Journal of the Japanese Association for Crystal Growth

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Developments of crystal growth technology in Japan are reviewed up to the middle of ninty-fifties, as a memorial lecture of the 20th aniversary of Symposium on Synthetic Minerals. 1. Verneuil technique : the first plant of ruby manufacture was started in 1934. The growth of rutile single crystal was started in 1951. 2. Crystal growth from melt: optical crystals such as rock salt and other alkali halides were grown from the later stage of 1930's by university professors for their own uses. 3. Crystal growth from aqueous solution : effects of metal ions on the crystal habit of sodium chloride attracted keen interests in 1930's among industrial chemists. Rochelle salt was grown for electronic industries in 1940's. Researches on ADP, EDT and other piezocrystals became active in 1950's. 4. Hydrothermal growth of quartz : the research on the growth of quartz began in 1953. 5. Synthetic micas and synthetic amphibole asbestos : the research on synthetic mica began in 1938. Crystals of fluor-phlogopite up to 1 cm by 2 cm were grown in 1944. In 1960 a method of growth of booklet of fluor-phlogopite crystals was developed. The research on synthetic amphibole asbestos began in 1944. 6. Growth of ferroelectric crystals and ferromagnetic crystals : the researches on the growth of these crystals began in 1951. 7. High pressure mineral synthesis : research works up to 30 kbar hydrostatic pressure started in 1945.

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Nonstoichiometry of III-V and II-IV compound semiconductors is discussed. 1) Electrical properties, lattice constant and photoluminescence are measured to determine the stoichiometry points of GaAs and GaP and to make clear the nature of nonstoichiometric defects. Importance of interstitial As atoms and defect-impurity complexes are emphasized. 2) Nonstoichiometry of HgTe and Hg_<0.82>Cd_<0.18>Te are investigated. Concentrations of three different kinds of carriers (two kinds of electrons and one hole) are determined by Hall effect measurement via magnetic field. 3) Nearly perfect crystal growth of GaP and GaAs is achieved by liquid phase epitaxy by a temperature difference method under controlled vapor pressure. Stoichiometry can be controlled during crystal growth.

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Liquid inclusions in hydrothermally grown ZnO crystals are experimentally studied to confirm hydrothermal growth conditions, that is, p-v-T relations in growth solutions. The p-T curves at the degree of 800% for several concentrations of KOH solvent were determined using a specially made test-tube. The p-T curves were nearly linear beyond the condition, under which liquid and gaseous phases coexist. This extrapolation was confirmed by the measurements of homogenization temperatures of liquid inclusions in the ZnO crystals grown under the same condition as the above described p-T curves. Close agreement between the p-v-T relationships and experimental results given by the heating experiments of the inclusion was obtained.

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