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佐藤 正英, 上羽 牧夫
原稿種別: 本文
1999 年 26 巻 2 号 p.
45-
発行日: 1999/07/01
公開日: 2017/05/31
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We study the growth law of step bunches induced by the drift of adatoms with evaporation taken into account. We use the step now model and carry out numerical integration of the step velocity. When the drift velocity is large, the average terrace size grows as t^β with βap1/2 similary to the case without evaporation. When the drift velocity is small, the average terrace size grows with βsmaller than 1/2 in the initial stage and saturates in a late stage.
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松本 喜以子, 入澤 寿美
原稿種別: 本文
1999 年 26 巻 2 号 p.
46-
発行日: 1999/07/01
公開日: 2017/05/31
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The stable cluster size and territory for Volmer-Weber growth mechanism are investigated by Monte Carlo simulation. It is shown that the chemical potential dependence for the cluster size shows a different tendency by the surface diffusion treatments.
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阿久津 典子, 阿久津 泰弘
原稿種別: 本文
1999 年 26 巻 2 号 p.
47-
発行日: 1999/07/01
公開日: 2017/05/31
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We study the adatom system on (111) surface of diamond crystal structure. As a model of the adatom system, we consider two-dimensional hexagonal lattice gas model with excluded volume restriction among adatoms sitting on T_4 sites and H_3 sites. We calculate thermodynamical quantities of the lattice gas models in disordered phase by product-wave-function renormalization group (PWFRG) method. We apply the results to Si (111) surface.
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木下 尚幸, 阿久津 典子, 阿久津 泰弘
原稿種別: 本文
1999 年 26 巻 2 号 p.
48-
発行日: 1999/07/01
公開日: 2017/05/31
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We made a Monte Carlo calculation of the two-dimensional hexagonal lattice gas model with excluded volume restriction among adatoms sitting on T_4 sites and H_3 sites. We compare the result with the one obtained by numerical renormalization group method.
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伊藤 智徳, 白石 賢二, 田口 明仁
原稿種別: 本文
1999 年 26 巻 2 号 p.
49-50
発行日: 1999/07/01
公開日: 2017/05/31
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Adsorption behavior on GaAs surfaces is theoretically investigated in conjunction with thin film growth Simulation. Based on the ab initio calculations. Electron counting Monte Carlo (ECMC) simulation successfully predicts adsorption behavior of Ga, As and Si on various GaAs surfaces including (001) and (111) A. This implies that quantum mechanical approach is indispensable for clarifying adsorption behavior on semiconductor surfaces.
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佐藤 正英, 上羽 牧夫
原稿種別: 本文
1999 年 26 巻 2 号 p.
51-
発行日: 1999/07/01
公開日: 2017/05/31
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We study the behavior of an unstable vicinal face formed by the drift of adatoms. When the drift is in the down-hill direction and exceeds critical strength, the vicinal face is linearly unstable to long wavelength fluctuations. When the vicinal face is unstable only to the fluctuations perpendicular to the steps, ripples appear in the initial stage. The term that breaks the symmetry of the system suppresses the fluctuation along the step and produces a bunch-like structure in a late stage.
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阿久津 典子, 阿久津 泰弘, 山本 隆夫
原稿種別: 本文
1999 年 26 巻 2 号 p.
52-
発行日: 1999/07/01
公開日: 2017/05/31
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We study vicinal surface of Ising coupled restricted solid-on-solid (RSOS) model by product-wavefunction renormalization group method. We regard the Ising system represents a monolayer lattice gas system of adsorption. We obtained step smoothening transition where step stiffness diverges.
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山本 隆夫, 阿久津 泰弘, 阿久津 典子
原稿種別: 本文
1999 年 26 巻 2 号 p.
53-
発行日: 1999/07/01
公開日: 2017/05/31
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Essential statistical-mechanical properties of vicinal surfaces are described by the "universal" free-Fermion picture. In this picture, the step smoothening transition is regarded as a change of the dispersion relation of the Fermion. On the basis of this idea, we analyze the step smoothening transition.
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阿久津 泰弘, 日永田 泰啓, 奥西 巧一, 阿久津 典子, 山本 隆夫
原稿種別: 本文
1999 年 26 巻 2 号 p.
54-
発行日: 1999/07/01
公開日: 2017/05/31
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Mechanism of the step smoothening transition is discussed based on the equivalence between the vicinal surface and the magnetization process of one-dimensional Quantum antiferromagnets.
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山本 隆夫, 阿久津 泰弘, 阿久津 典子
原稿種別: 本文
1999 年 26 巻 2 号 p.
55-
発行日: 1999/07/01
公開日: 2017/05/31
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We introduce the Ginzburg-Landau-Langevin (GLL) equation with the thermal noise different from the conventional white noise, which is called the modified thermal-noise Ginzburg-Landau-Langevin (MTN-GLL) equation. By the "new" GLL equation, we analyze the fluctuation properties of an isolated step on growing surface and derive the "distribution function" of the step. 0n the basis of the distribution function, we derive the MTN-GLL equation for many-step system. We compare the analytical result form the equation with a Monte-Carlo calculation.
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齋藤 幸夫, 庄谷 卓也
原稿種別: 本文
1999 年 26 巻 2 号 p.
56-
発行日: 1999/07/01
公開日: 2017/05/31
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The elastic deformation of the substrate induces a repulsive interaction between adsorbed atoms. In a model of one- dimensional adsorbate with submonolayer coverage, the devil's staircase as well as clustering is obtained by varying the strength of the short-range chemical bonding and the coverage.
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松本 尚子, 北村 雅夫
原稿種別: 本文
1999 年 26 巻 2 号 p.
57-
発行日: 1999/07/01
公開日: 2017/05/31
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Distribution coefficients between liquid and binary ideal solid solution during growth from dilute solution at steady state conditions are investigated in acount with kink kinetics.
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日永田 泰啓
原稿種別: 本文
1999 年 26 巻 2 号 p.
58-
発行日: 1999/07/01
公開日: 2017/05/31
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The asymmetric exclusion process (ASEP) model, by which crystal growth phenomena are described. Is studied using the numerical renormalization method (the density matrix renormalization group (DMRG) method). We will present, for example, the density profile and the decay time of the model in which we include the evaporation-deposition process together with the hopping process.
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上羽 牧夫, 渡邉 克博, 一宮 彪彦, 林 和彦
原稿種別: 本文
1999 年 26 巻 2 号 p.
59-
発行日: 1999/07/01
公開日: 2017/05/31
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We study the Decay of a cone-shaped island on a facet with the use of a simple model consisting of circular steps with elastic repulsion. Short steps near the center shrink layer by layer and an enlarging facet appear at the top. At some stage outer steps form a bunch due to the repulsion and shrink together.
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横山 悦郎
原稿種別: 本文
1999 年 26 巻 2 号 p.
60-
発行日: 1999/07/01
公開日: 2017/05/31
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A model is formaulated to explain the appearance of pattern with periodical structures during growth of crystals under constant external conditions, such as temperature, concentration and convection. The model takes into account a hysteresis behavior of surface kinetic processes at a rate determined by the excess concentration of the surface from the local equilibrium. Self-oscillatory growth occurs because of the coupling of surface kinetics to the transport of molecules under constant growth conditions.
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蔵岡 道弘, 大鉢 忠
原稿種別: 本文
1999 年 26 巻 2 号 p.
61-
発行日: 1999/07/01
公開日: 2017/05/31
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Induction time of electrical nucleation was compared with theoretical one. The electrical nucleation, which occurs near the silver electrode in supercooled concentrated sodium acetate trihydrate solution, is explained by Kashchiev's theory instead of Isard's theory.
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大鉢 忠, 吉田 和己, 堀 良明, 西 剛広
原稿種別: 本文
1999 年 26 巻 2 号 p.
62-
発行日: 1999/07/01
公開日: 2017/05/31
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Equilibrium crystal shape (ECS) of the high temperature chase of fcc Ag_2S was studied by a scanning electron microscope. Orientation relationship between small crystals and the matrix of Ag is important lo determine the obtained ECS. Octahedron, platelet sphere ECSs were observed.
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神代 正大, 吉本 則之, 鈴木 一孝, 古澤 正人
原稿種別: 本文
1999 年 26 巻 2 号 p.
63-
発行日: 1999/07/01
公開日: 2017/05/31
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Self-assembled monolayers of dibutylamino-triazine-ditiol were formed on Au (111) by wet and dry processes. The structure of monolayers was investigated using STM, AFM and XPS STM images revealed that Dibutylamino-triazine-ditiol (DB) molecules spontaneously aggregate on gold surface. XPS showed that the binding energy between DB and gold changed with changing substrate temperature in dry process.
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横山 悦郎, Robert F. Sekerka, 古川 義純
原稿種別: 本文
1999 年 26 巻 2 号 p.
64-
発行日: 1999/07/01
公開日: 2017/05/31
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砂川 一郎, 安田 俊一, 福島 秀明
原稿種別: 本文
1999 年 26 巻 2 号 p.
65-
発行日: 1999/07/01
公開日: 2017/05/31
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By means of X-ray topography and cathodeluminescence tomography, three brilliant cut diamonds were investigated. It was demonstrated that the growth of Major part of two brilliants cut from the same rough took place on a seed diamond cuboid formed eleswhere and transported to the growth site. From the Morphological characteristics of the seed, it was argued that the seed was formed in high pressure metamorphic rocks in the subduction zone, and transported into an ultraiafic magma in the Mantle.
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小川 直久
原稿種別: 本文
1999 年 26 巻 2 号 p.
66-
発行日: 1999/07/01
公開日: 2017/05/31
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氷柱の太さの振動波長が8mmを中心とした正規分布をなしている事が実験的に知られている。一般にこのような結晶化に由来する不安定性はMullins-Sekerka理論で理解されるが、この系に適用してみるとMS理論ではこのような波長の揺らぎを再現できないことがわかる。本論では、MS理論と表面を流れる液膜流に生じる表面波との相互作用を通じて、特有の波長の揺らぎが生じることを示す。
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森 徹, D.K. Aswal, 小山 忠信, 早川 泰弘, 熊川 征司
原稿種別: 本文
1999 年 26 巻 2 号 p.
67-
発行日: 1999/07/01
公開日: 2017/05/31
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The pseudo-binary Y/NdBa_2Cu_3O_x-Ba_3Cu_<10>O_<13> phase diagrams and the crystallization of Y/NdBa_2Cu_3O_x have been in situ observed using high-temperature optical microscope in air. Dendritic growth occurred at the cooling rate of 5℃/min, but plate-like crystals grew by holding the temperature at 993℃. Y-rich and Nd-rich crystals were grown at the higher and lower temperature regions in the horizontal furnace, respectively.
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早川 泰弘, D.K. Aswal, 新村 光世, 小山 忠信, 熊川 征司
原稿種別: 本文
1999 年 26 巻 2 号 p.
68-
発行日: 1999/07/01
公開日: 2017/05/31
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The pseudo-binary NdBa_2Cu_3O_x-Ba_3Cu_<10>O_<13> phase diagrams and the crystallization of NdBa_2Cu_3O_x have been in situ observed using high-temperature optical microscope under three different oxygen atmospheres namely 1%, 0.1% and 0.0097% oxygen mixed in argon gas. The liquidus line becomes narrower both in composition and temperature with decreasing oxygen pressure. The crystallization temperature of NdBa_2Cu_3O_x was found to decrease logarithmically with decreasing oxygen content in the atmosphere.
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早川 泰弘, D.K. Aswal, 新村 光世, 小山 忠信, 熊川 征司
原稿種別: 本文
1999 年 26 巻 2 号 p.
69-
発行日: 1999/07/01
公開日: 2017/05/31
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The growth rate of Yba_2Cu_3O_x single crystal along [100]/[010] directions has been measured in situ using high-temperature optical microscope. The results showed that the growth rate of Yba_2Cu_3O_x crystals is intimately related with the dissolution of Y_2BaCuO_5 particles in the liquid.
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長谷川 正, 武居 文彦
原稿種別: 本文
1999 年 26 巻 2 号 p.
70-
発行日: 1999/07/01
公開日: 2017/05/31
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High quality single crystals of Tl-based cuprate superconductors arc of profound importance to clarifying intrinsic physical properties of the high-T_c cuprates. We have succeeded to grow single crystals of the Tl-2201 superconductor with extremely high quality using a self-flux method. The maximum value of resistivity ratio R (RT)/R(T_c) of the as-grown crystals is 18.3. It is found that a closed atmosphere method using a gold crucible is useful to grow the high quality single crystals.
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吉川 彰, 長谷川 健治, S.D. Durbin, B.M. Epelbaun, 福田 承生, 和久 芳春
原稿種別: 本文
1999 年 26 巻 2 号 p.
71-
発行日: 1999/07/01
公開日: 2017/05/31
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From aerospace application and gas generator application, strength material which can be used more than 1500℃ is required. Now, sapphire/YAG eutectic composites are regarded as candidate. In this study, the fiber growth of the composite using micro pulling down (μ-PD) method were carried out and the preferred growth orientation was discussed.
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庄内 智博, 樋口 幹雄, 小平 紘平
原稿種別: 本文
1999 年 26 巻 2 号 p.
72-
発行日: 1999/07/01
公開日: 2017/05/31
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Nd: YVO_4 single crystals with high Nd-contents were successfully grown by the floating zone method. The growth conditions for growing macroscopic-defect free crystals were investigated with respect to Nd-content and growth rates. No cellular growth was observed in the crystal with 8.5 at% Nd even at a growth rate of 25 mm/h.
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関島 雄徳, 藤井 高志, 脇野 喜久男, 岡田 正勝
原稿種別: 本文
1999 年 26 巻 2 号 p.
73-
発行日: 1999/07/01
公開日: 2017/05/31
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We have been successfully grown the fibrous tetragonal-BaTiO_3 crystals using Traveling Solvent Floating Zone (TSFZ) method. In this growth, the TiO_2-rich self-flux was chosen to the solvent. The obtained crystal is about 0.8mm in diameter and 30mm in length, and shows the ferroelectric hysteresis at room temperature without after heat treatment.
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賈 暁鵬, 宮崎 昭光, 木村 秀夫
原稿種別: 本文
1999 年 26 巻 2 号 p.
74-
発行日: 1999/07/01
公開日: 2017/05/31
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A containerless processing for crystallization from supercooled melt was carried out by floating zone method on the ground condition. Ba (B_<0.9>Al_<0.1>)_2O_4 was used as a sample. The crystallization was started from the center of floating molten zone.
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宮崎 昭光, 木村 秀夫, 賈 暁鵬
原稿種別: 本文
1999 年 26 巻 2 号 p.
75-
発行日: 1999/07/01
公開日: 2017/05/31
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Crystallization of Ba (B_<0.9>Al_<0.1>)_2O_4 from supercooled pendant drop were investigated on a viewpoint of a phase formation. Ba (B_<0.9>Al_<0.1>)_2O_4 has a low temperature phase and a high temperature phase in a solid. The phase formation was expected to depend on the crystallization temperature.
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元島 仁志, 尾沢 貴史, 溝田 孝夫, 霜村 攻
原稿種別: 本文
1999 年 26 巻 2 号 p.
76-
発行日: 1999/07/01
公開日: 2017/05/31
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We investigated basic characteristics of growth of Ba (B_<1-X>Al_x)_2O_4 single crystals using NaCl and Na_2O as the solvent. And then faceted Ba (B_<1-X>Al_x)_2O_4 single crystals were grown by SSSG method based on the data.
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永堀 淳司, 関和 秀幸, 冨長 英樹, 蝦名 義昭
原稿種別: 本文
1999 年 26 巻 2 号 p.
77-
発行日: 1999/07/01
公開日: 2017/05/31
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Large crystals of GdYCOB (Gd_XY_<1-X>Ca_4O(BO_3)_3)(0.20<x<0.35), have been grown by the Czochralski method. Crystal growth condition was optimized. Typical size of crystals is 40mm in diameter and 50mm in length. Suitable rate of crystal rotation made the interface of crystal growth flat and reduced optically inhomogeneous core.
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曽根 雅代, 井上 哲夫
原稿種別: 本文
1999 年 26 巻 2 号 p.
78-
発行日: 1999/07/01
公開日: 2017/05/31
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The effects of impurity (sodium acetate, 1mol.%) upon the habit changes of NaBrO_3 crystals grown from aqueous solution have been investigated. The results were compared with those in the acetic add doping.
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藤岡 加奈, 中塚 正大
原稿種別: 本文
1999 年 26 巻 2 号 p.
79-
発行日: 1999/07/01
公開日: 2017/05/31
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Improvement of the optical quality of the crystal requires that the growth rate is controlled constant. The dependence of the growth rate upon the temperature and supersaturation of the solution was studied under higher level of supersaturation. The results were added to the data base for computer-controlled growth system consisted with the relationship between the concentration, temperature and electric conductivity.
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金子 聰, 宮川 宜明, 浅野 元彦
原稿種別: 本文
1999 年 26 巻 2 号 p.
80-
発行日: 1999/07/01
公開日: 2017/05/31
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La-doped Bi2201 single crystals were grown by the floating zone method, where the growth rate was adjusted as 0.3mm/h and 0.5mm/h. EPMA analysis was performed on the as-grown crystals to investigate La distribution along the growth direction. As results. There were no La-segregation in the single crystal which was grown with 0.3mm/h.
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古屋 博之, 中尾日 六士, 山田 逸成, 村瀬 幸紀, 吉村 政志, 森 勇介, 佐々木 孝友
原稿種別: 本文
1999 年 26 巻 2 号 p.
81-
発行日: 1999/07/01
公開日: 2017/05/31
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We have developed Gd_<0.28>Y_<0.72>Ca_4O(BO_3)_3(Gd_xY_<1-X>OB) crystal in order to control optical birefringence. And this crystal is possible to generate (θ,φ)=(90°,90°) phase matched third harmonic of 1064nm light. Furthermore we have grown and characterized La_xGd_<1-X>COB crystal for noncrytical phase-matching of 800nm band IR lasers.
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A. Durand, K. Lebbou, V. I. Chani, 吉川 彰, 福田 承生
原稿種別: Article
1999 年 26 巻 2 号 p.
82-
発行日: 1999/07/01
公開日: 2017/05/31
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安斎 裕, 山崎 貴史, 山岸 喜代志
原稿種別: 本文
1999 年 26 巻 2 号 p.
83-
発行日: 1999/07/01
公開日: 2017/05/31
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Forsterite (Mg_2SiO_4) single crystals containing 0-0.1wt% Cr were grown by the Czochralski method. Defect structures were investigated by X-ray topography. Dislocation density was high at center region.
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樋口 幹雄, 小平 紘平, 中山 享
原稿種別: 本文
1999 年 26 巻 2 号 p.
84-
発行日: 1999/07/01
公開日: 2017/05/31
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Apatite-type neodymium silicate single crystals with various compositions were grown by the floating zone method and their oxide ionic conductivity was measured. Based on macroscopic defects and conductivities of the crystals. The congruent composition was estimated to be around Nd_<9.20>(SiO_4)_6O_<1.8>, which is different from the stoichiometric one.
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小平 紘平, 樋口 幹雄, 阿部 一智, 毎田 繁, 北川 泰三, [トギ] 琢己, 上田 隆全
原稿種別: 本文
1999 年 26 巻 2 号 p.
85-
発行日: 1999/07/01
公開日: 2017/05/31
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A new melt growth technic which we call a pulling-down method has been established by the authors. The feature of this method is to grow long size crystals having the same diameter with a crucible by continuously supplying powder. Single crystals can be easily grown by solidifying the melt flowing out of a hole at a bottom of the crucible. Crack and core free single crystals were obtained for Li_2B_4O_7. LiNbO_3Bi_<12>SiO_<20> and TiO_2.
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羽深 等, 大塚 徹, 曲 偉蜂, 島田 学, 奥山 喜久夫
原稿種別: 本文
1999 年 26 巻 2 号 p.
86-
発行日: 1999/07/01
公開日: 2017/05/31
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The numerical calculation model for boron incorporation in silicon epitaxial film is discussed, for the first time, accounting for the transport phenomena of B_2H_6, SiHCI_3,HCl and H_2 gases in addition to those of heat and flow in the horizontal cold-wall single-wafer epitaxial reactor.
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Makoto Itoh
原稿種別: Article
1999 年 26 巻 2 号 p.
87-
発行日: 1999/07/01
公開日: 2017/05/31
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We will report our discovery of the structural transition of the islands which appear in the very early stages of GaAs (001) homoepitaxy.
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浅井 和宏, 高潔 明, P.O. Vaccaro, 藤田 和久, 大鉢 忠
原稿種別: 本文
1999 年 26 巻 2 号 p.
88-
発行日: 1999/07/01
公開日: 2017/05/31
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Ga desorption was changed by Arsenic vapor pressure with constant incoming Ga flux. Peak energy was transferred to high energy as As pressure was risen at 520℃. At low substrate temperature. Ga sticking coefficient was reduced under Arsenic-rich condition. Ga desorption was also reduced with high index at 520℃.
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口野 啓史, 中井 健二, 建内 満, 馮 潔明, P.O. Vaccaro, 藤田 和久, 大鉢 忠
原稿種別: 本文
1999 年 26 巻 2 号 p.
89-
発行日: 1999/07/01
公開日: 2017/05/31
ジャーナル
フリー
Characteristic of the lateral wet oxidation of AlAs layer was changed by the MBE growth condition of AlAs layer. Diffusion controlled oxidation process changes to interface reaction contorolled one when the As/Al flux ratio becomes more than 8.5.
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巖 崢, 成塚 重弥, 西永 頌
原稿種別: 本文
1999 年 26 巻 2 号 p.
90-
発行日: 1999/07/01
公開日: 2017/05/31
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The process of the lateral coalescence in the MCE of InP by LPE was studied. We suggest two modes of the lateral coalescence: the "one-zipper" and the "two-zipper" growth. Dislocations are usually found in the coalescent region when the growth is in the "two-zipper" mode, however, when the growth changes to the "one-zipper" mode, even the coalescent region becomes dislocation-free.
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巖 崢, 成塚 重弥, 西永 頌
原稿種別: 本文
1999 年 26 巻 2 号 p.
91-
発行日: 1999/07/01
公開日: 2017/05/31
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We have carried out a theoretical approach for the understanding of the processes involving in the microchannel epitaxy (MCE). By numerically solving a two-dimensional equation for diffusion, concentration profile as a function of growth time in the growing solution can be determined. Based on this profile. A simulation of the MCE has been conducted. The W/T ratio derived from the simulation has a similar dependence with those obtained from the experiment.
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成塚 重弥, 巖 崢, 西永 頌
原稿種別: 本文
1999 年 26 巻 2 号 p.
92-
発行日: 1999/07/01
公開日: 2017/05/31
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In InP Microchannel Epitaxy (MCE) by liquid chase epitaxy (LPE), Sn:In=3:l (in weight) solution is used to achieve n-type doping. As the solubility of P in Sn is very high, the growth condition should be optimized by changing the size of the upper crystal. As the result, a wide dislocation-free n-type InP MCE layer, whose width was as large as 210 μn, was obtained on a Si substrate. The optical property of a MQW structure grown on the MCE layer was also excellent.
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飯田 晋, 早川 泰弘, 小山 忠信, 熊川 征司
原稿種別: 本文
1999 年 26 巻 2 号 p.
93-
発行日: 1999/07/01
公開日: 2017/05/31
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In order to investigate the formation mechanism of the bridge, InGaAs layer were grown on line-seed substrate alined with <110>. When InGaAs grew laterally with {111} B plane appeared at growth front, InGaAs formed a bridge. This results indicated that Berg effect greatly affected on the formation mechanism of the bridge.
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鍋谷 暢一, 金丸 美佐登, 江川 哲也, 加藤 孝正, 松本 俊
原稿種別: 本文
1999 年 26 巻 2 号 p.
94-
発行日: 1999/07/01
公開日: 2017/05/31
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The step structures formed on ZnSe surface growing on GaAs vicinal substrates were investigated by in-situ reflection high energy electron diffraction (RHEED) observation. The superposition of two kinds of rods originating from terrace and atomic array were dearly observed. The RHEED patterns revealed the uniformity of step structure.
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寒川 義裕, 桑野 範之, 沖 憲典
原稿種別: 本文
1999 年 26 巻 2 号 p.
95-
発行日: 1999/07/01
公開日: 2017/05/31
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We studied the formation mechanism of a CuAu-I type ordered structure m an InGaAs grown on a vicinal (110) InP substrate with. Two-monolayer steps on the growth surface. The results of empirical interatomic potential calculations have shown that In and Ga adatoms tend to occupy the upper and the lower sites, respectively, at a kink of two-monolayer steps on the growth surface to form alternate-stacking of Ga- and In-rich (110) planes; that is, a CuAu-I type ordered structure.
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