RuO
2-SiO
2 films about 0.3-0.4μm thick were prepared from a RuO
2-SiO
2 composite target by RF sputtering in an argon atmosphere, and their crystal structure and electrical properties were investigated. The crystallinity of the sputtered RuO
2-SiO
2 films was found to depend on the volume fraction,
x, of SiO
2 and on the sputtering power density. Film crystallinity decreased with an increase in
x and with a decrease in sputtering power density. The electrical resistivity of the sputtered RuO
2-SiO
2 films varied with
x over a wide range and was divided into three regions: low (
x<0.4), transitional (0.4<
x<0.6) and high (
x>0.6). The temperature dependence of resistivity was also measured for specimens in the low resistivity region. It was found that the TCR of films prepared at low power densities was negative, while for films prepared at high power densities TCR was positive. These results can be explained by a model in which the sputtered RuO
2-SiO
2 films consist of micro-crystalline RuO
2 grains, amorphous RuO
2 and amorphous SiO
2. The amorphous RuO
2 is considered to have a negative TCR.
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