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Article type: Cover
1995 Volume 22 Issue 5 Pages
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Article type: Appendix
1995 Volume 22 Issue 5 Pages
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Article type: Index
1995 Volume 22 Issue 5 Pages
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Article type: Index
1995 Volume 22 Issue 5 Pages
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Yoshihide Nakazumi
Article type: Article
1995 Volume 22 Issue 5 Pages
357-
Published: December 25, 1995
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Tsuguo Fukuda, Kiyoshi Shimamura, Takuya Kohno, Hiroaki Takeda, Mitsur ...
Article type: Article
1995 Volume 22 Issue 5 Pages
358-363
Published: December 25, 1995
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We have successfully grown new piezoelectric single crystals, La_3Ga_5Si0_<14> (Langasite), with dimensions of 1 or 2 inches in diameter, by the Czochralski technique. La_3Ga_<5.5>Nb_<0.5>0_<14> (LGN) single crystals, which were developed by substituting Si^<4+> of Langasite with Nb^<5+> and Ga^<3+>, were also successfully grown. Device properties of Langasite and LGN resonators and lters were demonstrated. Both single crystals showed superior properties, which situated between thoseo of quartz and LiTa0_3 single crystals, for piezoelectric applications.
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Shigeo Sugawara, Shunji Ishio
Article type: Article
1995 Volume 22 Issue 5 Pages
364-368
Published: December 25, 1995
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After preparing two kinds of epitaxial Al films by vacuum deposition on NaCl substrutes, we observed thermal behavior during heating in a transmission electron microscope. In (III) single-crystal films, many of local dislocations escaped from the films, and small grains shrinked and disappeared with rise in the temperature above 873K, resulting in the films with a better quality. In polycrystalline films with preferred (III) orientations, normal grain growth occurred with raising the temperature; thereafter, newly nucleated grains showed abormal growth along a heat flow to a larger extentin comparison with the normal growth at a temperature above 873K.
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Tooru Katsumata
Article type: Article
1995 Volume 22 Issue 5 Pages
369-
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Taketoshi Hibiya
Article type: Article
1995 Volume 22 Issue 5 Pages
370-387
Published: December 25, 1995
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Liquid Phase epitaxial (LPE) growth of magnetic garnets is overviewed as an example for LPE growth of oxide crystals. Combining material design and the crystal growth process-such as selection of garnet compositions, melt compositions, growth temperature, growth rate, growth orientation and ambient oxygen partial pressure assures superior materials to be used for magnetic bubble domain memory devices and optical isolators. Although {111} is not the natural face of garnets, but rather a kinked surface, {111} growth is used exclusively for magnetic bubble applications, because strong growth-induced uniaxial magnetic anisotropy with easy magnetization axis normal to {111} is obtaines. For magneto-optic device applications, {111} growth is also required. Melt compositions are important in obtaining thick high-quality LPE films without inclusion. Melts with high B_20_3 contents can assure this. For higher figure of merit, garnet LPE films highly substituted with Bi are required. Bi contents of the LPE films are also dependent on melt compositions. High-quality LPE crystals with extrinction ratio as high as 37 dB can be obtained. Knowledge of the phase relationship in obtaining garnet as a primary phase is indispensable. The role of substrate crystals is also discussed from the viewpoint of stress-induced magnetic and optical anisotropies.
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Shinichi Hirano, Toshinobu Yogo
Article type: Article
1995 Volume 22 Issue 5 Pages
388-394
Published: December 25, 1995
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The sol-gel method is one of the promissing methods to synthesize the well-defined films. In this article, the key processing parameters are introduced to prepare the epitaxial oxide film of K(Ta, Nb)O_3 as an example Epitaxial potassium tantalate-niobate (KTa_xNb_<1-x>O_3, KTN) thin films could be synthesized through reaction control of metal alkoxide solution. The structure of KTN precursors in solution was analyzed by NMR spectroscopy. The KTN precursor consists of K[Nb(OEt)_6]and K[Ta(OEt)_6]with a molecular level interaction in ethanol. Staring metal alkoxides including metal-oxygen-carbon bonds were found to undergo bond rearrangement, yielding KTN precursors under the controlled reaction conditions. Perovskite KTN films crystallized on MgO(100) substrates using H_20/0_2 vapor treatment at 300℃ followed by crystallization at 675℃. KTN films on Pt(100)/MgO(100) of perovskite phase also crystallized at 700℃. KTN films were confirmed to have an epitaxy on Pt(100)/MgO(100) substrates by X-ray pole figure analysis. KTa_<0.65>Nb_<0.35>0_3 films on Pt(100)/MgO(100) substrates showed P-E hysteresis at 225K. The Curie temperature of the KTa_<0.65>Nb_<0.35>0_3 film was 310 K.
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Shunri Oda
Article type: Article
1995 Volume 22 Issue 5 Pages
395-402
Published: December 25, 1995
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The present state of art of metalorganic chemical vapor deposition (MOCVD) of thin films of oxide superconductors is reviewed. A very smooth surface film of c-axis oriented YBa_2Cu_30_x(YBCO) with roughness of less than monomolecular layer over 10μm×10μm, free of precipitates, has been obtained by atomic layer-by-layer MOCVD on a SrTi0_3 substrate at 650℃. A very large terrace length of 0.3-O.5μm may be due to the enhanced migration of chemical species on the surface. The result of an attempt to prepare YBCO films with a larger terrace width surface using lattice-matched NdGaO_3 substrates is discussed. The correlation between boulder formation and dislocations in the substrate is clarified and methods for eliminating boulders are proposed.
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Hiroshi Miki, Yoshihisa Fujisaki
Article type: Article
1995 Volume 22 Issue 5 Pages
403-409
Published: December 25, 1995
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Lead Zirconate Titanate (Pb(Zr,Ti)0_3) thin films were depositied on Pt films by metal-organic chemical vapor deposition (MOCVD). Three sources of Pb(DPM)_2, Zr(DPM)_4, and Ti(i-OC_3H_7)_4 were supplied using nitrogen carrier gas and thermally decomposed on the substrate at about 550℃ and 5 Torr of oxidizing atmosphere. The good composition control resulting from the use of Zr(DPM)_4 provided in-depth uniformity near the interface between electrode platinum and deposited film. The variation of composition over a 4" wafer was about 1% achieved by optimizing the source supply and pumping system. These films were less than 100 nm thin enough for LSI memory application. Even 80 nm thick films showed a good ferroelectric hysteresis characteristics with low coecive voltage of O.7V. The dielectric characteristics for application of dynamic random access memories (DRAM) was equvalent to O.4nm of Si0_2 with 2×l0^<-7> A/cm^2 at 1.5v.
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Yuichi Nakagawa
Article type: Article
1995 Volume 22 Issue 5 Pages
410-411
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Yukio Saito
Article type: Article
1995 Volume 22 Issue 5 Pages
412-413
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Seiji Kawado
Article type: Article
1995 Volume 22 Issue 5 Pages
413-414
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Masaru Tachibana, Kenichi Kojima
Article type: Article
1995 Volume 22 Issue 5 Pages
414-415
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Satoshi Uda
Article type: Article
1995 Volume 22 Issue 5 Pages
415-416
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Yoshihiko Goto
Article type: Article
1995 Volume 22 Issue 5 Pages
416-417
Published: December 25, 1995
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[in Japanese]
Article type: Article
1995 Volume 22 Issue 5 Pages
417-
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Article type: Appendix
1995 Volume 22 Issue 5 Pages
418-424
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Article type: Appendix
1995 Volume 22 Issue 5 Pages
425-
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Article type: Appendix
1995 Volume 22 Issue 5 Pages
426-427
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Article type: Appendix
1995 Volume 22 Issue 5 Pages
428-429
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Article type: Appendix
1995 Volume 22 Issue 5 Pages
430-431
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Article type: Appendix
1995 Volume 22 Issue 5 Pages
432-433
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Article type: Appendix
1995 Volume 22 Issue 5 Pages
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Article type: Appendix
1995 Volume 22 Issue 5 Pages
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Article type: Cover
1995 Volume 22 Issue 5 Pages
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Published: December 25, 1995
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