This paper presents the quantitative analysis and influence of CO
2 dissolved in TMAH for silicon etching. The etching rate on the (100) plane increases at first and then decreases with the increase of CO
2 concentration. The etching rate on the (110) plane decreases monotonously with the increase of CO
2 concentration. Although the etching rate on the (110) plane is higher than that on the (100) plane at ordinary conditions, this relationship is reversed at a certain quantity of CO
2 dissolution. The etch-stop appears at higher concentration of CO
2 dissolution. It was confirmed that changes of the silicon etching characteristics are caused by concentration of carbonate anions. The CO
2 dissolution has influence on the (100) plane and no influence on the (110) plane.
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