Superconducting detectors have been shown to be superior to other techniques in some applications. However, superconducting devices have not been used for detecting neutrons often in the past decades. We have been developing various superconducting neutron detectors. In this paper, we review our attempts to measure neutrons using superconducting stripline detectors with DC bias currents. These include attempts with a MgB₂-based detector and a Nb-based detector with a ¹⁰B converter.

A lumped element kinetic inductance detector (LeKID) relying on a superconducting resonator is a promising candidate for sensing high energy particles such as neutrinos, X-rays, gamma-rays, alpha particles, and the particles found in the dark matter owing to its large-format capability and high sensitivity. To develop a high energy camera, we formulated design rules based on the experimental results from niobium (Nb)-based LeKIDs at 1 K irradiated with alpha-particles of 5.49 MeV. We defined the design rules using the electromagnetic simulations for minimizing the crosstalk. The neighboring pixels were fixed at 150 µm with a frequency separation of 250 MHz from each other to reduce the crosstalk signal as low as the amplifier-limited noise level. We examined the characteristics of the Nb-based resonators, where the signal decay time was controlled in the range of 0.5-50 µs by changing the designed quality factor of the detectors. The amplifier noise was observed to restrict the performance of our device, as expected. We improved the energy resolution by reducing the filling factor of inductor lines. The best energy resolution of 26 for the alpha particle of 5.49 MeV was observed in our device.

Superconducting nanowire single-photon detectors(SSPDs or SNSPDs) can detect single photons in a wide spectrum range from ultraviolet to mid-infrared wavelengths. We developed SSPDs for the light wavelength of 900-1100 nm, where it is difficult to achieve high detection efficiency by either Si or InGaAs avalanche photodiodes. We designed and fabricated the SSPD with non-periodic dielectric multilayers (DMLs) composed of SiO₂ and TiO₂ to enhance the optical absorptance in the wavelength range of 900-1100 nm. We measured the detection efficiency (DE) in the wavelength range of 800-1360 nm using a supercontinuum light source and found that the wavelength dependence of DE was in good agreement with the simulated spectrum of the optical absorptance of the nanowire device on the designed DML. The highest system DE was 81.0% for the wavelength of 980 nm.

This paper presents non-destructive millimeter-wave (MMW) imaging of sub-millimeter-wide cracks on a concrete surface covered with paper. We measured the near-field scattering of 76.5 GHz-MMW signals at concrete surface cracks for detection of the sub-millimeter-wide cracks. A decrease in the received signal magnitude by near-field scattering at the fine concrete surface crack was slight, which yielded an unclear MMW image contrast of fine cracks at the concrete surface. We have found that the received signal magnitude at concrete surface crack is larger than that at the surface without a crack, when the paper thickness is almost equal to n/4 of the effective wavelength of the MMW signal in the paper (n=1, 3, 5 ...), thus, making MMW image contrast at the surface crack reversed. By calculating the difference of two MMW images obtained from different paper thickness, we were able to improve the MMW image contrast at the surface crack by up to 3.3 dB.

A new design approach of broadband RF power amplifier (PA) is introduced in this work with combination of large signal X-parameter and Real-Frequency Technique (RFT). A theoretical analysis of large signal X-parameter is revisited, and a simplification method is introduced to determine the optimum large signal impedances of a Gallium Nitride HEMT (GaN HEMT) device. With the optimum impedance extraction over the wide frequency range (0.3 to 2.0 GHz), a wideband matching network is constructed employing RFT and the final design is implemented with practical mixed-lumped elements. The prototype broadband RF PA demonstrates an output power of 40 dBm. The average drain efficiency of the PA is found to be more than 60%; while exhibiting acceptable flat gain performance (12±0.25 dB) over the frequency band of (0.3-2.0 GHz). The PA designed using the proposed approach yields in small form factor and relatively lower production cost over those of similar PAs designed with the classical methods. It is expected that the newly proposed design method will be utilized to construct power amplifiers for radio communications applications.

A fully integrated 16-phase 8-branch Dickson charge pump is proposed and implemented to decrease the power dissipation due to parasitic capacitance at the bottom plate of the boost capacitor. By using the charge recycling concept, 87% of the power consumption related to parasitic capacitance is saved. In a 4-stage version of this charge pump, a maximum power efficiency of 41% is achieved at 35µA output current and 11V output voltage from a 3.3V supply voltage. The proposed multi-branch charge pump can also reach a very low output voltage ripple of only 0.146% at a load resistance of 1MΩ, which is attributed to the fact that the 8-branch charge pump can transfer charges to the output node eight times consecutively during one clock period. In addition, a high voltage gain of 4.6 is achieved in the 4-stage charge pump at light load conditions. The total chip area is 0.57mm² in a 0.35µm HV CMOS technology.

In this paper, experimental data of non-arcing circuit breaking phenomena in electrical contacts are presented. A dark bridge that is a non-luminous bridge between electrical contacts is an effective factor for the non-arcing circuit break. A facility of a cantilever system was established to precisely control a position of an electrode. By using this facility, dark bridges between contacts were made and the dark bridges were observed by a microscopic camera system.

An electrical capacitance tomography (ECT) method was used to detect fretting wear behavior of electrical connectors. The specimens used in this study were contacts of type-M round two-pin electrical connectors. The experiments consisted of running a series of vibration tests at each frequency combined with one g levels. During each test run, the measured capacitance per pair of electrodes was monitored as a performance characteristic, which is induced by the wear debris generated by the fretting wear of electrical connectors. The fretted surface is examined using scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS) analysis to assess the surface profile, extent of fretting damage and elemental distribution across the contact zone and then compared to the capacitance values. The results exhibit that with the increase of the fretting cycles or the vibration frequency, the characteristic value of the wear debris between the contacts of electrical connector gradually increases and the wear is more serious. Measured capacitance values are consistent with SEM and EDS analysis.

We performed a time dependent percolation analysis of the degradation phenomena in ultra-thin CoFeB/MgO/CoFeB magnetic tunneling junctions. The objective was to understand the microscopic degradation physics of coherent tunneling and the thickness limitation of the MgO barrier. We propose two models: a trap assisted tunneling (TAL) model and a filamentary defect assisted leakage (FAL) model. The correlation between resistance drift behavior and barrier lifetime was then calculated and compared with real data based on these models. The relationship between the resistance drift behavior and barrier lifetime was found to be well explained by the TAL model, the random trap formation in the barrier and the percolation path formation which lead to barrier breakdown. Based on the TAL model, the measured TDDB Weibull slope (β) was smaller than the value estimated by the model. By removing the effect of some initial defects in the barrier, an ultra-thin MgO tunneling barrier in MTJ has the potential for a much better lifetime with a better Weibull slope even at 3ML thickness. This method is rather simple but useful to deeply understand the microscopic degradation physics in dielectric films under TDDB stress.

The neural network has been one of the most useful techniques in the area of speech recognition, language translation and image analysis in recent years. Long Short-Term Memory (LSTM), a popular type of recurrent neural networks (RNNs), has been widely implemented on CPUs and GPUs. However, those software implementations offer a poor parallelism while the existing hardware implementations lack in configurability. In order to make up for this gap, a highly configurable 7.62 GOP/s hardware implementation for LSTM is proposed in this paper. To achieve the goal, the work flow is carefully arranged to make the design compact and high-throughput; the structure is carefully organized to make the design configurable; the data buffering and compression strategy is carefully chosen to lower the bandwidth without increasing the complexity of structure; the data type, logistic sigmoid (σ) function and hyperbolic tangent (tanh) function is carefully optimized to balance the hardware cost and accuracy. This work achieves a performance of 7.62 GOP/s @ 238 MHz on XCZU6EG FPGA, which takes only 3K look-up table (LUT). Compared with the implementation on Intel Xeon E5-2620 CPU @ 2.10GHz, this work achieves about 90× speedup for small networks and 25× speed-up for large ones. The consumption of resources is also much less than that of the state-of-the-art works.

This work reports a new technique to suppress the undesirable multiple-triggering effect in the typical diode triggered silicon controlled rectifier (DTSCR), which is frequently used as an ESD protection element in the advanced CMOS technologies. The technique is featured by inserting additional N-Well areas under the N+ region of intrinsic SCR, which helps to improve the substrate resistance. As a consequence, the delay of intrinsic SCR is reduced as the required triggering current is largely decreased and multiple-triggering related higher trigger voltage is removed. The novel DTSCR structures can alter the stacked diodes to achieve the precise trigger voltage to meet different ESD protection requirements. All explored DTSCR structures are fabricated in a 65-nm CMOS process. Transmission-line-pulsing (TLP) and Very-Fast-Transmission-line-pulsing (VF-TLP) test systems are adopted to confirm the validity of this technique and the test results accord well with our analysis.