Hydroxide films were formed on aluminum specimens by immersing them in water at temperature (
Tb) of 100-180°C, and the specimens were then anodized galvanostatically in a neutral borate solution to form composite oxide films. The formation behavior of the hydroxide and composite oxide films were followed by gravimetry, X-ray photoelectron spectroscopy, electron microscopy, and electric capacitance measurements.
It was found that the growth rate of the hydroxide films increased with increasing
Tb, and that the hydroxide/metal interface roughened increasingly due to the non-uniform growth of the hydroxide. The water content of the hydroxide (value of
X in Al
2O
3·
XH
2O) decreased from 2.7 to 1.8 when
Tb increased from 100 to 180°C.
The composite oxide films that formed after boiling at different values of
TbS were all composed of an outer crystalline oxide layer (thickness δ
o) and an inner amorphous oxide layer (thickness δ
i), and while δ
i did not depend on
Tb, δ
o decreased with increasing
Tb. The composite oxide films formed by anodizing to
Ea=300V showed thickness/voltage ratios ((δ
o+δ
i)/
Ea) of only 1.10 to 0.87nm/V, decreasing with increasing
Tb. The capacitance and dielectric loss of the composite oxide films increased with
Tb.
The effect of
Tb on the formation behavior of composite oxide films is discussed by considering the volume changes caused by the field-assisted dehydration of hydroxide to form a barrier oxide layer.
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