Temperature and illuminance dependence of the electrical capacity of PbS photoconductive film has been obtained experimentally.
An increase of illuminance falling on PbS photoconductive film is accompanied by an increase of capacity of PbS film.
When the illuminance falling on PbS film is constant and the variation of temperature of PbS film is permitted, the capacity of PbS film increases with the rise of temperature.
But non-photosensitive PbS film, not oxidized, shows no variation in the capacity when illuminance increases.
The authors speculate that the cause of illuminance dependence of capacity of PbS photoconductive film is the photovoltage of p-n junction in PbS film.
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