki, Yoshio Saito
Article type: Article
1997 Volume 24 Issue 3 Pages
287-291
Published: July 10, 1997
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Morphology of indium oxide whisker by oxidation of indium in air have been studied by scanning electron microscopic observation. Characteristic morphology seen at 1100℃ have been discussed on the difference of sublimation rate according to the crystal plane. The sublimation speed becomes faster with the order of (110), (i00), (111).
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Ichiro Sunagawa
Article type: Article
1997 Volume 24 Issue 3 Pages
292-301
Published: July 10, 1997
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The basic principles and concepts underlying the present understandings of heteroepitaxy are critically reviewed, based on the observations of regular intergrowths of mineral crystals, which include twinning, co-axial intergrowth, oriented overgrowth, exsolution, topotaxy, etc. The concepts of twin lattice by Friedel. CSL by Kronberg and Wilson, misfit ratio by Royer, PBC misfit by Hartman, misfit dislocation, epitaxial temperature, Frank-van der Merve mechanism, Volmer-Weber mechanism, and Stranski-Krastanov mechanism are explained, leading to a conclusion that the interface energy and driving force are essential in forming regular intergrowths of not only crystals of the same kind but also different kinds. Chernov's summary is also introduced. As a future direction of heteroepitaxy researchs, understanding of biocrystallization in the light of growth mehanism involved in epitaxy is suggested.
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Masao Kitamura, Koichi Kakimoto
Article type: Article
1997 Volume 24 Issue 3 Pages
302-
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Yukio Saito
Article type: Article
1997 Volume 24 Issue 3 Pages
303-310
Published: July 10, 1997
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When the crystal is growing under the control of diffusion field, the moving interface shows the morphological instability, and that leads to the variety of pattern formation. To realize and study the instability numerically, some simple models are introduced for the interface evolution. Simulation of the Kuramoto-Sivashinsky equation for the unstable step realizes and explains the spatio-temporal chaos observed in the lattice-gas Monte Carlo simulation. Simulation of the geometrical model revealed the importance of crystalline anisotropy in the stabilization of dendritic tip. The realistic aspect of long range correlation in the interface motion mediated by the diffusion field can be exemplified in the more complicated boundary element integration simulation for the dendritic growth. The pattern selection is understood as well as the importance of the capillary anisotropy.
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Koichi Kakimoto, Hiroyuki Ozoe
Article type: Article
1997 Volume 24 Issue 3 Pages
311-316
Published: July 10, 1997
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Recent progress of magnetic field effects on melt convecion during single crystal growth was reviewed. A report on enhancement of flow velocity near walls was introduced, although magnetic fields have been accepted to reduce flow velocity of metallic melts. Mechanisms how the melt flow suppresses, and instability of melt flow under vertical magnetic fields were also reviewed.
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Satoshi Uda, Kiyoshi Shimamura, Tsuguo Fukuda
Article type: Article
1997 Volume 24 Issue 3 Pages
317-327
Published: July 10, 1997
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Partitioning of the ionic LiNb0_3 melt species is significantly influenced by the interface electric field, which is intrinsically arisen during crystal growth. Since the electric field is a function of growth parameters such as solute boundary layer thickness, δ_c, growth velocity, V and temperature gradient, G_L, we introduce the dynamic congruent melt composition which leads to a growth with an almost constant composition and very little amount of uncoupled ionic species contained in the crystal. Thus, combinations of δ_c(g), V(g) and G_L(g) were calculated as a function of solidified melt fraction, g, by using a nonlinear programming technique "polytope method" for the crystal growth from the dynamic congruent melt. The "polytope method" is instinctively simple and useful for crystal growth-related optimization problems. The micro-pulling down technique is likely to be the most suitable growth method which can meet the calculated growth conditions.
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Kiyotaka Takano
Article type: Article
1997 Volume 24 Issue 3 Pages
328-
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Hiroaki Takeda
Article type: Article
1997 Volume 24 Issue 3 Pages
329-330
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[in Japanese]
Article type: Article
1997 Volume 24 Issue 3 Pages
331-332
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Article type: Appendix
1997 Volume 24 Issue 3 Pages
333-336
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Article type: Appendix
1997 Volume 24 Issue 3 Pages
337-
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Article type: Appendix
1997 Volume 24 Issue 3 Pages
338-
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Article type: Appendix
1997 Volume 24 Issue 3 Pages
App2-
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Article type: Cover
1997 Volume 24 Issue 3 Pages
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