The effect of gap size on the gas sensitivity of semiconductor gas sensor was evaluated in the NO
2 sensing using WO
3 nanosensor, the Cl
2 sensing using In
2O
3 nanosensor and the H
2S sensing using SnO
2 nanosensor. The nano-gap effect was markedly observed in the NO
2-WO
3 system and the Cl
2-In
2O
3 system (resistance increase), while the H
2S-SnO
2 system showed the weak nano-gap effect. This difference resulted from the ratio (S
i/S
gb) of sensitivity at semiconductor oxide-electrode interface (S
i) to at grain boundary (S
gb). The NO
2-WO
3 and the Cl
2-In
2O
3 systems showed the large S
i/S
gb ratio (32-43), while the small ratio (9.7) was obtained in the H
2S-SnO
2 system at the gas concentration of 0.5-1 ppm. It was found that the clearer nano-gap effect was obtained for the system having the larger S
i/S
gb ratio. In the system having large S
i/S
gb ratio, the nano-design of electrode structure like nano-gap electrode was important for high sensitivity gas sensors.
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