We examined the vabrational characteristics of a silicon 3D structure and considered the possibility of their applications. The silicon 3D structure with the cavity between the seismic mass which exists at the center of a chip and the beam which suspends the seismic mass has been realized. By using the 3D structure, the piezoresistive accelerometer was fabricated and it was obtained that the sensitivity for X-axis, Y-axis, and Z-axis component were 0.4-0.5mV/(m/s
2) respectively. We also measured the frequency response of the piezoresistive accelerometer on condition that it was drived by a stacked piezo-electric. Additionally, we detected the angular velocity of the piezoresistive accelerometer and obtained the good agreement to the theory. Finally, we were able to verify the possibility of applying the silicon 3D structure to an angular rate sensor on the basis of experimental results.
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