To reduce the contact resistance between the silicides and source/drain diffusion regions in scaled MOSFETs, the contact resistivity of barrier height controlled Pt
xHf
1-xSi to heavily doped Si was investigated by the cross-bridge Kelvin resistor method for the first time. Pt
xHf
1-xSi was formed from the in-situ deposited Pt(8-12nm)/Hf(2-8nm)/Si(100) stacked structures followed by the 400°C/60min silicidation in N
2 ambient. The obtained Schottky barrier height (SBH) for electron was 0.53eV in Pt
0.6Hf
0.4Si/n-Si(100), while the SBH for hole in Pt
0.9Hf
0.1Si/p-Si(100) was 0.26eV, respectively. The contact resistivities of 2×10
-7Ωcm
2 for Pt
0.6Hf
0.4Si/n
+-Si(100) and 7.1×10
-8Ωcm
2 for Pt
0.9Hf
0.1Si/p
+-Si(100) were achieved even for the minimum contact area of 4µm
2.
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