Taikabutsu
Online ISSN : 2759-3835
Print ISSN : 0039-8993
Volume 40, Issue 3
Taikabutsu Vol.40 No.3 March 1988
Displaying 1-2 of 2 articles from this issue
  • Akira Yamaguchi
    1988Volume 40Issue 3 Pages 132-138
    Published: March 01, 1988
    Released on J-STAGE: July 01, 2024
    JOURNAL FREE ACCESS
    Sulfides such as CaS,K2SO4,etc.are formed in the dolomite refractories used in burning zone of cement kiln.    In this paper,conditions for formation of the compounds such as the sulfides were clarified thermochemically,and atmosphere in the burning zone was estimated in the case of 1700K as follows;    Partial pressure of oxygen was in -6・636>log PO2>8・82. Main gas species were CO2(g),CO(g), H2O(g),SO2(g),H2(g),S2(g)・K2SO4(g),etc.and each partial pressure was obtained.
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  • Kazunori Kijima, Masayuki abe, Toru Uetsuki, Kaichiro Tanaka
    1988Volume 40Issue 3 Pages 139-144
    Published: March 01, 1988
    Released on J-STAGE: July 01, 2024
    JOURNAL FREE ACCESS
      Refractories containning silicon carbide are used in industry as special ceramics and these refractories usually contaln a large amounts of silicates or silicon nitride as a bonding materials in grain boundaries in order to proceed sintering.A new technique is eagerly expected to produce silicon carbide refractories with a high quality.The present paper will describe an application of a thermal plasma technique to sintering problems of silicon carbide.The following parameters are  considered here as a major factors in plasma sintering of silicon carbide:out-put power of radio frequency,gaseous pressure and flow rate of plasma working gas,sintering duration,and additive amounts of boron and carbon.   The experimental results show that an optimum condition existed for each parameters.The reasons of the exist of optimum points will also be discussed.Silicon carbide could be sintered to the theotrtical denslty by a plasma sintering,according to the experimental results obtained here.The data analysis of the present experimental results revealed that an interaction between plasma and a sample is tremendously important as well as plasma temperature (gaseous temperature).
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