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2004 Volume 31 Issue 1 Pages
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2004 Volume 31 Issue 1 Pages
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Yasuhiro Shiraki
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Kazumasa Hiramatsu
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Akira Sakai
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2004 Volume 31 Issue 1 Pages
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Tomonori Ito, Yoshihiro Kangawa
Article type: Article
2004 Volume 31 Issue 1 Pages
4-11
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Thermodynamic stability of group IV alloy semiconductors such as Si_<1-x-y>Ge_xC_y solid solutions in bulk and thin film states is systematically investigated by excess energy calculations based on empirical interatomic potentials and Monte Carlo (MC) simulations. In bulk state, the calculated excess energies for Si_<1-x-y>Ge_xC_y have positive values over the entire concentration range. This implies that Si_<1-x-y>Ge_xC_y with a random distribution of Si, Ge and C is thermodynamically unstable at 0K. Furthermore, the excess energies of Si_<1-x-y>Ge_xC_y increase with Ge content x when C content y remains constant. This is because an increase of Ge content introduces large strain energy in Si_<1-x-y>Ge_xC_y. In thin film state, although lattice constraint at the interface reduces the excess energies by 20-30% of those in bulk state, we obtain similar results to those in bulk state. Further MC simulation reveals that Ge atoms segregate in the topmost layer and C atoms accumulate in the second layer. These calculated results suggest that the lattice constraint at the interface enhance the miscibility of C in Si_<1-x-y>Ge_xC_y in thin films, whereas the miscibility tends to reduce near the surface because of the segregation of Ge and C atoms.
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Naoharu Sugiyama, Tsutomu Tezuka, Tomohisa Mizuno, Shin-ichi Takagi
Article type: Article
2004 Volume 31 Issue 1 Pages
12-22
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Recent progress of formation technology for SiGe on insulator structure is discussed. The strained Si on insulator structure, which brings the advanced performance in future CMOS-FETs, requires thin SiGe on insulator layer having high Ge content without dislocations. In order to meet this requirement, Ge condensation method by oxidation of SiGe on insulator structure is introduced and the effectiveness of the method is evaluated. Further discussion in the relation-ship between the relaxation of SiGe layer during the condensation and the roll of dislocation formation is much important to fabricate the thin SiGe on insulator.
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Masanobu Miyao, Isao Tsunoda, Hiroshi Kanno, Kei Nagatomo, Taizoh Sado ...
Article type: Article
2004 Volume 31 Issue 1 Pages
23-28
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Low temperature solid-phase crystallization (SPC) of a-SiGe on SiO_2 has been investigated. Metal induced lateral crystallization of a-SiGe was firstly examined, which achieved strain-free poly-Si_<0.8>Ge_<0.2> with large grains (18μm). In addition, ion irradiation stimulated SPC of a-SiGe was examined, which enabled SPC at a low temperature of 500℃. It was also suggested that local doping of Ge at the a-Si/SiO_2 interface would be a useful tool to control crystal orientation during SPC. These new polycrystalline SiGe films on SiO_2 can be used for the system-in-display and three-dimensional ULSI.
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Kazuo Nakajima, Kozo Fujiwara, Noritaka Usami, Wugen Pan, Gen Sazaki, ...
Article type: Article
2004 Volume 31 Issue 1 Pages
29-37
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Si has been the fundamental electronic semiconductor material and played a primary role for development of the microelectronics industry. Since the conventional approach for improvement of device performance faces its physical limitation, introduction of new material such as SiGeC has been pursued for development of products with more functions and higher performances. Since SiGe is miscible in the entire composition in the solid-phase, its physical properties are widely tuned simply by controlling composition. This paper reviews crystal growth and possible applications of two different crystals based on SiGe, a) monocrystalline SiGe bulk crystal with uniform composition and b) multicrystalline SiGe bulk crystal with microscopic compositional distribution.
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Kohei M. Itoh
Article type: Article
2004 Volume 31 Issue 1 Pages
38-42
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We present silicon isotope superlattices: Si structures in which alternating layers are predominantly composed of the stable isotopes ^<28>Si and ^<30>Si. Using our newly developed Si effusion cells for solid-source molecular beam epitaxy, the thickness of each isotope layer has been precisely controlled to produce isotope superlattices denoted ^<28>Si_n/^<30>Si_n, where n is the number of atomic monolayers, each one 0.136nm thick. We have produced and studied ^<28>Si_8/^<30>Si_8, ^<28>Si_<12>/^<30>Si_<12>, and ^<28>Si_<24>/^<30>Si_<24>, whose structures have been confirmed by secondary ion mass spectrometry. Further confirmation was provided by Raman spectroscopy, which showed the confinement of phonons within specific isotope layers (^<28>Si or ^<30>Si layers) due to the mass periodicity created by isotope layering. Si isotope superlattices will allow us to explore a variety of isotope effects that are believed to be significantly enhanced in nano-scale regions, and that may permit the construction of improved Si-based circuitry.
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Yoshikazu Takeda
Article type: Article
2004 Volume 31 Issue 1 Pages
43-44
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Article type: Appendix
2004 Volume 31 Issue 1 Pages
45-53
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Article type: Appendix
2004 Volume 31 Issue 1 Pages
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Article type: Cover
2004 Volume 31 Issue 1 Pages
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