The adsorption process of hemoglobin onto glass surfaces having different hydrophobicities was studied using slab optical waveguide (SOWG) spectroscopy. Non-treated glass was employed as a hydrophilic surface. Hydrophobic glass surfaces were treated by octyltrichlorosilane (OTS) in toluene. Two distinct stages of adsorption process were observed with hydrophobic surface. The rapid attainment of the steady-state (up to 2 minutes) of the absorbance value was also noticeable when using a hydrophilic surface. The adsorption data obtained for hemoglobin on both hydrophilic and hydrophobic surfaces were examined using the Langmuir’s adsorption isotherm at extremely short time (up to 12 seconds). Results showed that the first stage of adsorption process followed the Langmuir’s adsorption isotherm.
Anodic stripping of TiAl surface was carried out in AlCl3-NaCl-KCl molten salt at 423 K as a pretreatment for the deposit formation of an Al-Cr alloy layer. The Al-Cr alloy deposit on the TiAl significantly improved the corrosion resistance against high temperature oxidation. In anodic stripping at 0.4 V vs. Al/Al3+, anodic dissolution of surface occurred non-uniformly. On the other hand, an oxide film on TiAl was completely removed by uniform anodic dissolution at 1.2 V with electricity of 1 C cm-2. An Al-Cr electroplating layer that was formed after the anodic stripping at 1.2 V, exhibited excellent oxidation resistance that was confirmed by an oxidation test at 1173 K for 24 h.
Ni-Cr oxide thin films were prepared by the magnetron sputtering with an NiO-Cr2O3 composite target and O2-added Ar sputtering gas. The electric conductivity of the films showed sharp changes from 10-11 S·m-1 to 100 S·m-1 with the addition of O2 gas from 0 vol% to 20 vol%. The existence of the cubic nickel oxide crystal was assured only in the films prepared by the O2-addition of 20 vol% or less from X-ray diffraction measurements. X-ray photoelectron spectroscopic analysis revealed that the chemical states of chromium and nickel are Cr2O3 and Ni1-xO (0<x<0.34), respectively, and the nickel deficiency maybe increased with the addition of O2 gas. These results suggested that the Ni1-xO crystalline particles were embedded in the amorphous Cr2O3 matrix. The crystallite size of Ni1-xO particles increased from 6.3 nm to 32 nm with increase in the O2-addition ratio from 0 vol% to 20 vol%. The close relationship between the electrical conductivity and the Ni1-xO particle size of the films brought us to the conclusion that the increase in conductivity was possibly attributable to the crystal growth of the conductive Ni1-xO crystallites as well as its nickel deficiency.
It was proved that the crystalline SiC thin films were grown on silicon substrates by thermal CVD process using the liquid source, tetraethylsilane. The film was investigated by XRD and TEM methods. It was clarified that the film consisted of polycrystalline 3C-SiC and included stacking faults.