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Volume 124, Issue 5
Displaying 1-4 of 4 articles from this issue
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Paper
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Hideki Satake, Takeshi Yamaguchi2004 Volume 124 Issue 5 Pages 167-171
Published: 2004
Released on J-STAGE: August 01, 2004
JOURNAL FREE ACCESSDielectric breakdown mechanism of Hafnium (Hf) silicate film has been discussed, on the basis of the temperature dependence of the charge-to-breakdown (Qbd). It has been found that the activation energy of Qbd as a function of reciprocal temperature was around 0.1 eV, irrespective of the injection direction of electrons. The activation energy of Qbd for Hf-slicate gate dielectrics is almost same as that for silicon-dioxide (SiO2). Furthermore, it was found that Qbd for Hf-silicate was remarkably small, compared with that for SiO2.
On the basis of the experimental results, the dielectric breakdown model for Hf-slicate dielectrics is proposed in this paper. It is inferred that, in high temperatures, the dominant mechanism for the dielectric breakdown is the hydrogen-related process, irrespective of the material of the gate dielectrics. We consider that a large amount of the defects in Hf-silicate films brings about the relative small life-time, compared with that with SiO2.View full abstractDownload PDF (5332K) -
Sumio Akai, Kouji Goto, Hisakazu Miyajima, Shigenari Takami2004 Volume 124 Issue 5 Pages 172-178
Published: 2004
Released on J-STAGE: August 01, 2004
JOURNAL FREE ACCESSThe performance of MEMS devices are influenced by the structure surrounding MEMS devices strongly because the output of it is small and moreover it is complex and minute structure. For such MEMS devices, low stress packaging is indispensable to high performance and high reliability. We tried to evaluate stress transmitted from the package to the chip and the offset voltage evaluation of piezoresistive pressure sensor by the finite element method. Stress buffer package structure is proposed to a result of the above. Changes of an offset voltage were able to be decreased by alleviating stress from the package to 20% of the rations so far, and it was verified that it could be applied to other piezoresistive devices.View full abstractDownload PDF (5513K) -
Takashi Araki, Daisuke Hasegawa, Tomoyuki Nagase, Makoto Araki, Hisao ...2004 Volume 124 Issue 5 Pages 179-182
Published: 2004
Released on J-STAGE: August 01, 2004
JOURNAL FREE ACCESSIn this paper, we present a new high-precision speedometer for vehicles using a K-band Doppler technology. The concept of our new speedometer is based on the Doppler effects phenomenon to obtain a speed of the vehicle more precisely. The experimental design, data collection and data evaluations are discussed, and the features of the new system have been appraised and compared with a conventional speedometer. The results show that our new speedometer development exhibits a phenomenal performance gains with low cost design, light weight and its performance provides a pragmatic element for emerging ITS infrastructure.View full abstractDownload PDF (2758K) -
Masaaki Yoshitake, Toshikazu Nosaka, Tadaoki Kusaka, Yoshihiko Suzuki, ...2004 Volume 124 Issue 5 Pages 183-189
Published: 2004
Released on J-STAGE: August 01, 2004
JOURNAL FREE ACCESSA pressure sensor for use in a high temperature atmosphere (150˜250°C) has been developed. The pressure sensor consists of Cr-O thin film strain gauges, electrode films and an oxidation resistance film, which are all sputter deposited on a metal diaphragm covered with an SiO2 insulator. For the pressure measurement, a photolithographically patterned Wheatstone bridge circuit of the Cr-O thin film strain gauges was used. The output voltages showed good linearity with pressure and little hysteresis even at a temperature of 250°C. In order to prevent oxidation of the strain gauges at high temperatures, some sputtered oxidation resistance films were examined. It was shown that non-oxide films such as AlN and Si3N4 films have good characteristics to prevent oxidation of the strain gauges.View full abstractDownload PDF (6211K)
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