WO
3 thin film was evaporated on substrate provided with Pt interdigitated electrodes and with a heater element. The NO
2 and NO sensing properties of the filmprepared by vacuum evaporation with post annealing were measured both in N
2 and in air. With increasing operating temperature, NO
2 sensitivity in N
2 is increased but NO
2 sensitivity in air is decreased. Oxygen gas affects the adsorption-site of NO
2, that is related to oxygen vacancy of WO
3 film, at higher temperature. NO is also adsorbed to WO
3 film with electron-attraction in N
2 only at lower temperature.
Control of oxygen composition of WO
3 film was tried by evaporation under vacuum, oxygen gas and oxygen plasma ambient. NO
x sensitivities of these WO
3 films were measured without post annealing. The film evaporated under oxygen ambient has the highest electrical resistivity and the film evaporated under oxygen plasma has the lowest resistivity. The film evaporated under oxygen plasma ambient, that is expected to have lower density of oxygen vacancy, has low sensitivity for NO
x gas. The film evaporated under oxygen ambient has high sensitivity for NO
x gas.The NO
x sensitivities depend on the injection rate of oxy gen gas. The reason why the WO
3 thin film prepared by oxygen gas-evaporation has high sensitivity for NO
x seems to be related to the nano-crystalization of WO
3.
View full abstract