We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO₂ cladding. We show that the device exhibits an ultrahigh quality factor (Q∼10⁵) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.

Process and temperature variations have become a serious concern for ultra-low voltage (ULV) technology. The clock generator is the essential component for the ULV very-large-scale integration (VLSI). MOSFETs that are operated in the sub-threshold region are widely applied for ULV technology. However, MOSFETs at subthreshold region have relatively high variations with process and temperature. In this paper, process and temperature variations on the clock generators have been studied. This paper presents an ultra-low voltage 2.4GHz CMOS voltage controlled oscillator with temperature and process compensation. A new all-digital auto compensated mechanism to reduce process and temperature variation without any laser trimming is proposed. With the compensated circuit, the VCO frequency-drift is 16.6 times the improvements of the uncompensated one as temperature changes. Furthermore, it also provides low jitter performance.

This work develops a third-order multibit switched-current (SI) delta-sigma modulator (DSM) with a four-bit switched-capacitor (SC) flash analog-to-digital converter (ADC) and an incremental data weighted averaging circuit (IDWA), which is fabricated using 0.18µm 1P6M CMOS technology. In the proposed DSM, a 4-bit SC flash ADC is used to improve its resolution, and an IDWA is used to reduce the nonlinearity of digital-to-analog converter (DAC) by moving the quantization noise out of the signal band by first-order noise shaping. Additionally, the proposed differential sample-and-hold circuit (SH) exhibits low input impedance with feedback and width-length adjustment in the SI feedback memory cell (FMC) to increase the conversion rate. A coupled differential replicate (CDR) common-mode feedforward circuit (CMFF) is used to compensate for the mirror error that is caused by the current mirror. Measurements indicate that the signal-to-noise ratio (SNR), dynamic range (DR), effective number of bits (ENOB), power consumption, and chip area are 64.1 dB, 64.4 dB, 10.36 bits, 18.82 mW, and 0.45 × 0.67 mm² (without I/O pad), respectively, with a bandwidth of 20 kHz, an oversampling ratio (OSR) of 256, a sampling frequency of 10.24 MHz, and a supply voltage of 1.8 V.