Effect of metal loading on the H
2 sensing properties of semiconductor gas sensors prepared by the SnO
2 powders modified with a mesoporous SnO
2 layer has been investigated. Metal loading on the SnO
2 powder prior to the modification with the mesoporous SnO
2 layer resulted in larger H
2 response than the sensor prepared by loading after the modification. This phenomenon was highlighted in the case of Ru loading, in comparison with Pd, probably due to its moderate catalytic activity. The markedly improved H
2 response was considered to arise from a synergistic effect of the diffusion control by the mesoporous SnO
2 layer and the chemical sensitization by the Ru loaded on the SnO
2 powder surface. The smaller response induced by the Ru loading after the modification with the mesoporous SnO
2 layer was attributed to consumption of H
2 at the surface of the mesoporous SnO
2 layer.
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