IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
E96.C 巻, 2 号
選択された号の論文の26件中1~26を表示しています
Special Section on Recent Progress in Microwave and Millimeter-Wave Photonics Technology
Regular Section
  • Kiyoyuki IHARA
    原稿種別: PAPER
    専門分野: Microwaves, Millimeter-Waves
    2013 年 E96.C 巻 2 号 p. 245-250
    発行日: 2013/02/01
    公開日: 2013/02/01
    ジャーナル 認証あり
    The author developed a wideband precise I/Q modulator using GaAs pHEMT technology. In this technology, pHEMT has 0.22µm metallurgical gate length and ft=51GHz at Vds=5V. With the careful design of the wideband phase shifter, this IQ modulator achieved a large wideband frequency range of 250MHz to 8GHz and good EVM performance after calibration. For overall frequency range, low distortion performance is obtained, where third order intermodulation is less than -42dBc. Also the ACPR at 2.2GHz for W-CDMA application is less than -74dBc.
  • Hsiao-Chin CHEN, Shu-Wei CHANG, Bo-Rong TU
    原稿種別: PAPER
    専門分野: Microwaves, Millimeter-Waves
    2013 年 E96.C 巻 2 号 p. 251-261
    発行日: 2013/02/01
    公開日: 2013/02/01
    ジャーナル 認証あり
    A LNA, an RF front-end and a 6th-order complex BPF for reconfigurable low-IF receivers are demonstrated in this work. Due to the noise cancellation, the two-stage LNA presents a low NF of 2.8 to 3.3dB from 0.8 to 6GHz. Moreover, the LNA delivers two kinds of gain curves with IIP3 of -2.6dBm by employing the capacitive degeneration and the resistive gain-curve shaping in the second stage. The flicker noise corner frequency of the down-converter has been considered and the measured fC of the RF front-end is 200kHz. The RF front-end also provides two kinds of gain curves. For the low-frequency mode, the conversion gain is 28.8∼31.1dB from 800MHz to 2.4GHz. For the high-frequency mode, the conversion gain is 26.8∼27.4dB from 3 to 5GHz. The complex BPF is realized with gm-C LPFs by shifting the low-pass frequency response. With variable transconductances and capacitors, a fixed ratio of the centre frequency to the bandwidth (∼2) is achieved by varying the bandwidth and the centre frequency of the LPF simultaneously. The complex BPF has a variable bandwidth from 200kHz to 6.4MHz while achieving an image rejection of 44dB.
  • Ramesh K. POKHAREL, Prapto NUGROHO, Awinash ANAND, Abhishek TOMAR, Har ...
    原稿種別: PAPER
    専門分野: Microwaves, Millimeter-Waves
    2013 年 E96.C 巻 2 号 p. 262-269
    発行日: 2013/02/01
    公開日: 2013/02/01
    ジャーナル 認証あり
    High phase noise is a common problem in ring oscillators. Continuous conduction of the transistor in an analog tuning method degrades the phase noise of ring oscillators. In this paper, a digital control tuning which completely switches the transistors on and off, and a 1/f noise reduction technique are employed to reduce the phase noise. A 14-bit control signal is employed to obtain a small frequency step and a wide tuning range. Furthermore, multiphase ring oscillator with a sub-feedback loop topology is used to obtain a stable quadrature outputs with even number of stages and to increase the output frequency. The measured DCO has a frequency tuning range from 554MHz to 2.405GHz. The power dissipation is 112mW from 1.8V power supply. The phase noise at 4MHz offset and 2.4GHz center frequency is -134.82dBc/Hz. The FoM is -169.9dBc/Hz which is a 6.3dB improvement over the previous oscillator design.
  • Ramesh K. POKHAREL, Xin LIU, Dayang A.A. MAT, Ruibing DONG, Haruichi K ...
    原稿種別: PAPER
    専門分野: Microwaves, Millimeter-Waves
    2013 年 E96.C 巻 2 号 p. 270-276
    発行日: 2013/02/01
    公開日: 2013/02/01
    ジャーナル 認証あり
    This paper presents the design of a second-order and a fourth-order bandpass filter (BPF) for 60GHz millimeter-wave applications in 0.18µm CMOS technology. The proposed on-chip BPFs employ the folded open loop structure designed on pattern ground shields. The adoption of a folded structure and utilization of multiple transmission zeros in the stopband permit the compact size and high selectivity for the BPF. Moreover, the pattern ground shields obviously slow down the guided waves which enable further reduction in the physical length of the resonator, and this, in turn, results in improvement of the insertion losses. A very good agreement between the electromagnetic (EM) simulations and measurement results has been achieved. As a result, the second-order BPF has the center frequency of 57.5GHz, insertion loss of 2.77dB, bandwidth of 14GHz, return loss less than 27.5dB and chip size of 650µm × 810µm (including bonding pads) while the fourth-order BPF has the center frequency of 57GHz, insertion loss of 3.06dB, bandwidth of 12GHz, return loss less than 30dB with chip size of 905µm × 810µm (including bonding pads).
  • Ji-Hoon LIM, Won-Young JUNG, Yong-Ju KIM, Inchae SONG, Jae-Kyung WEE
    原稿種別: PAPER
    専門分野: Electronic Circuits
    2013 年 E96.C 巻 2 号 p. 277-284
    発行日: 2013/02/01
    公開日: 2013/02/01
    ジャーナル 認証あり
    We suggest a novel digitally-controlled SMPS using a high-resolution DPWM generator. In the proposed circuit, the duty ratio of the DPWM is determined by the voltage slope control of an internal capacitor using a pseudo relaxation-oscillation technique. This new control method has a simpler structure, and consumes less power compared to a conventional digitally-controlled SMPS. Therefore, the proposed circuit is able to operate at a high switching frequency (1MHz∼10MHz) obtained from a relatively low internal operating frequency (10MHz∼100MHz) with a small area. The maximum current of the core circuit is 2.7mA, and the total current of the entire circuit, including the output buffer driver, is 15mA at 10MHz switching frequency. The proposed circuit is designed to supply a maximum 1A with maximum DPWM duty ratio of 90%. The output voltage ripple is 7mV at 3.3V output voltage. To verify the operation of the proposed circuit, we performed a simulation with Dongbu Hitek BCD 0.35µm technology.
  • Hiroyuki OGATA, Kenji ICHIJO, Kenji KONDO, Akito HARA
    原稿種別: BRIEF PAPER
    専門分野: Semiconductor Materials and Devices
    2013 年 E96.C 巻 2 号 p. 285-288
    発行日: 2013/02/01
    公開日: 2013/02/01
    ジャーナル 認証あり
    A multigate polycrystalline-silicon (poly-Si) thin-film transistor (TFT) is a recently popular topic in the field of Si devices. In this study, self-aligned planar metal double-gate poly-Si TFTs consisting of an embedded bottom metal gate, a top metal gate fabricated by a self-alignment process, and a lateral poly-Si film with a grain size greater than 2µm were fabricated on a glass substrate at 550°C. The nominal field-effect mobility of an n-channel TFT is 530cm2/Vs, and its subthreshold slope is 140mV/dec. The performance of the proposed TFTs is superior to that of top-gate TFTs fabricated using equivalent processes.
  • Takahiro SANDA, Yoji SAITO
    原稿種別: BRIEF PAPER
    専門分野: Semiconductor Materials and Devices
    2013 年 E96.C 巻 2 号 p. 289-291
    発行日: 2013/02/01
    公開日: 2013/02/01
    ジャーナル 認証あり
    We have investigated on a random-texturing process for multi-crystalline Si solar cells by plasmaless dry etching, with chlorine trifluoride (ClF3) gas treatments. The reflectance of textured surfaces was reduced to below 20% at a wavelength of 600nm. In this study, we tried to improve the electrical characteristics by modifying the fabrication process. The substrate surfaces were dry etched by chlorine trifluoride gas and subsequently etched with an acid solution to form appropriate textured structures. The improved electrical characteristics were demonstrated.
  • Incheol KIM, Ingeol LEE, Sungho KANG
    原稿種別: BRIEF PAPER
    専門分野: Integrated Electronics
    2013 年 E96.C 巻 2 号 p. 292-294
    発行日: 2013/02/01
    公開日: 2013/02/01
    ジャーナル 認証あり
    This paper proposes a new BIST (Built-In Self-Test) method for static testing of an ADC (Analog-to-Digital Converter) with transition detection method. The proposed BIST uses a triangle-wave as an input test stimulus and calculates the ADC's static parameters. Simulation results show that the proposed BIST can test both rising and falling transitions with minimal hardware overhead.
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