電気学会論文誌E(センサ・マイクロマシン部門誌)
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
128 巻, 8 号
選択された号の論文の4件中1~4を表示しています
特集:ユビキタス社会のためのナノマテリアル・プロセス技術
特集論文
  • Kun'ichi Miyazawa, Cherry Ringor, Kohei Nakamura, Masaru Tachibana, Ka ...
    2008 年128 巻8 号 p. 317-320
    発行日: 2008/08/01
    公開日: 2008/08/01
    ジャーナル フリー
    The structural change of C60 nanotubes (C60NTs) by heating in vacuum was investigated using thermo-gravimetric analysis (TGA), transmission electron microscopy (TEM) and Raman spectroscopy. The C60NTs were prepared by use of a pyridine solution saturated with C60 and isopropyl alcohol (IPA). A weight loss of about 4 % in the C60NTs dried at room temperature was observed by heating up to 400°C in a N2 atmosphere, and the C60NTs started to decompose from about 600°C. The Ag(2) peak of as-prepared C60NTs shows a Raman shift indicating one-dimensionally polymerized C60, while the C60NTs heated at 100°C ∼ 500°C in vacuum show Ag(2) peaks characteristic of van der Waals C60 crystals, suggesting a change of bonding state of C60 molecules by heat treatment. TEM observations show that the crystallinity and surface morphology of C60NTs are degraded by high-temperature heat treatment in vacuum.
  • Mami Watanabe, Kun'ichi Miyazawa, Kenichi Kojima, Masaru Tachibana
    2008 年128 巻8 号 p. 321-324
    発行日: 2008/08/01
    公開日: 2008/08/01
    ジャーナル フリー
    The mechanical properties of C60 nanowhiskers (C60NWs) grown in a solution by a liquid-liquid interfatical precipitation method were investigated by a bending method. C60NWs in the solution exhibited large elastic deformation where they recovered for large bending with a curvature of 290 μm. On the other hand, C60NWs in air were broken even for small bending with only a 650 μm curvature. From the analysis of the bending, the yield stress or breaking stress for C60NWs in air is estimated to be 7.7 MPa, that is larger by one order compared with 0.7 MPa for bulk C60 crystals. In addition, it is shown that the Young's modulus for C60NWs in the solution is 8.9 GPa, that is below a half of 20 GPa for bulk C60 crystals.
  • 川田 博昭, 石原 洵也, 鹿山 昌代, 安田 雅昭, 平井 義彦
    2008 年128 巻8 号 p. 325-330
    発行日: 2008/08/01
    公開日: 2008/08/01
    ジャーナル フリー
    Various Si molds with different side wall roughness were fabricated and the demolding forces for the thermal imprint to PMMA film were examined. The pattern size was the 2 μm half pitch line and space with the aspect ratio of about 2. The demolding force greatly depended on the side wall roughness of the mold. The demolding force normalized by the total side wall area of line patterns was 0.34 MPa for the smooth side wall mold.
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