The purpose is to prepare Silicon dioxide(SiO
2) thin film on resin films for wave–guide. In order to deposit SiO
2 without thermal and chemical damage onto the resin substrate, atmospheric Photo–CVD using SiH
4 and O
3 is investigated. In this study, high deposition rate is obtained to use the reaction of low activation energy using SiH
4 and O
3 under the substrate temperature of 200°C. The comparison with Photo–CVD using pure O
2 comes to the conclusion that O
3 can improve the deposition rate and physical property.
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