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飯塚 怜, 座古 保, 船津 高志, 養王田 正文
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2004 年31 巻3 号 p.
195-
発行日: 2004/08/25
公開日: 2017/05/31
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We have performed optical observation of the cooperation between the group II chaperon and the prefoldin from the hyperthermophilic archaea and kinetic analyses. Our results clearly demonstrate physical interaction and functional cooperation of them in protein folding.
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荒川 孝俊
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2004 年31 巻3 号 p.
196-
発行日: 2004/08/25
公開日: 2017/05/31
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I report the preliminary X-ray crystallographic studies of 2 molecular chaperone proteins, hop and prefoldin. Both crystals appeared by vapor diffusion technique. While crystals of prefoldin diffracted poorly, those of hop showed 〜2Å resolution diffraction patterns that belong to P4 space group. Phase determination of them is now in progress.
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飯村 好和, 吉崎 泉, 依田 真一, 小松 啓
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2004 年31 巻3 号 p.
197-
発行日: 2004/08/25
公開日: 2017/05/31
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We developed an embedding method for processing protein crystals. This method is specialized in observing the impurity distribution in protein crystals and enables to visualize the fluorescence labeled impurity distribution in protein crystals with high contrast and without optical reflection at edges of crystals.
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飯村 好和, 吉崎 泉, 栄 龍, 足立 聡, 依田 真一, 小松 啓
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2004 年31 巻3 号 p.
198-
発行日: 2004/08/25
公開日: 2017/05/31
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We applied a chemically cross-linked protein crystal to promotion of nucleation. A chemically cross-linked protein crystal was made from a native protein crystal by chemical cross-linking with glutaraldehyde. Promotion of nucleation and homoepitaxy on a chemically cross-linked protein crystal were observed.
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門脇 昭夫, 吉崎 泉, 足立 聡, 小松 啓, 小田 原修, 依田 真一
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2004 年31 巻3 号 p.
199-
発行日: 2004/08/25
公開日: 2017/05/31
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The growth process was investigated in order to clarify the mechanism of improving crystal quality by solution flow. AFM observation revealed that the hillock, consisting of two-dimensional islands, was formed under solution flow. Since high step density at the slope of the hillock caused step-step interaction, the step growth rate under solution flow was slower than that under quiescent condition. It appears that this slowly growth decreased the molecular miss-orientation at the kink site and the crystal quality was improved.
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若山 信子, Dachuan Yin, 木吉 司, 和田 仁, 原田 一明, 藤原 昌雄, 谷本 能文
原稿種別: 本文
2004 年31 巻3 号 p.
200-
発行日: 2004/08/25
公開日: 2017/05/31
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When an upward magnetic force is equal to a gravitational one, microgravity environment can be obtained on the earth. Recently, a convenient type of superconducting can provide microgravity more than two month. For the first time, we grew protein crystals under microgravity on earth where natural convection was damped and found the improvement of crystal quality, compared with those grown outside the magnet.
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佐崎 元, Abel Moreno, 中嶋 一雄
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2004 年31 巻3 号 p.
201-
発行日: 2004/08/25
公開日: 2017/05/31
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We have studied the effects of an internal electric field (direct current) on protein crystallization. In the case of the internal electric field, similar effects to those found in an external field (no current) could be obtained by applying very small voltage and current (1.9mV, 2.0μA). In addition, we found novel coupling effects when the internal electric field and a magnetic field were applied at the same time.
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小泉 晴比古, 清水 美紀, 橘 勝, 小島 謙一
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2004 年31 巻3 号 p.
202-
発行日: 2004/08/25
公開日: 2017/05/31
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Longitudinal and transverse sound velocity of tetragonal hen egg-white (HEW) lysozyme crystals dried at 42% relative humidity (RH) was measured by ultrasonic pulse-echo method. Thus, six elastic constants of the dried tetragonal HEW lysozyme crystals were determined.
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鈴木 良尚, 佐崎 元, 松浦 良樹, 本同 宏成, 櫻庭 春彦, 大島 敏久, 中嶋 一雄, 田村 勝弘
原稿種別: 本文
2004 年31 巻3 号 p.
203-
発行日: 2004/08/25
公開日: 2017/05/31
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Growth rates of (101) face of glucose isomerase crystals kinetically increased with increasing pressure. We have concluded that the increase in the growth rate was due to a decrease in the average step ledge energy of two-dimensional islands on the (101) face.
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磯部 宏晶, 川原 実, 川村 史朗, 吉村 政志, 森 勇介, 佐々木 孝友
原稿種別: 本文
2004 年31 巻3 号 p.
204-
発行日: 2004/08/25
公開日: 2017/05/31
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We examined the growth conditions of AlN crystals using Ca based flux, and investigated the optimum growth temperature and N_2 pressure applied to the Al included metal melt. Black color AlN crystals with the size of about 10μm were obtained.
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石賀 章, Y. Liu, 柴田 智彦, 三宅 秀人, 平松 和政, 田中 光浩
原稿種別: 本文
2004 年31 巻3 号 p.
205-
発行日: 2004/08/25
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Thick AlGaN with high AlN molar fraction and low dislocation density has been grown on the rugged AlN by low-pressure metalorganic vapor phase epitaxy. The density of threading dislocation (TD) in AlGaN layer was 8.8×10^7cm^<-2>, which is two orders of magnitude lower than that of conventional AlGaN. The reduction of TD density is due to lateral growth of AlGaN on the rugged AlN.
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今出 完, 川原 実, 川村 史朗, 吉村 政志, 森 勇介, 佐々木 孝友
原稿種別: 本文
2004 年31 巻3 号 p.
206-
発行日: 2004/08/25
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The growth of GaN crystals using metal Ga as a starting material was performed under high pressure. Hydrogen gas was used as a carrier gas in the growth. The evaporation rate of Ga suggested that Ga compounds was formed in the vapor phase. It is indicated that these compounds are reactant with ammonia to form GaN crystals.
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E.G. Villora, 島村 清史, 青木 和夫, 一ノ瀬 昇
原稿種別: 本文
2004 年31 巻3 号 p.
207-
発行日: 2004/08/25
公開日: 2017/05/31
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Transparent conductive β-Ga_2O_3 single crystals with 30mm in diameter have been grown by the FZ technique. GaN-system epitaxial films have been deposited by the MOCVD technique on cut and polished β-Ga_2O_3 single crystal wafers. Preliminary GaN-system/β-Ga_2O_3 LEDs with vertical current flow emitted blue light.
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山田 祐嗣, 梅田 英和, 森下 昌紀, 川原 実, 川村 史朗, 吉村 政志, 森 勇介, 佐々木 孝友
原稿種別: 本文
2004 年31 巻3 号 p.
208-
発行日: 2004/08/25
公開日: 2017/05/31
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Up to now, GaN single crystal has been grown on MOCVD-GaN substrate with sapphire substrate. However, sapphire substrate introduces stresses on GaN during the growth period. Therefore we removed a sapphire from GaN single crystals which had been grown in the Na flux and tried the homo-epitaxial growth on GaN substrate without sapphire.
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黒内 正仁, 荒木 努, 直井 弘之, 鈴木 彰, 名西 〓之
原稿種別: 本文
2004 年31 巻3 号 p.
209-
発行日: 2004/08/25
公開日: 2017/05/31
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We studied In-rich InGaN films grown on InN templates and on low temperature grown InN (LT-InN) buffer layers by RF-MBE. As compared with In-rich InGaN films grown directly on the LT-InN buffer layers, In-rich InGaN grown on the InN templates showed a dramatic decrease in FWHM of (0002) XRC. Insertion of the InN template was effective in improving the crystalline quality of In-rich InGaN.
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荒木 努, 上野 朝隆, 直井 弘之, 名西 〓之
原稿種別: 本文
2004 年31 巻3 号 p.
210-
発行日: 2004/08/25
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ECR-MBE growth of InN on silica glass by ECR-MBE was studied. The InN grown on silica glass showed c-axis oriented polycrystalline with random α-axis orientation. LT-InN buffer layer improved the surface morphology and c-axis orientation of the poly-InN. (0002) X-ray rocking curve of the poly-InN with a FWHM of about 3.4゜ was obtained.
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A.S. Somintac, 菊池 友, 藤井 範章, 安田 貴憲, 山口 哲, 中村 宣隆, 宮内 勝久, 有屋田 修, 和田 元, 大鉢 ...
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2004 年31 巻3 号 p.
211-
発行日: 2004/08/25
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Hexagonal GaN were grown using rf-MBE under the influence of various nitrogen ion and electron fluxes. Yellow luminescence was suppressed for samples grown at low electron flux. While the presence of the ions in the nitrogen beam degrades the quality of the samples as determined through XRD and PL.
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大鉢 忠, A.S. Somintac, 菊池 友, 藤田 和久, 有屋田 修, 和田 元
原稿種別: 本文
2004 年31 巻3 号 p.
212-
発行日: 2004/08/25
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Importance of nitrogen flux to the growth of cubic GaN was explained from experimental results. Two orifice thicknesses 0.5mm and 2mm were tested. Excitation of radio frequency discharge was successful applying magnetic field to induce cyclotron resonance. Flow rate dependency of intensity of 747nm N atom was measured for the two orifices.
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菊池 友, A.S. Somintac, 藤井 範章, 安田 貴憲, 山口 哲, 中村 宣隆, 宮内 勝久, 有屋田 修, 和田 元, 大鉢 ...
原稿種別: 本文
2004 年31 巻3 号 p.
213-
発行日: 2004/08/25
公開日: 2017/05/31
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Fabrication of 3C-SiC template was optimized and carried out by a novel jet nozzle operating under ultra high vacuum for c-GaN growth in a MBE system. Uniform nitrogen flux and growth under slightly nitrogen rich condition are crucial to improve the uniformity of c-GaN on 3C-SiC/Si(001) in rf-MBE growth.
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森下 昌紀, 山田 祐嗣, 梅田 英和, 川原 実, 川村 史朗, 吉村 政志, 森 勇介, 佐々木 孝友
原稿種別: 本文
2004 年31 巻3 号 p.
214-
発行日: 2004/08/25
公開日: 2017/05/31
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Transparent and large GaN single crystals were easily grown in Li or Ca mixed flux, and its yield was much higher than that in pure Na flux. In this study, we measured the solubility curve of GaN in Li or Ca mixed flux and examined the dependence of nitrogen concentration on the applied pressure.
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川村 史朗, 山田 裕嗣, 梅田 英和, 森下 昌紀, 川原 実, 吉村 政志, 森 勇介, 佐々木 孝友
原稿種別: 本文
2004 年31 巻3 号 p.
215-
発行日: 2004/08/25
公開日: 2017/05/31
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We investigated in the effects of thermal convection on the LPE growth of GaN using Na-based flux system. The thermal convection in the high temperature solution promotes the growth along the lateral direction, which results in the flat surface of LPE-GaN.
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川原 実, 山田 祐嗣, 梅田 英和, 森下 昌紀, 川村 史朗, 吉村 政志, 森 勇介, 佐々木 孝友
原稿種別: 本文
2004 年31 巻3 号 p.
216-
発行日: 2004/08/25
公開日: 2017/05/31
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The effect of thermal convection in a mixed flux on GaN single crystal growth was investigated focusing especially on a heterogeneous nucleation at the gas-liquid interface and on the crucible wall. The number of nucleus in flux was decreased and the grown epitaxial film incrassated under thermal convection.
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水口 将輝, 秋永 広幸
原稿種別: 本文
2004 年31 巻3 号 p.
217-
発行日: 2004/08/25
公開日: 2017/05/31
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Recently half-metallic ferromagnetic materials have attracted great attentions due to the possibility of applications to 'spintronic' devices. In this contribution, an epitaxial growth of zinc-blende type CrAs film which is predicted by theoretical calculations to possess a half-metallic band structure is reported. The CrAs thin film shows a ferromagnetic behavior at room temperature. Fabrication of a superlattice including zinc-blende CrAs and GaAs is also reported.
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南 和幸, 城後 順平, 森 まなみ, 石橋 隆幸, 佐藤 勝昭
原稿種別: 本文
2004 年31 巻3 号 p.
218-
発行日: 2004/08/25
公開日: 2017/05/31
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Novel ternary compound MnGeP_2 thin films have been prepared on and InP(001) substrates by molecular beam epitaxy (MBE) technique. X-ray analysis suggest that the crystal structure of grown film was a tetragonal of lattice constants α=0.569nm and c=1.130nm with the c-axis perpendicular to the InP (001) plane.
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寒川 義裕, 石橋 隆幸, 熊谷 義直, 纐纈 明伯, 佐藤 勝昭
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2004 年31 巻3 号 p.
219-
発行日: 2004/08/25
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CdGeP_2:Mn and ZnGeP_2:Mn semiconductors promise to be a very prominent for the use in spin electronics. However, the growth conditions for these materials during molecular beam epitaxy (MBE) are not known despite its importance for spin electronics purposes. In order to fabricate the epilayers, we investigate the possibility of MBE of these materials using thermodynamic analysis.
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勝野 弘康, 上羽 牧夫, 齋藤 幸夫
原稿種別: 本文
2004 年31 巻3 号 p.
220-
発行日: 2004/08/25
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The two-dimensional elastic lattice model is extended to include edge dislocations and used to study the effect of misfit dislocations in a heteroepitaxial system.
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齋藤 幸夫
原稿種別: 本文
2004 年31 巻3 号 p.
221-
発行日: 2004/08/25
公開日: 2017/05/31
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By means of an elastic lattice Green's function, we studied the strain effect on the heteroepitaxial adsorbate. Steps interact logarithmically with respect to their separation, but the interaction is modified depending on the relative stiffness between the adsorbate and the substrate. The interaction between two 3D islands separated by a distance γ decays as γ^<-3>.
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辻野 貴洋, 上原 拓也
原稿種別: 本文
2004 年31 巻3 号 p.
222-
発行日: 2004/08/25
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Stress distribution in a solidified material is calculated by using the phase field model. The governing equations which include the coupling effects among the phase, temperature and stress are derived based on the thermo-dynamical laws. As the first step, a simple finite element model is applied in order to verify the effect of volumetric change.
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松本 喜以子, 入澤 寿美, 北村 雅夫, 横山 悦郎, 熊谷 義直, 纐纈 明伯
原稿種別: 本文
2004 年31 巻3 号 p.
223-
発行日: 2004/08/25
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We examined the bound energy dependency of the effective distribution coefficient in the ideal solid solution. As a result, we clarified that the relaxation in the terrace greatly influenced the effective distribution coefficient.
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北村 雅夫
原稿種別: 本文
2004 年31 巻3 号 p.
224-
発行日: 2004/08/25
公開日: 2017/05/31
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Compositional change of a solid solution during its growth can be preserved as chemical growth zoning. Such zoning is often used to estimate formation conditions of crystals. Simple models with equilibrium of constant effective distribution coefficients for the growth interface have been applied to predict the growth zoning. However, several examples which can not be explained by such models have been presented. In the present study, the model where the interface kinetics is taken into considerations zoning is applied to predict the growth zoning.
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阿久津 典子, 阿久津 泰弘, 山本 隆夫
原稿種別: 本文
2004 年31 巻3 号 p.
225-
発行日: 2004/08/25
公開日: 2017/05/31
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We have studied the thermal step bunching on the vicinal surface with adsorption statistical mechanically. We have obtained theoretically that, in the case of repulsive short-range interaction among adsorbates, the thermal step bunching occurs around the critical curve of the order-disorder phase transition on the surface which forms the 'terrace' in the vicinal surface. We will mention to the difference between the step bunched vicinal surface and the Herring's hill-and-valley structure.
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松田 圭司, 丸山 隆浩, 成塚 重弥
原稿種別: 本文
2004 年31 巻3 号 p.
226-
発行日: 2004/08/25
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Fabrication of step-free surface is important for realizing nano-size devices because monolayer step on Ge(100) surface induces anti-phase domains of GaAs heteroepitaxial layer. Atomically flat Ge(100) surface with device-size has never been accomplished. In this study, nearly step-free Ge(111) surface was successfully grown on mesa-patterned substrate by controlling the supersaturation of LPE.
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山本 陽, 斎藤 弘智, 近藤 俊行, 方 炯軫, 丸山 隆浩, 成塚 重弥
原稿種別: 本文
2004 年31 巻3 号 p.
227-
発行日: 2004/08/25
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GaAs (001) surfaces were nitrized by using RF-MBE in order to fabricate a NANO-lithography mask. The RMS roughness of the mask has relationship with the formation of the nano particles on the surface concerned with As evaporation and Ga migration.
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角谷 均, 戸田 直大, 佐藤 周一
原稿種別: 本文
2004 年31 巻3 号 p.
228-
発行日: 2004/08/25
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This paper provides the summary of our works concerning the high purity and high crystalline quality synthetic diamond. First, we give an outline of the technique to reduce the impurities, inclusion and crystal defect of the synthetic type IIa diamond grown by the temperature-gradient method. Next, we present some noticeable properties and applications of the high-quality synthetic diamond.
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金子 聰
原稿種別: 本文
2004 年31 巻3 号 p.
229-
発行日: 2004/08/25
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Our studies are reviewed briefly about a-SiC; H growth by plasma enhabced CVD from MTS (methyltrichrolosilane) and MMS (monomethylsilane). These sources include one atom each of silicon and carbon but the film composition can be controlled by plasma power density. Optical emission and adsorption spectroscopy revealed that SiH_2 rate-controlled the deposition process. FTIR of the films indicated the hydrogen content and incorporation scheme of the films.
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墻内 孝祐, 井上 哲夫, 柳谷 伸一郎, 森 篤史
原稿種別: 本文
2004 年31 巻3 号 p.
230-
発行日: 2004/08/25
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PbBr_2 crystals were grown by a vertical Bridgman method. We studied how the crystal quality was influenced by the purification of materials. Further, we examined the dislocation densites in the crystals.
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太子 敏則, 加藤 健太郎, デュラン A., 林 貴之, 藤原 和崇, 深海 龍夫, 干川 圭吾
原稿種別: 本文
2004 年31 巻3 号 p.
231-
発行日: 2004/08/25
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Langasite crystals 1 inch in diameter were grown by vertical Bridgman method under reducing atmosphere without oxygen gas flow. When a growth rate was 1mm/h a transparent and non-colored langasite single crystal without cracks and inclusions could be grown, and it had considerably higher resistivity than the crystal grown by conventional CZ method.
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樋口 幹雄, 小平 紘平, 高橋 順一, 浦田 佳冶, 町田 博, 和田 智之
原稿種別: 本文
2004 年31 巻3 号 p.
232-
発行日: 2004/08/25
公開日: 2017/05/31
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Tm:GdVO_4 single crystals were successfully grown by the floating zone method. All the grown crystals had no cracks and no inclusions for any dopant concentration. Laser oscillation was observed for the 3 at%-doped crystal at 1920nm with the pumping wavelength of 806nm. The slope efficiency was 38% with the threshold of about 400mW.
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勝亦 徹, 相沢 宏明, 清川 結香, 笹川 智美, 西川 貴子, 小室 修二, 森川 滝太郎
原稿種別: 本文
2004 年31 巻3 号 p.
233-
発行日: 2004/08/25
公開日: 2017/05/31
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Rare-earth garnet, Y_3Al_5O_<12>, doped with Cr_2O_3, crystals are found to be useful as a sensor material for a fiber-optic fluorescence thermometer. Temporal characteristics of fluorescence from Cr doped Y_3Al_5O_<12> crystals are quite comparable to that of ruby (Cr doped Al_2O_3) crystal.
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齊藤 武尚, 和田 隆博, 足立 秀明, 神野 伊策
原稿種別: 本文
2004 年31 巻3 号 p.
234-
発行日: 2004/08/25
公開日: 2017/05/31
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KNbO_3, (K_<0.5>Na_<0.5>)NbO_3 and NaNbO_3 thin films were deposited on (100) SrTiO_3(STO) substrate by Pulsed Laser Deposition (PLD). The obtained (K,Na)NbO_3 films were epitaxially grown on (100)SrTiO_3 with an orientation relationship as (K,Na)NbO_3(001)_<pc>‖STO(001) and (K,Na)NbO_3[100]_<pc>‖STO[100]. The smoothness of the film surface is improved with the increase of the Na content.
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木村 秀夫, 宮崎 昭光, 眞岩 幸治, Zhenxiang CHENG, Kannan CHINNA VENKADASAMY
原稿種別: 本文
2004 年31 巻3 号 p.
235-
発行日: 2004/08/25
公開日: 2017/05/31
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Potassium niobate crystals were grown from different composition melt by Pulling down method. Grown crystals were investigated from a viewpoint of non-sthochiometry. Lattice parameter and phase transformation points are changed, so non-stoichiometry is expected.
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久湊 直人, 佐治 隆司, 西岡 志行, 吉村 政志, 森 勇介, 佐々木 孝友
原稿種別: 本文
2004 年31 巻3 号 p.
236-
発行日: 2004/08/25
公開日: 2017/05/31
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We grew nonlinear optical crystal CsB_3O_5 (CBO) by the Top-Seeded Solution Growth technique with the various self-flux solution. It was found that the crystals grown from the starting composition of 68〜70mol% B_2O_3 had fewer light scattering centers, although the crystal growth was relatively difficult in comparison with the growth from 72〜73.3mol%.
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三枝 理哉, 阿部 淳, 溝田 孝夫, 霜村 攻
原稿種別: 本文
2004 年31 巻3 号 p.
237-
発行日: 2004/08/25
公開日: 2017/05/31
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Single crystals of NMU were grown from ethanol solution. Effect of growth conditions on the crystal quality was investigated. Transmission spectrum of grown NMU single crystal exhibited that the absorption edge is about 230nm.
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大場 点
原稿種別: 本文
2004 年31 巻3 号 p.
238-
発行日: 2004/08/25
公開日: 2017/05/31
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In order to improve the UV transmittance and laser durability of the calcium fluoride crystal for excimer laser, it is necessary to reduce impurities in it. To attain that purpose, some refining method which zinc fluoride is used as scavenger has been tried. And it has become clear that the atmosphere at the temperature in which scavenging reaction occurs is very important.
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西永 頌
原稿種別: 本文
2004 年31 巻3 号 p.
239-240
発行日: 2004/08/25
公開日: 2017/05/31
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For the fabrication of micro/nano-structures by crystal growth, it is useful to employ facets to cover the structures. In vapor growth such as MBE, many facets appear during the growth. The final facet, which covers the desired structure, is that has the slowest growth velocity. Inter-surface diffusion, which is defined as surface diffusion between the facets, determines which facet remains during the growth. In this paper, we discuss the origin of the inter-surface diffusion, the way to control and its application for micro/nano-structure fabrication.
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成塚 重弥, 斎藤 弘智, 鈴木 喬, 近藤 俊行, 丸山 隆浩
原稿種別: 本文
2004 年31 巻3 号 p.
241-242
発行日: 2004/08/25
公開日: 2017/05/31
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In order to fabricate GaAs micro-structures, we employed beam induced lateral epitaxy (BILE). The growth behavior of BILE was found to strongly depend both on the shadow effect of the neighboring ridge and on the formation of the facets on the lateral growth front, which even controls the grown shape of the layer itself.
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本久 順一, 福井 孝志
原稿種別: 本文
2004 年31 巻3 号 p.
243-
発行日: 2004/08/25
公開日: 2017/05/31
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We report on the fabrication of periodic structures of InGaAs and InP on InP (111)A- or (111)B-oriented substrates by using selective-area (SA) MOVPE for the application of photonic crystals (PhCs). Array of hexagonal InGaAs and InP pillars are formed on masked substrates with circular mask openings at appropriate growth conditions. Air-hole arrays with InGaAs are also grown on substrates with periodic array of hexagonal masks.
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大河内 俊介, 中村 有水, 中村 均, 浅川 潔
原稿種別: 本文
2004 年31 巻3 号 p.
244-245
発行日: 2004/08/25
公開日: 2017/05/31
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We have demonstrated a new site-control technology to form InAs quantum dots with a specially designed cantilever, referred to as the Nano-Jet Probe. Using this probe, uniform In nano-dot arrays were reproducibly formed on a GaAs MBE grown surface. These In nano-dot arrays were crystallized to InAs QD arrays by subsequent annealing with irradiation of arsenic flux.
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宮本 智之, 松浦 哲也, 太田 征孝, 松井 康尚, 古旗 達也, 小山 二三夫
原稿種別: 本文
2004 年31 巻3 号 p.
246-247
発行日: 2004/08/25
公開日: 2017/05/31
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MBE grown (Ga)InAs quantum dots (QDs) have been investigated using an antimony (Sb). The Sb in dots inhibits the formation of QDs. This phenomenon is understood that the Sb suppresses the 3D growth similar to the case for highly strained GaInAs QWs. On the other hand, the GaInAsSb cover layer elongated the PL wavelength and increased the intensity drastically. The result would be promising for QD lasers on a GaAs substrate for use in long-wavelength.
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高橋 直行
原稿種別: 本文
2004 年31 巻3 号 p.
248-
発行日: 2004/08/25
公開日: 2017/05/31
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Preparation of indium nitride has been examined by means of an atmospheric pressure halide chemical vapor deposition technique utilizing a reaction of gaseous InCl_3 and NH_3. From the SEM observations of the crystals deposited onto a Si(100) substrate it was found that they showed flower-like structure, and that each of the flowers has six petals and a style at 823K. It has high symmetry, and possesses a six-fold axis along the style. It was amazing that the crystals constituting a flower have lovely geometry of staggered hexagonal bi-pyramid.
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