Liquid Phase epitaxial (LPE) growth of magnetic garnets is overviewed as an example for LPE growth of oxide crystals. Combining material design and the crystal growth process-such as selection of garnet compositions, melt compositions, growth temperature, growth rate, growth orientation and ambient oxygen partial pressure assures superior materials to be used for magnetic bubble domain memory devices and optical isolators. Although {111} is not the natural face of garnets, but rather a kinked surface, {111} growth is used exclusively for magnetic bubble applications, because strong growth-induced uniaxial magnetic anisotropy with easy magnetization axis normal to {111} is obtaines. For magneto-optic device applications, {111} growth is also required. Melt compositions are important in obtaining thick high-quality LPE films without inclusion. Melts with high B_20_3 contents can assure this. For higher figure of merit, garnet LPE films highly substituted with Bi are required. Bi contents of the LPE films are also dependent on melt compositions. High-quality LPE crystals with extrinction ratio as high as 37 dB can be obtained. Knowledge of the phase relationship in obtaining garnet as a primary phase is indispensable. The role of substrate crystals is also discussed from the viewpoint of stress-induced magnetic and optical anisotropies.
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