IEEJ Transactions on Sensors and Micromachines
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
Volume 142, Issue 1
Displaying 1-9 of 9 articles from this issue
Special Issue on “World State-of-the-art Research on Sensors and Micromachines”
Preface
Special Issue Paper
  • Yoshihiro Hasegawa, Hayato Noma, Miyoko Matsushima, Shin Hasegawa, Tsu ...
    2022 Volume 142 Issue 1 Pages 2-7
    Published: January 01, 2022
    Released on J-STAGE: January 01, 2022
    JOURNAL RESTRICTED ACCESS

    A wireless stent flow sensor system was developed to evaluate the changes in breathing characteristics in the airways of experimental animals caused due to drug administration under free movement conditions for drug development. The system was composed of a stent flow sensor, a signal conditioning module, and a PC module. To develop the stent flow sensor, a tube flow sensor and a stent structure were separately fabricated, and they were interlocked at the connection area formed on both elements. The analog sensor outputs were converted into digital outputs with a sampling frequency of 1.0 kHz in a signal conditioning module and transmitted to a PC module through Bluetooth Low Energy 5.0 operated at 2.4 GHz, as the wireless communication. The stent flow sensor and the signal conditioning module were operated using a 165-mAh battery. A simulation experiment was conducted using a plush doll after obtaining calibration curves. A transparent tube was used as the airway and it was placed inside the doll, and an artificial ventilator designed for a small experimental animal was connected to the tube. The stent flow sensor fixed inside the tube was connected to the airway tube, and the signal conditioning module was placed on the back of the neck of the doll. The stent flow sensor output was successfully transmitted to the PC module through Bluetooth. It was demonstrated that the system developed in this study can measure the breathing airflow with a tidal volume accuracy of less than 3.7%.

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  • Norihiro Miyazawa, Haibin Wang, Naoto Usami, Takaya Kubo, Hiroshi Sega ...
    2022 Volume 142 Issue 1 Pages 8-12
    Published: January 01, 2022
    Released on J-STAGE: January 01, 2022
    JOURNAL RESTRICTED ACCESS

    We have realized an infrared (IR) photodiode with silicon for the future beyond-VLSI photonics. Colloidal quantum dot (CQD) integration with Si is a simple process. We previously reported a PbS CQD/ZnO/Si hybrid IR photodiode. The device had an absorption peak at 1230 nm. To improve the quantum efficiency, we investigated the dose levels of Si substrates and improved the external quantum efficiency (EQE) by using a structural approach, such as using a higher doping level of Si. We achieved a 1230 nm absorption peak with an ITO/Au/PbS-EDT/PbS-I CQDs/ZnO/Si hybrid IR photodiode with an EQE close to 7%, at a reverse bias of -0.5 V.

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Special Issue Letter
 
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