We have developed through-hole interconnections in silicon substrates, which can be applied for Micro Electro-Mechanical System (MEMS) devices or high-density packaging. The through-holes were formed by Deep Reactive Ion Etching (DRIE) and filled with Au-Sn solder by Molten Metal Suction Method (MMSM). The MMSM we have proposed is an unique and distinctive technology to fill high aspect ratio through-holes with conductive metal. We could make more than 18,000 conductive through-holes, 30μm in diameter and 300μm in depth, in a 4 inch silicon wafer by the MMSM. We report principle, filling process and optimization of the MMSM. We also present structure, fabrication processes and electrical characteristics of the conductive through-holes.
抄録全体を表示