We have developed a new Si DRIE process, which allows simultaneous etching of both narrow and wide mask opening patterns. MEMS devices often contains a wide range of mask opening sizes from μm to mm on a same chip. Conventional DRIE process suffered from a trade off between minimizing mask-undercut for narrow grooves and eliminating ‘Black Si’ on an etched bottom surface for large mask apertures. This was caused by non-uniformity in deposition of protective polymeric layer during etching among mask aperture areas having different sizes. Our new DRIE process technique alternating the conventional DRIE and O
2 plasma irradiation, adds SiO
2 layer onto polymeric layer. We have clarified that the new DRIE process can form SiO
2 protective layer having uniform thickness regardless of the mask aperture size. This uniformity is considered as a result of equilibrium between surface oxidation and sputtering of oxygen by plasma irradiation. We proved that our developed process allows a simultaneous etching of narrow deep grooves of 1μm width, 73μm deep, and wide aperture area of 500μm square without Black Si on a same chip.
View full abstract