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- The Journal of the Institute of Electrical Engineers of Japan
Volume 117, Issue 8
Displaying 1-10 of 10 articles from this issue
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Kazuo Sato1997 Volume 117 Issue 8 Pages 395-398
Published: July 20, 1997
Released on J-STAGE: April 01, 2009
JOURNAL FREE ACCESSDownload PDF (930K) -
Statistical Report on MEMS 10 YearsShuichi Shoji1997 Volume 117 Issue 8 Pages 399-400
Published: July 20, 1997
Released on J-STAGE: April 01, 2009
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Hiroyuki Fujita1997 Volume 117 Issue 8 Pages 401-406
Published: July 20, 1997
Released on J-STAGE: April 01, 2009
JOURNAL FREE ACCESSA history of microelectromechanical system(MEMS) research and development from 1987 is reviewed Major achievements in MEMS research are listed in the time sequence. The achievements include microacuators, microsensors, micro miniature motion-systems (e.g. microrobots), applications and the fabrication technology involved Future prospects of MEMS in contributing the 21th Century society are expected in three areas such as (1) wider distribution of and easier access to information, (2) making human activities more compatible with environment and (3) improvement in social welfare. The technological issues for future development of MEMS are also discussed.View full abstractDownload PDF (1378K) -
Takayuki Yagi, Yasuhiro Shimada, Tsutomu Ikeda, Osamu Takamatsu, Kiyos ...1997 Volume 117 Issue 8 Pages 407-412
Published: July 20, 1997
Released on J-STAGE: April 01, 2009
JOURNAL FREE ACCESSWe present a new method to fabricate sharp metal tips on cantilevers for a SPM. The metal tip, which is deposited and patterned as a film on a silicon mold with pyramidal etch pits, is attached by metal-to-metal bonding to a metal pad on a substrate. Then the tip on the substrate is peeled off the mold at room temperature. The tip surface is very smooth without grain boundaries associated with deposited thin films. A platinum tip with a radius curvature of less than 15nm was successfully fabricated. In addition, the mold can be reused because the mold is not dissolved during the tip fabrication. By applying this method in which the tip fabrication process is independent of the cantilever process, we succeeded to form a tip on a piezoresistive cantilevers. Moreover, we used the cantilever with the tip in a piezoresistive AFM and an AFM/STM apparatus and obtained high resolution topography and surface conductance images, respectively.View full abstractDownload PDF (3428K) -
Shinji Kaneko, Nobuyoshi Asaoka, Hiroshi Tosaka, Ryo Ota, Kazuhisa Yan ...1997 Volume 117 Issue 8 Pages 413-419
Published: July 20, 1997
Released on J-STAGE: April 01, 2009
JOURNAL FREE ACCESSA new monolithic device technology for micromachines has been developed. This device consists of a flexible film and thinned integrated circuits. The fabrication process is compatible with high performance CMOS devices. The flexible film includes high density wires and other electric functions in several micrometers thick. The integrated circuits are thinned by electrochemical etching to less than 20μm thick. This device is useful for integration and size reduction of electric components for micromachines. We have fabricated the monolithic devices and investigated the characteristics.View full abstractDownload PDF (3976K) -
Hideki Takagi, Ryutaro Maeda, Tadatomo Suga1997 Volume 117 Issue 8 Pages 420-425
Published: July 20, 1997
Released on J-STAGE: April 01, 2009
JOURNAL FREE ACCESSWe have developed a new method for the direct bonding of silicon wafers at room temperature. In the method Ar fast atom beam etching is used to modify the surface of the specimens, and they are bonded in the vacuum. With the appropriate Ar beam etching, the bonding prepared at room temperature is as strong as that prepared by conventional wet surface modification treatment and high temperature annealing. In the process, pressing load is not necessary when two specimens are mated. Intimate contact at the bonding interface is supposed to be achieved by the attractive force between the sarface. Crystal orientation of the wafer has very small effect on the bonding. Even between the different crystal faces, the bonding is possible. The applicability of this method to the small area bonding was proved by the bonding of 100μm wide lines. These results demonstrate the advantages of this method. This method is promising as an assembling and packaging method for micro electro mechanical systems.View full abstractDownload PDF (4079K) -
Kohro Takahashi, Sakae Nakajima1997 Volume 117 Issue 8 Pages 426-427
Published: July 20, 1997
Released on J-STAGE: April 01, 2009
JOURNAL FREE ACCESSA high-density full color LED (light emitting diode) display panel was fabricated using LED array units which had many LED chips mounted on a silicon microreflector. The reflector was formed on a (100) silicon wafer by anisotropic chemical etching. The silicon microreflector absorbs the heat generated by the LED chips and improves their light directive characteristics. The three kinds of LEDs (red, green and blue) in a unit are arrayed with a matrix structure and the electric contacts between the LED chips, the reflector and the upper cover glass are formed using conducting silver resin.View full abstractDownload PDF (838K) -
Yasuhiko Shinozawa, Takeshi Abe1997 Volume 117 Issue 8 Pages 428-429
Published: July 20, 1997
Released on J-STAGE: April 01, 2009
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Minoru Kurosawa, Makoto Chiba, Toshiro Higuchi1997 Volume 117 Issue 8 Pages 430-431
Published: July 20, 1997
Released on J-STAGE: April 01, 2009
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Jun AKEDO, Masaaki ICHIKI, Kaoru KIKUCHI, Ryutaro MAEDA1997 Volume 117 Issue 8 Pages 432-433
Published: July 20, 1997
Released on J-STAGE: April 01, 2009
JOURNAL FREE ACCESSDownload PDF (1803K)
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