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Jin-Song Li, Kazumi Nishioka, C Holcomb Eric R
Article type: Article
1997 Volume 24 Issue 2 Pages
127-
Published: July 01, 1997
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The Gibbs formula for the reversible work of forming a critical nucleus is summarized in multicomponent systems and the meaning of the bulk term or the driving force for nucleation is discussed.
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Li. Jjn-Song, Kazumi Nishioka, Maksimov lgor L
Article type: Article
1997 Volume 24 Issue 2 Pages
128-
Published: July 01, 1997
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The theory of the kinetic critical nucleus is extended to binary systems for vaporliquid transition and derive the equations to determine its size and composition.
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Li. Jjn-Song, Kazumi Nishioka, Maksimov lgor L
Article type: Article
1997 Volume 24 Issue 2 Pages
129-
Published: July 01, 1997
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By introducing a timc-depcndent orthogonal curvililinear coordinate system and a generalized kinetic potential in the size space. nuclcation flux for binary systems is studied.
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Masaaki Sanada, Nobuyuki Donkai, Kazumi Nishioka
Article type: Article
1997 Volume 24 Issue 2 Pages
130-
Published: July 01, 1997
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We calculated the nucleation rate in nozzle in the ionized cluster beam technique by combining the homogeneous nucieation theory with the fluid mechanics. We clarfied the conditions as to the nozzle shape or the kind of materials for producing a significant number of clusters.
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Atsushi MORI, Hiroyuki SHINJO
Article type: Article
1997 Volume 24 Issue 2 Pages
131-
Published: July 01, 1997
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We carried out a molecular dynamics simulation of rod-like crystalline clusters of hard spheres in their melt. We investigated under three differrent conditions. Clusters did not appear to possess rounded cross-sections : two of them were less symmetric and the remainder was seemed to be surrounded by {110} faces mainly.
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Y Yoshioka, K Takagaki, M Kasuga
Article type: Article
1997 Volume 24 Issue 2 Pages
132-
Published: July 01, 1997
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In vapor growth of CdTe layer on CdTe, condition for twin formation was derived on the basis of BCF theory and was compared to tho experimental results and Monte Carlo simulalion. Low supersaturation and small step intorval are found to ravor formation of single crystal Films. Dimer formation seems to be a key process to winning.
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Michimoto KAMINAGA, Tadashi Ohachi
Article type: Article
1997 Volume 24 Issue 2 Pages
133-
Published: July 01, 1997
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States of nucleation of the low temperature phase(β-phase)of silver selenides, of which were prepared by a melt method, a solid/vapor reaction method and a coprecipitation method, were studied by DSC. Their peaks of DSC were sharp or broad because the velocities of their interface movement were changed by states of crystal structure. grain boundary and lattice defects.
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Kvouzo SENGOKUA, Tadashi OHACHI, Shigenobu OKADA, Katsuo TSUKAMOTO, To ...
Article type: Article
1997 Volume 24 Issue 2 Pages
134-
Published: July 01, 1997
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Comparison between micro gravity and normal gravity, threshold current curve width is more narrow and peak value of current is more under micro gravity than that under normal gravity. Under normal gravity only, threshold current curve width is more narrow and peak value of current is more as solution temperature rise up.
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S Narimatu, Y Kawamura, T Ozawa, Takano K.J
Article type: Article
1997 Volume 24 Issue 2 Pages
135-
Published: July 01, 1997
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The role of pressure on nucleation mechanism has been searched by observing critical supersaturation of nucleation of p-Xylene with a solvent of m-xylene at high pressure. The interfacial tension, deduced from the critical supersaturation of nucleation, increased with increasing pressure and decreased with incresing temperature. The present result supports the theory of Guggenheim.
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Y Arima, T Irisawa
Article type: Article
1997 Volume 24 Issue 2 Pages
136-
Published: July 01, 1997
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Growth process of A-B two-component crystal is investigated in atomic scale by means of Monte Carlo simulation. When the bond energy φAB is larger than φAA and φBB,the orderliness of grown crystal can be defined as the ratio of the number of A-B bonds to the total number of nearest neighbor bonds. The dependence of the orderliness on the ratio of partial prcssures is analyzed. The formation of antisite defect is also discussed.
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Hirokazu Ohmi, Koh Wada
Article type: Article
1997 Volume 24 Issue 2 Pages
137-
Published: July 01, 1997
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The microscopic mechanism of the currentinduced domain conversion phenomena on the Si(00l)vicinal surface is studied on the basis of the kinetic,equation derived by the path probability method(PPM)of noncquilibrium statistical method. The results of numerical calculation suggest that the domain conversion is caused by the anisotropy of binding energy of neighboring atoms along with the Schwoebel effect at steps under heating current.
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Noriko Akutsu, Yasuhiro Akutsu
Article type: Article
1997 Volume 24 Issue 2 Pages
138-
Published: July 01, 1997
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We present a statistical mcchanical method to calculate step tension and step stiffness of a recon-structed surface. We apply the method to Si(001)reconstructed surface[1,2]. From the microscopic kink energics[1],we obtain reliable thermal evolution of t step stiffness which can be seriously compared,with experiment[2]
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Noriko Akutsu, Yasuhiro Akutsu
Article type: Article
1997 Volume 24 Issue 2 Pages
139-
Published: July 01, 1997
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We presents statistical mechanical calculation of step quantitics of two-dimcnsional lattice gas model of wurtzite crystal surfaces(interfaces). For Ih-ice, we obtain microscopic kink formation energy from roughening transition temperature.
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Kenichi Tsurumaki, Noriko Akutsu
Article type: Article
1997 Volume 24 Issue 2 Pages
140-
Published: July 01, 1997
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We study one-dimensional quantum transport through super-lattice potentials in electric field. The system is known to show quasichaotic behavior. We introduce width fluctuation of the potential barriers which exists in realistic systems. The "burst" at the zone boundary is not affected, but the non-stationary quasi-chaotic behavior in a zone is destroyed by the fluctuation.
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Balykov Lev N, Masao Kitamuta, KaZumi NiShioka
Article type: Article
1997 Volume 24 Issue 2 Pages
141-
Published: July 01, 1997
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1.Introduction,According to modern theories of crystallization, growh occurs oniy at kink-sites on the step. The number density of kinks on a step is indeed one of the key parameters needed to determine growth velocity. An expression for equilibrium kink density was given by BCF. A differential equation for a kirLk density along a [1,0] step, under conditions of low temperatures and supersaturations, was introduced by J.P. van der Eerden. A steady-state solution was given.
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Masahide Sato, Makio Uwaha, Yukio Saito
Article type: Article
1997 Volume 24 Issue 2 Pages
142-
Published: July 01, 1997
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We show that wandering of an isolated step can be controlled by changing the direction of drift of adatoms. When the drift is perpendicular to the step, the step obeys the KuramotoSivashinsky equation and shows chaotic behavior. When the drift has a component parallel to the step, the step obeys the Benney equation and shows a regular pattern.
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Yuichi Matsui, Makio Uwaha
Article type: Article
1997 Volume 24 Issue 2 Pages
143-
Published: July 01, 1997
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We study instabilities of steps on a crystal surface growing from a solution with fiows: wandering instability of an isolated step and bunching instability of a step train. These instabilities occur when steps move against flows. The evolution of steps can be dcscribed by nonlinear equations; Kuramoto-Sivashinsky equation for the wandering and Benney equation for the bunching.
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Takao Yamamoto, Yasuhiro Akutsu, Noriko Akutsu
Article type: Article
1997 Volume 24 Issue 2 Pages
144-
Published: July 01, 1997
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The relaxation process of vicinal surface is analyzed by the Ginzburg Landau Langevin(GLL)equation based on the harmonically interacting step picture. Using the GLL equation, we calculate the time evolution of the quantities expressing step fluctuation, such as the step diffusion length, the step deformation width and the step fluctuation width. The GLL analysis shows a scalinglaw behavior of those quantities.
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Takao Yamamoto, Noriko Akutsu, Yasuhiro Akutsu
Article type: Article
1997 Volume 24 Issue 2 Pages
145-
Published: July 01, 1997
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To aualyze the relaxation process of vicinal surface, the Ginzburg-Landau-Langevin(GLL)equation based on the harmonically-interacting step picture has been proposed.The GLL analysis shows a sealing-law behavior of step fluctuations. We compare a Monte-Carlo calculation with the analytical results.
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K Kawai, M Uwaha, K Nishino
Article type: Article
1997 Volume 24 Issue 2 Pages
146-
Published: July 01, 1997
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We study the supersaturation dependence of growth rates for the two symmery directions,<10> and<11>,of a 2D square lattice model by means of Monte Calro simulation. As supcrsaturation is raised, the growth rate in <10> direction exceeds that in<11>direction.
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Etsuro Yokoyama
Article type: Article
1997 Volume 24 Issue 2 Pages
147-
Published: July 01, 1997
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A Monte Carlo model the pattern formation in the growth of tow dimensional negative crystals is presented.The model takes into account surface kinetic processes such as a process of diffusion of growth unis on the surface and aprocess of attachment and evaporation.Our simulation results demonstrate that the influence of activation energy for adsorption on the babit change in growth of crystals.
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Yoshikazu Giga, MiHo Giga
Article type: Article
1997 Volume 24 Issue 2 Pages
148-
Published: July 01, 1997
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An interface controlled model of suface evolution is often dbcusced in crystal growth problem to describe the motion of phase boundaries. In low temperature facets appear in evolutions. The governing equation is no longer a PDE and the curvature effect is nonlocal. There are several ways to clarfy the evolution law. In this talk we give a general framework to decribe these problems and prove that the evolution is approximated by the evolution by smooth interfacial energy approximating the singular interfacial energy.
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Tadashi OHACHI, Kazumi YOSHIDA
Article type: Article
1997 Volume 24 Issue 2 Pages
149-
Published: July 01, 1997
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Equilibrium crystal shape(ECS)of silver-sulfide is stedied by a scanning electron microscope. ECS of face centered cubic appeared between 700℃ and 750℃ with a silver single crystal. ECS at solid/solid interface depends on the relationship between orientations of two sold phases.
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H Awano, Y Tamura
Article type: Article
1997 Volume 24 Issue 2 Pages
150-
Published: July 01, 1997
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Quasi two-dimensional electrodeposition of a low-conductive TMB(3.3',5.5'-tetrametylbenzidine)cation radical salt in an cell with parallel electrodes is observed. Based on the time evolution of the growth rate, growing mechanism of the crystal is discussed.
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M Shimizu, K Inoue, K Kono, M Tachibana, K Kojima
Article type: Article
1997 Volume 24 Issue 2 Pages
151-
Published: July 01, 1997
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N-methylurea crystals, which is one of a few nonlinear optical crystals for ultraviolet light, were grown from the melt by Czochralski method and their perfections were assessed by X-ray topography. The crystal defects, especially dislocations, were individually observed on the topographs, and characterized.
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K Kono, M Shimizu, M Tachibana, K Kojima
Article type: Article
1997 Volume 24 Issue 2 Pages
152-
Published: July 01, 1997
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2, 3-dimethylnaphthalene crystals with large size and high quality were grown. from the melt by Bridgman method. Not only grown-in dislocations but also slip dislocations in the crystals were characterized by X-ray topography.
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Y Hayakawa, A Hirata, T Wada, D Hirose, T Yamaguchi, Y Okano, J Shimiz ...
Article type: Article
1997 Volume 24 Issue 2 Pages
153-
Published: July 01, 1997
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Both dissolution of GaSb into InSb melt and growth of InGasb were performed using a chinese recoverable satellite. The In concentrational profile of the space sample was compared with that of the earth sample.
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Y Hayakawa, K Okitsu, T Yamaguchi, A Hirata, Y Okano, N Imaishi, koji ...
Article type: Article
1997 Volume 24 Issue 2 Pages
154-
Published: July 01, 1997
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Mixing experiments of multicomponents melts were performed using a unifornl teJnperature furnace under microgravity and on earth. Growth morphologies and In concentrational profiles were analyzed. The diffusion coefficieint of In was3.5×10^<-4>cm^2/s under micrograbity.
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T Kaneko, N Miyagawa, K Sasaki
Article type: Article
1997 Volume 24 Issue 2 Pages
155-
Published: July 01, 1997
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La-doped Bi2201 single crystals were grown by the traveling solvent floating zone method at different doping levels. A maximum Tc=28K is achieved for Bil.9Sr1.6La0.5CuOz.(〜1×5mm).
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S Higuchi, Y Furukawa, S Takekawa, K Kitamura
Article type: Article
1997 Volume 24 Issue 2 Pages
156-
Published: July 01, 1997
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Cerium doped yttrium iron garnet(Ce:YIG)was grown by the floating zone(FZ)method. When growing 10% cerium doped YIG without any solvent, the meltzone progressively became wider and dropped. In the case of 5% cerium dopjng, crystal growth using a solvent of 15% cerium was successfully performed since the traveling solvent mechanism worked well.
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Mikio Higuchi, Tomohiro Shonai, Kohei Kodaira
Article type: Article
1997 Volume 24 Issue 2 Pages
157-
Published: July 01, 1997
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Thin Nd:WO_4 Single crystals were grown by the floating zone method With an infrared convergence type heater, The minimum diameter obtained was about 0.8 mm. Crystal quality, such as dislocation density, was improved with decreasing cnlstal diameters.
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Hisashi Matsumura, Humihiko Takei
Article type: Article
1997 Volume 24 Issue 2 Pages
158-
Published: July 01, 1997
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Crystals of MnGe0_3 and Mn_2GeO_4 have been grown by floating-zone method. Crystal rods of 8mm in diameter and 40mm in length were obtained. The structural and chemical properties of the crystals were investigated by X-ray diffraction, electron probe microanalysis.
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M Kumatoriya, H Takeda, K Shimamura, H Takagi, T Fukuda
Article type: Article
1997 Volume 24 Issue 2 Pages
159-
Published: July 01, 1997
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Al substituted Langasrte crvstals,La_3(Ga_<5-X> Al_X)Si0_<14>were synthesized by solid phase reaction, μ-pulling down and Czochralski techniques. From the result of solid phase reaction,χ=2.0 was found to be limit of substitution. In χ=0.5 crystal which was grown by Czochralski method, electromechanical coupling coefficients, k_<26>and k_t compared favorably with that of La_3Ga_5Si0<14>
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Takao ISHII, Shintaro MIYAZAWA
Article type: Article
1997 Volume 24 Issue 2 Pages
160-
Published: July 01, 1997
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We investigated the Czochralski growth of uGa0_2 single crystal for use as a substrate for the epitaxial growth of hexagonal GaN. We fbund that [001] pulling provides the crystal with a multi-polar domain, while [010] and/or [100] pulling results in the crystal with a single-polar domain. GaN thin film grew only on the hardly etched suface of(001) LiGa0_2 substrate with a single polar domain.
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Y Kikuno, N Yamamoto, K Wakita
Article type: Article
1997 Volume 24 Issue 2 Pages
161-
Published: July 01, 1997
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THM growth of CuAlSe_2 and CuAlS_2 was successfully carried out for the first time. Use of BN crucible, which prevent direct reaction of Al with silica ampoule, made chemically stable both the yielded feed crystals and THM grown crystals considerably.
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H Kouta, Y Kuwano
Article type: Article
1997 Volume 24 Issue 2 Pages
162-
Published: July 01, 1997
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<110> direction-growth ofBBO was carried out by CZ method. A scattered light.intensity of the grown crystal was reduced to 1/20 times compare with the former crystals. An anisotropy of scattered light indicate that the dipole moment of the scattering center should be large along the c-axis direction.
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Mikito Mamiya, Takuya Suzuki, Humihiko Takei
Article type: Article
1997 Volume 24 Issue 2 Pages
163-
Published: July 01, 1997
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Influence of Partial oxygen pressure in phase relation of the Bi-based superconductors and the Bi_2SrO_4-SrCu0_2 system are studied. In the case of Bi-4805, decomposition under oxygen free atmosphere starts around 850℃ which is about 80℃ lower than that of air atmosphere.
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A Ocafrain, S Takekawa, K Kitamura
Article type: Article
1997 Volume 24 Issue 2 Pages
164-
Published: July 01, 1997
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Large single crystals of the n-type superconductor Nd_<2-X>Ce_XCuO_4(0.05<x<0.15)were grown by the traveling solvent floating zone method. The crystals (typically 4 mm in diameter and several cm in length)were examined in terms of stoichiometry, cerium homogeneity and superconducting properties.
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N Kaneko, S Takekawa, K Kitamura, S Hosoya, Y Endoh
Article type: Article
1997 Volume 24 Issue 2 Pages
165-
Published: July 01, 1997
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Due to the fact that Fermi surfaces of the electron-doped superconductors are different from those of the hole doped, microscopic studies on the dynamical characters of the former materials might bring a solution to the mechanism of high temperature superconductivity. Pr_<2_X>Ce_XCu0_4 was chosen to investigate the magnetic excitations using ncutron scattering experiments because Pr^<3+>ions have a very low background level in neutron scattering in comparison with other rare-earth ions. Flux, TSSG and TSFZ method were used to grow it. Here, a comparativc studics in crystal growth between Pr_<2_X>Ce_XCu0_4 and other electron-dopcd materials wiil be reported.
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M SASAURA, S MIYAZAWA
Article type: Article
1997 Volume 24 Issue 2 Pages
166-
Published: July 01, 1997
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Crystal twisting was observed in PrSrGa0_4 crystal growing. When crucible rotation was applied to PrSrGa0_4 melt, rotated flow pattems cotild be observed instead of axial thermal convection. This rotated flow was practical for preventing twisting. Crucible rotation effect was investigated in detail.
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T Inoue, K Nishioka
Article type: Article
1997 Volume 24 Issue 2 Pages
167-
Published: July 01, 1997
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In NCCG-27(1996), we presented the habit changes in NaBrO_3 crystals grown from the solution doPed with acetic acid (1.15 mol.%). In this work, the habit changes in NaBrO_3 crystals grown from nominally pure solution were studied. The gross morphologies of the crystals grown in the experiment have taken on three distinct forms: cubic, tetrahedral and polyhedral. The controlling factors have been found to be growih temperature and supersaturation. The result in nominally pure solution was compared with that in doped one.
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K Yamaguchi, T Inoue, K Nishioka
Article type: Article
1997 Volume 24 Issue 2 Pages
168-
Published: July 01, 1997
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KCI crystals were grown by the evaporation method from aqueous solution doped with Pb.The perfection was examined by an etching method. Dislocation density in the crystals grown from seeds was always much higher than that in the crystals grown from spontaneous nuclei. Some crystals grown from spontaneous seeds were practically free of dislocations.
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S Hayashi, Y MotomuraA, E Izawa
Article type: Article
1997 Volume 24 Issue 2 Pages
169-
Published: July 01, 1997
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Siliceous precipitate was collected from Otake-Hatchobaru geothermal power plants in Japan. The siliceous material is composed essentially of amorphous silica, but the micro-grains (up to 100 μm in size)are usually locatad in-between the spherical particles of amorphous silica(3-15 μm in size)Microorganic, such as bacteria, would play an important role in the precipitation of amorphous silica.
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K Fujioka, M Nakatsuka, J Kobayashi, K Takakura, H Kishihara
Article type: Article
1997 Volume 24 Issue 2 Pages
170-
Published: July 01, 1997
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We succeoded in getting higher level of supersaturation up to 120% realized by the pH control and the over-heating of the growth solution and in growing a KDP [KH_2PO_4] crystal(64×63×43 mm)with an average rate of 54 mm/day. The rapidiy grown crystal had lower laser damage threshold than the conventionally grown crystal dueto its optical distortion. Such properties of which were improved by thermal conditioning. This tcchnology is available to apply to other water-soluble crystal such as Triglycine Sulphate [(NH_2CH_2COOH_3)H_2S0_4,TGS] and L-Alanine-doped TGS [LATGS] used for the thermal detector.
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Osamu Shimomura, Yutaka Yoshii, Motoki Kasai
Article type: Article
1997 Volume 24 Issue 2 Pages
171-
Published: July 01, 1997
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High speed growth of KDP single crystals were done in the solution overheated at 87℃ for 12 hours using computer controlled system. As a result, wide temperature range in the region of supersaturation was obtained.
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Hiroaki Adachi, Yusuke Mori, Takatomo Sasaki
Article type: Article
1997 Volume 24 Issue 2 Pages
172-
Published: July 01, 1997
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We have grown an organic nonlinear optical crystal, 4-dimethylamino-N-methyl-4-stilbazolium tosylate(DAST) by using slow coollng method. We have changed the growth rate from 0.14mm/day to 1.2mm/day. High quality crystal could be obtained for the slowest growth rate. This crystal exhibited largest hardness because of the highly oriented molecular arrangement.
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H Maehara, I Agung, N Yoshimoto, M Yoshizawa, R Yokoyama, K Omote
Article type: Article
1997 Volume 24 Issue 2 Pages
173-
Published: July 01, 1997
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The MBE thin films of BEDT-TTF were grown at various substrate temperatures between -8O and 8O℃ The structure of the thin films werechanacterizedusing AFM and X-raydiffraction.Furthermore, the bulk single crystal structure of BEDT-TTFwas newly determined and compared with that of the thin films.
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Y Chiba, N Uenishi, Y Shimizu, T Tominari, Y Nanishi
Article type: Article
1997 Volume 24 Issue 2 Pages
174-
Published: July 01, 1997
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Excited species near a substrate during GaN growth were observed by optical emission spectroscopy(OES)Both GaN growth rate and excited Ga emission intensity were studied varying substrate bias conditions. Decrease in Gaemission intensity in high positive bias condition can be explained by suppression of Ga desorption. Thus, OES is considered to be a useful tool to understand GaN growth mechanism in ECR plastna-excited MBE.
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M Okada, Y Higaki, T Yanagi, Y Nanishi, T Ishii, S Miyazaw
Article type: Article
1997 Volume 24 Issue 2 Pages
175-
Published: July 01, 1997
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So far,there is no suitable substrate for GaN epitaxial growth with matched lattice constant and thermal expansion coefficient. LiGaO_2 has a lattice constant very close to GaN with only 0.9% mismatch. We investigated the initial stage of GaN/LiGaO_2 growth by ECR-MBE, and found different growth mode depending on LiGaO_2 surface polarity.
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Y Shunizu, T Tominari, S Hokuto, Y Chiba, Y Nanishi, A Shinoda, M Kado ...
Article type: Article
1997 Volume 24 Issue 2 Pages
176-
Published: July 01, 1997
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GaN epilayers were grown by ECR-MBE on sapphire(0001)This method enables the low temperature growth. On the other hand, cubic GaN tends to grow with the hexagonal GaN at low growth temperature. It is reported that V/III ratio has the influence on this behavior. In this report, we show for the first time that electric bias condition to the substrate also affects. structural control of GaN. The existence of cubic GaN on sapphire is recognized by RHEED,PL,and XRD.
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