In this paper, we propose a design method for a diplexer using a surface acoustic wave (SAW) filter, a multilayer ceramic filter, chip inductors, and chip capacitors. A controllable transmission zero can be created in the stopband by designing matching circuits based on the out-of-band characteristics of the SAW filter using this method. The proposed method can achieve good attenuation performance and a compact size because it does not use an additional resonator for creating the controllable transmission zero and the matching circuits are composed of only five components. A diplexer is designed for 2.4 GHz wireless systems and a global positioning system receiver using the proposed method. It is compact (8.0 mm × 8.0 mm), and the measurement results indicate good attenuation performance with the controllable transmission zero.

We design a silicon gate-all-around junctionless field-effect transistor (JLFET) using a step thickness gate oxide (GOX) by the Sentaurus technology computer-aided design simulation. We demonstrate the different gate-induced drain leakage (GIDL) mechanism of the traditional inversion-mode field-effect transistor (IMFET) and JLFET. The off leakage in the IMFET is dominated by the parasitic bipolar junction transistor effect, whereas in the JLFET it is a result of the volume conduction due to the screening effect of the accumulated holes. With the introduction of a 4 nm thick-second GOX and remaining first GOX thickness of 1 nm, the tunneling generation is reduced at the channel-drain interface, leading to a decrease in the off current of the JLFET. A thicker second GOX has the total gate capacitance of JLFETs, where a 0.3 ps improved intrinsic delay is achieved. This alleviates the capacitive load of the transistor in the circuit applications. Finally, the short-channel effects of the step thickness GOX JLFET were investigated with a total gate length from 40 nm to 6 nm. The results indicate that the step thickness GOX JLFETs perform better on the on/off ratio and drain-induced barrier lowering but exhibit a small degradation on the subthreshold swing and threshold roll-off.

In this study, we conduct guided mode analyses for chalcogenide glass channel waveguides using As₂Se₃ core and As₂S₃ lower cladding to determine their single-mode conditions across the astronomical N-band (8-12µm). The results reveal that a single-mode operation over the band can be achieved by choosing a suitable core-thickness.

Copper sulfide nanoparticles were successfully prepared by laser ablation in liquid. CuS powders in deionized water were irradiated with nanosecond-pulsed laser (Nd:YAG, SHG) to prepare nanoparticles. Prepared nanoparticles were investigated by scanning electron microscopy (SEM), dynamic light scattering (DLS) and fluorospectrometer. According to the results of SEM and DLS, the primary and secondary particle size was decreased with the increase in laser fluence of laser ablation in liquid. The ratio of Cu and S of prepared nanoparticles were not changed. The absorbance of prepared copper sulfide nanoparticles in water was increased with the increase in laser fluence.

A scheme is proposed for generation of large-amplitude short pulses using a transmission line with regularly spaced series-connected tunnel diodes (TDs). In the case where the loaded TD is unique, it is established that the leading edge of the inputted pulse moves slower than the trailing edge, when the pulse amplitude exceeds the peak voltage of the loaded TD; therefore, the pulse width is autonomously reduced through propagation in the line. In this study, we find that this property is true even when the several series-connected TDs are loaded periodically. By these mechanisms, the TD line succeeds in generating large and short pulses. Herein, we clarify the design criteria of the TD line, together with both numerical and experimental validation.

This paper theoretically presents that a terahertz (THz) oscillator using a resonant tunneling diode (RTD) and a rectangular cavity, which has previously been proposed, can radiate high output power by the impedance matching between RTD and load through metal-insulator-metal (MIM) capacitors. Based on an established equivalent-circuit model, an equation for output power has been deduced. By changing MIM capacitors, a matching point can be derived for various sizes of rectangular-cavity resonator. Simulation results show that high output power is possible by long cavity. For example, a high output power of 5 mW is expected at 1 THz.