The cleaning of wafer surface in the semiconductor manufacturing process has been carried out on the basis of RCA cleaning procedure proposed by W. Kern et al in 1970. This method uses the cleaning solutions prepared by the respectively mixing of sulfuric acid, ammonia, hydrochloric acid, etc on the basis of hydrogen peroxide, and it is a batch cleaning process in relatively high temperature. Therefore, the problems such as the contamination by chemical vapor in the clean room and the increase of ultra pure water necessary for the rinse of chemicals on wafer surface occurred. The new cleaning procedure was proposed in order to solve the above-mentioned problems. In this method, the consumption volumes of ultra pure water and chemicals are very small, and also the functional water such as ultrasonic wave excitation water, ozonized water and so on are utilized. At the present time, a lot of water called as the functional water widely exists, and there are so many cleaning methods by the functional water in the required fields.
In the present paper, some part of the functional water which is fundamental to cleaning by functional water will be explained briefly.
View full abstract