A taste sensor with global selectivity is composed of several kinds of lipid/polymer membranes for transforming information of taste substances into electric signal. The sensor output shows different patterns for chemical substances which have different taste qualities such as saltiness and sourness. Taste interactions such as suppression effect, which occurs between bitterness and sweetness, can be detected and quantified using the taste sensor. The taste and also smell of foodstuffs such as beer, coffee, mineral water, soup and milk can be discussed quantitatively. The taste sensor provides the objective scale for the human sensory expression. Multi-modal communication becomes possible using a taste/smell recognition microchip, which produces virtual taste. We are now standing at the beginning of a new age of communication using digitized taste.

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This paper is a review of our recent work on the fabrication of GaAs/AlGaAs, InSb and bismuth micro-Hall probes for scanning Hall probe magnetic imaging at 300K.
Our recent work on the fabrication of GaAs/AlGaAs, InSb and bismuth micro-Hall probes for 300K scanning Hall probe magnetic imaging at was reviewed. We are currently studying ways of increasing the carrier mobility of the polycrysalline bismuth films in order to improve the field sensitivity of the nano-Bi Hall probes.

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The importance and methodology of international standardization were introduced. The present situation of the specific standardization items such as semiconductor pressure sensors, Hall elements, semiconductor accelerometers, micromachine terminology, micromachine material evaluation methods were described.

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High Temperature Coefficient of Resistance (TCR) platinum (Pt) thin films become increasingly attractive for devices with Micro Electro Mechanical Systems (MEMS) using high temperature. However, in annealing with high temperature, Pt thin films are degraded, and in comparison with bulk Pt, the TCR of Pt thin films are inferior. In this study, alumina (Al₂O₃) buffer layers were introduced between the silicon nitride (SiNx) films and Pt films. After annealing in the air, the structure of Pt thin films was observed by Scanning Electron Microscope (SEM) and analyzed by X-ray diffraction, and the depth-resolved elemental composition of interface between Pt thin films and Al₂O₃ buffer layers was observed by Secondary Ion Mass Spectrometry (SIMS). As the annealing temperature is higher, the grain size of Pt is larger. At the point of the largest grain size, the largest TCR could not obtain. In this paper, we discuss about the relationship between the structure of Pt thin film and annealing temperature, and about the effect of Al₂O₃ buffer layers.

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An arrayed atomic force microscope (AFM) cantilevers were fabricated for parallel scanning probe lithography (SPL). n-octadecyltrimethoxysilane (ODS) self-assembled monolayer (SAM) films were patterned to form 100nm-width lines. Parallel SPL was demonstrated with 5 probes and good alignment and homogeneity were obtained. Parallel SPL in addition to photolithography for a single electron device was also performed.

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