Elementary processes of thin film formation by plasma method are described mainly concerning amorphous Si film formation from SiH
4 using glow discharge plasma. Elementary processes are composed of (1) primary processes involving electron impact on SiH
4 molecule and resulting dissociation, (2) secondary processes involving reaction of species within the plasma, and (3) final processes on the surface of the film such as adsorption, desorption, migration and reaction of precursors. Candidates of precursors are considered to be SiH
3 * and H
*, and hydrogen abstraction by H * radicals is also important in the film formation.
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