This paper is concerned with a new method for automatic diameter control of a silicon single crystal rod in its growth. For the same purpose, several optical methods have been applied in the past. For example, the meniscus formed between the crystallized and melted material has been measured by using either a radiation pyrometer or industrial television.
In our new method, the weight (
W) and the length (
L) of a single crystal rod in growth are measured separately without using any optical equipment, and the ratio
ΔW/ΔL is controlled to become constant. As the magnitude of the ratio is directly proportional to the sectional area of a single crystal rod, a crystal rod having constant diameter is obtained in its growth.
A new temperature control system is also applied in this method. Using a thermal converter to sense the power of the heater, this heater power is always held constant automatically. If any fluctuation of the power source is observed, the thermal converter starts controlling at once to hold the power of the heater constant. Because the time constant of the heater is greater than that of the thermal converter, the temperature fluctuation of the heater is minimized without using the conventional thermocouple or radiation pyrometer.
In order to weight the crystal rod, we have developed a special sensitive load cell made of unbonded
P type silicon strain gauges. The sensitivity of this load cell is more than 1×10
-5 of its span, and its hysteresis is very small. A temperature control method is proved more difficult than a pulling speed control method for obtaining automatic diameter control, by the result of measuring the indicial responses of both methods.
By using our new method, the diameter of a crystal rod can be controlled within ±1% of its diameter, and single crystals without dislocation are grown easily.
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