As the physical dimensions of semiconductor device shrinks, 2-Dimensional carrier profiling techniques are expected to become indispensable for the process technology development, device design, and failure analysis in nano-scale. Nowadays, there are several candidates in the scanning probe microscopy (SPM) related techniques for that purpose. As a new approach to improve spatial resolution and sensitivity, we have developed self-sensing probe, and applied to the scanning capacitance microscopy. This self-sensing probe consists of bulk metal tip, and quartz oscillator as a force sensor. The bulk metal tip of this probe enables higher sensitivity and stability than conventional metal-coated ones, and self-sensing capability keeps from undesirable photocarrier effect. With the use of this probe, 2-dimensional
p-
n junction locus was observed with a spatial resolution better than 5 nm in the dC/dV imaging.
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