We have developed a process for the fabrication of high-quality Nb/AlOx/Nb tunnel junctions with small area and high current densities for the heterodyne mixers at millimeter and submillimeter wavelengths. Their dc I-V curves are numerically studied, including the broadening of quasiparticle density of states resulting from the existence of an imaginary part of the gap energy of Nb. We have found both experimentally and numerically that the subgap current is strongly dependent on bias voltage at temperatures below 4.2K unlike the prediction of the BCS tunneling theory. It is shown that calculated dc I-V curves taking into account the complex number of the gap energy agree well with those of Nb/AlOx/Nb junctions measured at temperatures from 0.4 to 4.2K. We have successfully built receivers at millimeter and submillimeter wavelengths with the noise temperature as low as 4 times the quantum photon noise, employing those high-quality Nb/AlOx/Nb junctions. Those low-noise receivers are to be installed in the ALMA (Atacama Large Millimeter/Submillimeter Array) telescope and they are going into series production now.

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524,288 NbN-based Josephson junctions were integrated to produce a programmable Josephson voltage standard (PJVS) on a die of 15mm × 15mm, and the PJVS circuit was cooled to 10K using a cryocooler and operated with a current margin of about 1.0mA. Although an output voltage of 10V was required for a voltage standard, the circuit was designed to generate the maximum output voltage of 17V because it was difficult to avoid a reduction of the output voltage due to defects. Although a perfect chip without any defect was rarely fabricated, the high voltage chip that generated at least 10V was fabricated with the fabrication yield of larger than 30%. The fabrication yield was also improved by optimizing the film growth conditions to reduce the film stress and the number of particles. Applications for a secondary voltage standard and an ac Josephson voltage standard are also described.

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Recent developments of electronic devices containing Josephson junctions (JJ) with high-T_c superconductors (HTS) are reported. In particular, the fabrication process and the properties of superconducting quantum interference devices (SQUIDs) with a multilayer structure and ramp-edge-type JJs are described. The JJs were fabricated by re-crystallization of an artificially deposited Cu-poor precursory layer. The formation mechanism of the junction barrier is discussed. We have fabricated various types of gradiometers and magnetometers. They have been actually utilized for several application systems, such as a non-destructive evaluation (NDE) system for deep-lying defects in a metallic plate and a reel-to-reel testing system for striated HTS-coated conductors.

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The present status of superconducting terahertz emitter using the intrinsic Josephson junctions in high-T_c superconductor Bi₂Sr₂CaCu₂O_8+δ is reviewed. Fabrication methods of the emitting device, electrical and optical characteristics of them, synchronizing operation of two emitters and an example of applications to the terahertz imaging will be discussed. After the description of fabrication techniques by an Argon ion milling with photolithography or metal masks and by a focused ion beam, optical properties of radiation spectra, the line width, polarization and the spatial distribution of emission are presented with some discussion on the operation mechanism. For electrical properties, reversible and irreversible operations at high and low electrical currents, respectively, and electrical modulation of the radiation intensity for terahertz imaging are presented.

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Superconducting integrated circuits should be operated at low temperature below a half of their critical temperatures. Thermal heat from a bias resistor could rise the temperature in Josephson junctions, and would reduce their critical currents. In this study, we estimate the temperature in a Josephson junction heated by a bias resistor at the bath temperature of 4.2K, and introduce a parameter β that connects the thermal heat from a bias resistor and the temperature elevation of a Josephson junction. By using β, the temperature in the Josephson junction can be estimated as functions of the current through the resistor.

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A generation effect of higher harmonics for an externally applied signal in a photoconductive (PC) terahertz (THz)-wave emitter has been found. This effect is applicable to accurately measuring for frequencies of THz waves. This paper describes reasons why higher harmonics are generated in a PC device. The dependence of the photoconductance on the applied voltage in the PC device consists of a flat range and a negative slant range, and one sharply bending point is then formed at the boundary between the flat and slant ranges. When the PC device is irradiated by two laser beams with slightly different optical frequencies, the photoconductance is strongly modulated at the optical beat frequency in the THz region by photomixing the two laser beams. As a result, three bending points are formed in the average photoconductance (introduced as the average of the temporal photoconductance varying at the THz frequency). The slants comprised of the three bending points are different from each other. When the variation range of the applied voltage driven by the signal input on the biased voltage covers the voltage of one of the bending points, the photoconductance (or the average photoconductance in optical beating) varies along the different two slopes, the resultant temporal photocurrent is largely distorted, and then the harmonics of the signal input are generated in the photocurrent. The following features are clarified: (1) the harmonics of the signal input are generated by appropriately adjusting the bias voltage and the amplitude of the signal input, regardless of the presence/absence of optical beating; (2) the efficiency of the harmonic generation is about 10^-4-10^-5; and (3) the harmonics over 35th order with almost flat amplitudes (-3.8dB/octave) are generated.

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We present an analytical nonlinear adiabatic theory of the microwave electron device that we call the Autophase Microwave Tube (AMT). In contrast to the well-known Traveling Wave Tube (TWT), the AMT exploits a highly efficient non-synchronous beam-wave interaction for the amplification (or generation) of the HF electromagnetic waves, and, differently from klystron and such hybrid devices as twystron, it employs a continuous beam-wave interaction. Because of these distinctive features, the AMT presents a special class of microwave electron devices, which feature very high electronic efficiency (which tends to 100%) and large bandwidth. Here, we develop the theory that allows one to find the profiles of static longitudinal electric or magnetic field (or both) over the device length, which yield negligible de-bunching together with highly efficient amplification (generation) of the HF electromagnetic wave. The analysis of electron motion in the bunch is performed by means of Lyapunov stability theory. The numerical example illustrates the possibility of achieving the electronic efficiency of AMT as high as 92%. We compare different autophase regimes in the AMT and show that the profiling of the longitudinal static magnetic focusing field in the helix AMT with the non-azimuthally symmetric wave has many advantages with respect to other regimes.

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In this paper, a novel microstrip hairpin-line bandpass filter which employs a modified Minkowski fractal shape is proposed. Although conventional hairpin-line filters are popular for RF front ends, they suffer from undesired spurious responses located at the second harmonic, which causes asymmetry in the upper skirt band. By proper design, the second harmonic of fractal filters can be significantly suppressed through the use of fractal shape. To validate this novel geometry, the proposed filters are fabricated and measured. Simulated results are in good agreement with measured results.

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This paper describes a method to design a predistorter (PD) for a GaN-FET power amplifier (PA) by using nonlinear parameters extracted from measured IMD which has asymmetrical peaks peculiar to a memory effect with a second-order lag. While, computationally efficient equations have been reported by C. Rey et al. for the memory effect with a first-order lag. Their equations are extended to be applicable to the memory effect with the second-order lag. The extension provides a recursive algorithm for cancellation signals of the PD each of which updating is made by using signals in only two sampling points. The algorithm is equivalent to a memory depth of two in computational efficiency. The required times for multiplications and additions are counted for the updating of all the cancellation signals and it is confirmed that the algorithm reduces computational intensity lower than half of a memory polynomial in recent papers. A computer simulation has clarified that the PD improves the adjacent channel leakage power ratio (ACLR) of OFDM signals with several hundred subcarriers corresponding to 4G mobile radio communications. It has been confirmed that a fifth-order PD is effective up to a higher power level close to 1dB compression. The improvement of error vector magnitude (EVM) by the PD is also simulated for OFDM signals of which the subcarrier channels are modulated by 16 QAM.

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Axial and transverse magnetic fields are widely used in many kinds of switches to decrease the arc erosion. In this paper, the influence of these two kinds of magnetic fields on the arc phase transition was studied particularly for AgSnO₂ contacts breaking a 28V/25A circuit. The experiments were carried out under resistive and inductive loads in an atmospheric environment. The relationships between flux densities ranging from 0 to 200mT and the arc duration were obtained. It was found that the transverse magnetic field was more efficient in balancing the arc phases and decreasing the arc erosion. The results can be used to guide the design of arc extinguishment systems in DC high power relays.

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We estimated the transit time of GaInAs/AlAs double-barrier resonant tunneling diodes (RTDs) oscillating at 0.6-1THz. The RTDs have graded emitter structures and thin barriers, and are integrated with planar slot antennas for the oscillation. The transit time across the collector depletion region was estimated from measured results of the dependence of oscillation frequency on RTD mesa area. The estimated transit time was slightly reduced with the introduction of the graded emitter, probably due to reduction of the electron transition between Γ and L bands resulted from the low electric field in the collector depletion region.

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A novel half mode elliptic substrate integrated waveguide (HMESIW) filter with bypass coupling substrate integrated circular cavity (BCSICC) is proposed and fabricated by using standard PCB technology. Due to the use of an elliptical waveguide cavity, the tolerance sensitivity of the filter is reduced. The filter optimizing procedure is therefore simplified. The measured results demonstrate its superior performance in tolerance sensitivity and show good agreements with the simulation results.

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