In this work, the effects of source and drain resistances (
RS,
RD) on device characteristics are investigated for sub-20nm MOSFETs. The current driving capability is calculated for several structures such as planar bulk, SOI, and Multi gate MOSFETs by using the ITRS data. It is found that the degradation of the drain currents due to
RS and
RD becomes significant as the gate lengths are scale down to sub-20nm region. In order to investigate the effects of
RS and
RD on the device parameters such as the channel length modulation coefficient
λ and the saturation drain current
IDSAT, the drain currents are simulated by using the circuit simulation. The intrinsic MOSFET model parameters were extracted from the experimental
ID-
VD characteristic of 20nm nMOSFET. The source and drain resistances are changed from 0 to 100 ohm. It is found that the degradation of
IDSAT due to
RS and
RD shows the linear gate voltage dependence. For the long channel MOSFET, the degradation of
λ shows the linear gate voltage dependence. On the contrary, for the short channel MOSFET, the degradation of
λ shows the little gate voltage dependence.
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