Studied is the relation between the temperature slope at room temperature and the current density of forward biased silicon diodes, for the purpose of precise temperature compensation of semi-conductor devices.
Results are:
A) When the forward voltage
V, the current density
j, temp.
T are related by the equation
j=i
sexp
qv/η
KT (1)
1) The mean temp. slope in the range 250∼350°K
M0 is nearly equal the temp. slope at 300°K=
m0 and is proportional to 0.2η log
j.
2) When impurity is diffused in a silicon wafer whose specific resistivity ρ and the life time τ assume the prescribed values, and then when pn-junction and the ohmic contact are performed in the prescribed condition, a)
M0-j diagram of the silicon diode is appoximately parallel, b)
M0 becomes small as the junction area becomes small.
B) If the equation (1) is not valid,
j becoming either too small or too large, the mean temperature slope
M0 becomes larger than the value calculated assuming (1) is valid.
C) If τ
0=[τ] 300°K is hardly affected by the surface condition,
m0 is approximately represented by
m0=0.2ηlog
j-β (2)where β=1.87, 2.00, 2.10, 2.20, 2.25 corresponding to ρ=0.01, 0.1, 1, 10, 100, respectively.
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