The precipitation phenomena of the intermediate phase (θ' phase) in Al-4wt%Cu-Sn alloys containing 00.066 wt% Sn were examined at 200 and 250°C, to make clear the influence of the secondary defect structure (dislocation loop structure) which varied with Sn contents of the alloy. The results were as follows:
(1) In the binary alloy, θ' generally precipitated on dislocation loops. However, in the ternary alloys, the precipitation of θ' was confirmed to be almost independent of dislocation loops and θ' became finer and denser as Sn contents increased.
(2) As to the precipitate free zone (P.F.Z.) developed near the grain boundary, its width in the binary alloy accorded well with that of the loop free zone (L.F.Z.). However, in the ternary alloys, θ' easily nucleated within L.F.Z. in the same way as inside the grain, so that the width of P.F.Z. became very narrow.
(3) In the ternary alloys, it was observed that Sn rich phase formed at the very early stage of aging in the region close to the grain boundary as well as inside the grain, and then θ' precipitated on the Sn rich phase.
(4) In the case of direct quenching to the aging temperature, coarse θ' formed in the binary alloy where no dislocation loops formed. In contrast to this, the mode of precipitation of θ' in the ternary alloys was almost same as in usual quenching, since the Sn rich phase also formed in this case.
(5) As the results, it would be clear that the fine distribution of θ' and the enhanced precipitation at elevated temperatures so far observed in the ternary alloys were attributed to the heterogeneous precipitation of θ' on the Sn rich phase.
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