Carbon nitride has fascinating properties such as high hardness, high current density of field emission and so on. To obtain this material, generally CH
4 is used as a carbon source. Therefore, to make clear the effects of the reaction gas on the preparation of carbon nitride, we tried to use C
2H
4 as a carbon source instead of CH
4. However, crystalline carbon nitride has not been synthesized from the C
2H
4-N
2 reaction gas system. On the other hand, quality of CVD diamond is improved by O
2 addition for diamond growth. So, for the preparation of carbon nitride, H
2 addition is expected to be efficient as well as O
2 addition for the preparation of CVD diamond. Investigation was carried out on the preparation from the C
2H
4-N
2-H
2 reaction gas system using microwave plasma CVD.
As a result of SEM observation, crystalline deposits were observed in the condition for H
2 flow rate;3∼15 SCCM, C
2H
4 flow rate;1 SCCM and for H
2 flow rate;9∼21 SCCM, C
2H
4 flow rate;2 SCCM. Morphologies were changed from amorphous to crystalline with increasing H
2 flow rate. From AES estimation, peaks of C and N were observed in AES spectra of each sample. From XPS measurement, C-N bond and C=N bond were obtained in XPS spectra of each sample. The chemical bonding state were changed from C-N bonding to C=N bonding with increasing H
2 flow rate.
In conclusion, morphologies are changed from amorphous to crystalline, and chemical bonding state are changed from C-N bonding to C=N bonding with increasing H
2 flow rate.
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