IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
E102.C 巻, 1 号
選択された号の論文の14件中1~14を表示しています
Special Section on Recent Progress in Electromagnetic Theory and Its Application
Regular Section
  • Hidenori YUKAWA, Yu USHIJIMA, Motomi ABE, Takeshi OSHIMA, Naofumi YONE ...
    原稿種別: PAPER
    専門分野: Microwaves, Millimeter-Waves
    2019 年 E102.C 巻 1 号 p. 56-63
    発行日: 2019/01/01
    公開日: 2019/01/01
    ジャーナル 認証あり

    We propose a T-junction OMT consisting of an offset stepped post. The offset stepped post contributes to the matching of two rectangular ports at the short circuit, situated at the opposite side walls. The structure without conventional ridges is simple and makes it possible to achieve robust performance. We fabricated a proposed T-junction OMT in a single piece of an aluminum alloy, using a commercial metal 3D-printer. The simple and compact structure with robust performance is proposed to overcome the disadvantages of a 3D-printer, such as fabrication tolerance and surface roughness. The measured results demonstrated a return loss of 22dB and an insertion loss of 0.3dB, with a bandwidth of 8% in the K-band.

  • Yuanyuan XU, Wei LI, Wei WANG, Dan WU, Lai HE, Jintao HU
    原稿種別: PAPER
    専門分野: Electronic Circuits
    2019 年 E102.C 巻 1 号 p. 64-76
    発行日: 2019/01/01
    公開日: 2019/01/01
    ジャーナル 認証あり

    A 19.1-to-20.4 GHz sigma-delta fractional-N frequency synthesizer with two-point modulation (TPM) for frequency modulated continuous wave (FMCW) radar applications is presented. The FMCW synthesizer proposes a digital and voltage controlled oscillator (D/VCO) with large continuous frequency tuning range and small digital controlled oscillator (DCO) gain variation to support TPM. By using TPM technique, it avoids the correlation between loop bandwidth and chirp slope, which is beneficial to fast chirp, phase noise and linearity. The start frequency, bandwidth and slope of the FMCW signal are all reconfigurable independently. The FMCW synthesizer achieves a measured phase noise of -93.32 dBc/Hz at 1MHz offset from a 19.25 GHz carrier and less than 10 µs locking time. The root-mean-square (RMS) frequency error is only 112 kHz with 94 kHz/µs chirp slope, and 761 kHz with a fast slope of 9.725 MHz/µs respectively. Implemented in 65 nm CMOS process, the synthesizer consumes 74.3 mW with output buffer.

  • Alagu DHEERAJ, Rajini VEERARAGHAVALU
    原稿種別: PAPER
    専門分野: Electronic Circuits
    2019 年 E102.C 巻 1 号 p. 77-82
    発行日: 2019/01/01
    公開日: 2019/01/01
    ジャーナル 認証あり

    Forward converter is most suitable for low voltage and high current applications such as LEDs, battery chargers, EHV etc. The active clamp transformer reset technique offers many advantages over conventional single-ended reset techniques, including lower voltage stress on the main switch, the ability to switch at zero voltage and duty cycle operation above 50 percent. Several papers have compared the functional merits of the active clamp over the more extensively used RCD clamp, third winding and resonant reset techniques. This paper discusses about a center clamp technique with one common core reset circuit making it suitable for wide input voltage applications with extended duty cycle.

  • Jinhua DU, Deng YAI, Yuntian XUE, Quanwei LIU
    原稿種別: PAPER
    専門分野: Electromechanical Devices and Components
    2019 年 E102.C 巻 1 号 p. 83-90
    発行日: 2019/01/01
    公開日: 2019/01/01
    ジャーナル 認証あり

    Dual-rotor machine (DRM) is a multiple input and output electromechanical device with two electrical and two mechanical ports which make it an optimal transmission system for hybrid electric vehicles. In attempt to boost its performance and efficiency, this work presents a dual-rotor permanent magnet (DR-PM) machine system used for continuously variable transmission (CVT) in HEVs. The proposed DR-PM machine is analyzed, and modeled in consideration of vehicle driving requirements. Considering energy conversion modes and torque transfer modes, operation conditions of the DR-PM machine system used for CVT are illustrated in detail. Integrated control model of the system is carried out, besides, intelligent speed ratio control strategy is designed by analyzing the dynamic coupling modes upon the integrated models to satisfy the performance requirements, reasonable energy-split between machine and engine, and optimal fuel economy. Experimental results confirm the validity of the mathematical model of the DR-PM machine system in the application of CVT, and the effectiveness of the intelligent speed ratio control strategy.

  • Jaeyong KO, Sangwook NAM
    原稿種別: BRIEF PAPER
    専門分野: Microwaves, Millimeter-Waves
    2019 年 E102.C 巻 1 号 p. 91-94
    発行日: 2019/01/01
    公開日: 2019/01/01
    ジャーナル 認証あり

    A reconfigurable broadband linear power amplifier (PA) for long-range WLAN applications fabricated in a 180nm RF CMOS process is presented here. The proposed reconfigurable in/output matching network provides the PA with broadband capability at the two center frequencies of 0.5GHz and 0.85GHz. The output matching network is realized by a switchable transformer which shows maximum peak passive efficiencies of 65.03% and 73.45% at 0.45GHz and 0.725GHz, respectively. With continuous wave sources, a 1-dB bandwidth (BW1-dB) according to saturated output power is 0.4-1.2GHz, where it shows a minimum output power with a power added efficiency (PAE) of 25.62dBm at 19.65%. Using an adaptive power cell configuration at the common gate transistor, the measured PA under LTE 16-QAM 20MHz (40MHz) signals shows an average output power with a PAE exceeding 20.22 (20.15) dBm with 7.42 (7.35)% at an ACLRE-UTRA of -30dBc, within the BW1-dB.

  • Joonghyun PARK, Myunghun SHIN
    原稿種別: BRIEF PAPER
    専門分野: Semiconductor Materials and Devices
    2019 年 E102.C 巻 1 号 p. 95-98
    発行日: 2019/01/01
    公開日: 2019/01/01
    ジャーナル 認証あり

    Asymmetrically designed polycrystalline silicon (poly-Si) thin film transistors (TFT) were fabricated and investigated to suppress kink effect and to improve electrical reliability. Asymmetric dual channel length poly-Si TFT (ADCL) shows the best reduction of kink and leakage currents. Technology computer-aided design simulation proves that ADCL can induce properly high voltage at floating node of the TFT at high drain-source voltage (VDS), which can mitigate the impact ionization and the degradation of the transconductance of the TFT showing high reliability under the hot carrier stress.

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