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Volume 20, Issue 12
Displaying 1-10 of 10 articles from this issue
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Jusaku KOMATSU1992 Volume 20 Issue 12 Pages 927-928
Published: December 29, 1992
Released on J-STAGE: March 17, 2010
JOURNAL FREE ACCESSDownload PDF (169K) -
Toshifumi HASAMA1992 Volume 20 Issue 12 Pages 929-947
Published: December 29, 1992
Released on J-STAGE: March 17, 2010
JOURNAL FREE ACCESSA wide-aperture x-ray preionized KrF laser has been studied in detail. The minimum x-ray dose rate needed for perfect saturation of output energy was as low as 1-2mR/100ns. In Ne-buf-fer operation, an output energy of 12.0J in a 40ns (FWHM) optical pulse was extracted with a beam cross-section of 8cm × 10cm. The XeCl laser operation under the same discharge condi-tions produced twice the output energy in twice the optical pulse width. No experimental evi-dence showing remarkable discharge instability in the KrF laser operation has not been found. The low KrF laser output energy was attributed to the high threshold for laser oscillation from the experiment and the discharge simulation. The use of a Ne-He mixture as a buffer gas and a pulse transmission line with high ouput-impedance led to the efficient operation for KrF laser. The maximum output energy and the highest electrical efficiency obtained in the present study were 16.3J and 1.7%, respectively.View full abstractDownload PDF (3050K) -
HaiYou NAN, Kouichi MURAKAMI, Kohzoh MASUDA1992 Volume 20 Issue 12 Pages 948-954
Published: December 29, 1992
Released on J-STAGE: March 17, 2010
JOURNAL FREE ACCESSWe have found recently that there are optimum values of laser irradiation time and spot size for laser Solid Phase Epitaxial (SPE) growth of GaAs. The amorphous GaAs layers with a thick-ness of 600 @/Ar35@/ used in the study were produced by P+ ion implantation. Both 1.7W Ar ion laser and 4W Kr ion laser irradiations were used. The optimum values for SPE of the time and spot diameter were 67ms and 1 μm for the Ar ion laser and 17ms and 10 μm for the Kr laser. The 1 μm spot diameter is the smallest ever reported. For the Kr ion laser irradiation under these conditions, the speed of the laser SPE growth was as high as 30 μm/sec and the tempera-ture was as low as 560°C. The quality of the laser SPE growth layers was evaluated by the peak heights of the LO phonon Raman lines.View full abstractDownload PDF (710K) -
Sin'ichiro FUJIYOSHI, Chikahisa HONDA, Katsunori MURAOKA, Mitsuo MAEDA1992 Volume 20 Issue 12 Pages 955-962
Published: December 29, 1992
Released on J-STAGE: March 17, 2010
JOURNAL FREE ACCESSSalt deposited on the surface of insulators used in electric power systems causes flash-over accidents. Therefore, the quantity of salt on insulators should be monitored not to exceed a cri-tical value. We propose a new remote sensing technique to measure the quantity of salt on in-sulators of power systems. A pulsed laser beam is focused on an insulator to dissociate the salt to sodium atoms. The amount of the salt is measured from the intensity of the spontaneous emis-sion from the sodium atoms. A compact salt-meter was developed with a Nd: YAG laser, and the sensitivity, detection range, required laser fluence, and others were investigated. The signal intensity for a detection range of 10m was measured and compared with the data measured by a conventional conductivity method.View full abstractDownload PDF (977K) -
Yoshizumi YASUOKA, Takahisa OKUDA1992 Volume 20 Issue 12 Pages 963-969
Published: December 29, 1992
Released on J-STAGE: March 17, 2010
JOURNAL FREE ACCESSProperties of point-contact warm carrier devices, when used as harmonic mixers in the CO2 laser frequency region, were investigated. Harmonic mixing experiments were carried out by using the 8.93GHz microwave source and the two CO2 lasers operating at different frequencies. The results showed that the point-contact warm carrier device works as a detector and mixer at CO2 laser frequency as does the W-Ni point-contact MOM diode.View full abstractDownload PDF (776K) -
Masato OHMUKAI, Hiroyoshi NAITO, Masahiro OKUDA, Kou KUROSAWA, Wataru ...1992 Volume 20 Issue 12 Pages 970-979
Published: December 29, 1992
Released on J-STAGE: March 17, 2010
JOURNAL FREE ACCESSThe effects of an argon excimer laser irradiation are studied on silicon carbide films which are deposited on sintered and pressed silicon carbide substrates by a low-pressure chemical vapor deposition (CVD) method. The SiC films consist of about 15μm size crystallites highly oriented in such a way that the surfaces are parallel to (110). X-ray photoelectron and Raman scattering spectroscopic examination show that amorphous silicon is precipitated in the surface layers of silicon carbide films by the laser irradiation. The precipitation mechanism is discussed.View full abstractDownload PDF (1348K) -
Yoji MARUTANI, Takashi NAKAI1992 Volume 20 Issue 12 Pages 980-984
Published: December 29, 1992
Released on J-STAGE: March 17, 2010
JOURNAL FREE ACCESSA new method of designing an optical shutter for laser beams is described. The shutter is composed of a DC servomoter and a secter plate. The rotation angle of the secter is controlled by a photo-interrupter which detects the front and rear edge positions of each blade of the secter plate. The shutter makes a laser beam on and off according to the logic level of the control signal. The response time of the experimental setup is 12.5 ms for a He-Cd laser with a beam diameter of 2 mm. This shutter has very long lifetime and no optical loss for any types of lasers.View full abstractDownload PDF (909K) -
Naoya HAMADA1992 Volume 20 Issue 12 Pages 985-991
Published: December 29, 1992
Released on J-STAGE: March 17, 2010
JOURNAL FREE ACCESSDownload PDF (921K) -
[in Japanese]1992 Volume 20 Issue 12 Pages 992
Published: December 29, 1992
Released on J-STAGE: March 17, 2010
JOURNAL FREE ACCESSDownload PDF (256K) -
1992 Volume 20 Issue 12 Pages i
Published: December 29, 1992
Released on J-STAGE: March 17, 2010
JOURNAL FREE ACCESSDownload PDF (110K)
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