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Volume 2 (1989)
- Issue 3 Pages 324-
- Issue 2 Pages 143-
- Issue 1 Pages 21-
Volume 2, Issue 1
Displaying 1-11 of 11 articles from this issue
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Tadatomi Nishikubo, Katsumi Inomata, Tsutomu Shimokawa1989 Volume 2 Issue 1 Pages 21-23
Published: 1989
Released on J-STAGE: August 01, 2006
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T. Ichino, S. Sasaki1989 Volume 2 Issue 1 Pages 39-40
Published: 1989
Released on J-STAGE: August 01, 2006
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T. Yamashita, H. Higuchi, K. Horie, I. Mita1989 Volume 2 Issue 1 Pages 41-42
Published: 1989
Released on J-STAGE: August 01, 2006
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Hideaki Mochizuki, Toshihiko Omote, Ken'ichi Koseki, Tsuguo Yamaoka1989 Volume 2 Issue 1 Pages 43-44
Published: 1989
Released on J-STAGE: August 01, 2006
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Shangxian Yu, Jiangnan Cu, Fang Wang, Xiaoyuan Fu, Ting Luo1989 Volume 2 Issue 1 Pages 51-56
Published: 1989
Released on J-STAGE: August 01, 2006
JOURNAL FREE ACCESSA lung oil-pyrogallic acid resin(TPA) was synthesized successfully.After that, an ester condensation reaction between TPA and 1, 2-naphthoquinone 2-diazide 5-sulfochloride(NAC-5) was carried out resulting in the naphthoquinone diazide sulfonated tung oil-pyrogallic acid resin(NAC-5-TPA) as shown in formula[1]: It can be used for a positive resist developed by alkaline solutions. The minimum quantity of exposure energy required for the colour change of this resist and the quantity of exposure energy required for preparing the plate were 23.9mJ/cm2 and 320mJ/cm2 respectively. It has considerably high resolution power and acid and organic solvent resistances.
Quantum chemical studies on the mechanism of the reaction of introducing pyrogallic acid into tung oil have been performed, the results obtained are as follows: When oxalic acid was used as a catalyst, the reaction is mainly orbital controlled. The research on the reaction kinetic of UV-photolyzis process for NAC-5-TPA resin indicated that the photolysis reaction follows the rule of a first-order reaction and is a pure photolysis process.View full abstractDownload PDF (219K) -
Weiping Zeng, Yasuhiro Yoneda, Yasuhiko Shirota, Masataka Endo, Yoshiy ...1989 Volume 2 Issue 1 Pages 57-58
Published: 1989
Released on J-STAGE: August 01, 2006
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Zheng-fang Wang, Yu-qian Du, Jun Xu1989 Volume 2 Issue 1 Pages 89-93
Published: 1989
Released on J-STAGE: August 01, 2006
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Keiji Watanabe, Shoji Shiba, Kazumasa Saito, Yasuhiro Yoneda1989 Volume 2 Issue 1 Pages 103-108
Published: 1989
Released on J-STAGE: August 01, 2006
JOURNAL FREE ACCESSWe studied the use of a ladder-structure silicone, polyvinylsilsesquioxane introduced phenyl groups(PVSS-P), as a negative bi-level resist for deep-UV lithography.
We synthesized PVSS-P by hydrolysis of vinyltrichlorosilane and phenyltrichlorosilane followed by dehydrized condensation copolymerization. The residual active silanol groups in the polymer were terminated with trimethylchlorosilane.
We found that the PVSS-P is highly sensitive to deep-UV light, Dg0.5=75mJ/cm2, because the phenyl group generates radicals to cross-link vinyl groups when exposed to deep-UV light, and no oxygen-inhibitation effect when exposed to air.
PUSS-P is highly resistive to reactive ion etching in oxygen plasma (0z-RIE) because of its high silicon content. The etch rate of PVSS-P is about one hundredth as large as that of hard-baked MP1300 resist, used as a planarizing layer.
PVSS-P also forms good pattern profiles because of its high thermal stability. A 0.4μm pattern can be delineated with PVSS-P/MP-1300 bi-level resist systems using a KrF excimer laser stepper.View full abstractDownload PDF (203K) -
Yoshiyuki Tani, Masaru Sasago, Harry Fujimoto1989 Volume 2 Issue 1 Pages 123-131
Published: 1989
Released on J-STAGE: August 01, 2006
JOURNAL FREE ACCESSKrF excimer laser lithography is one of the most exciting technologies for sub-micron VLSI development and manufacturing in recent years. This technology has the capability to fabricate patterns below 0.5micron. Good resist pattern profiles are not obtained using conventional naptho-quinonediazide-novolac resin deep UV resist because of the strong photoabsorption in the resist. In order to solve this problem, new high transparency positive KrF excimer laser resists, STAR-P, have been developed.
In this paper the characteristics of several STAR-P series resists are presented. These resists are formulated using Poly(styrene-co-maleic acid half ester) for the base polymer and various 2-diazo-1, 3-dicarbonyl sensitizers. UV spectra, dissolution inhibition characteristics, and exposure characteristics of these resists are discussed. Poly(styrene-co-maleic acid half ester) has a high transmittance of 70% for a 1.0micron thick film at 248nm. As a result these resists have excellent properties; high contrast and high transparency for KrF excimer laser lithography.View full abstractDownload PDF (272K) -
Hiroyuki Niino, Masashi Nakano, Shozaburo Nagano, Akira Yabe, Hisao Mo ...1989 Volume 2 Issue 1 Pages 133-137
Published: 1989
Released on J-STAGE: August 01, 2006
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Yasuhiro Yoshida, Hirofumi Fujioka, Hiroyuki Nakajima1989 Volume 2 Issue 1 Pages 139-141
Published: 1989
Released on J-STAGE: August 01, 2006
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